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Manufacturing method of super-thick adapter plate

A production method and technology of adapter boards, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex adapter boards, high input costs and production costs, and the lack of popularization of adapter boards. The effect of less production cost and convenient production

Active Publication Date: 2020-07-10
浙江集迈科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in practical applications, the application of adapter boards has not been widely used, mainly because the process of making adapter boards is too complicated, and the thickness of adapter boards often does not exceed 200um, so a temporary bonding process must be used in the production process. The input cost and production cost are high, which limits the development of the adapter board in the civilian field

Method used

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  • Manufacturing method of super-thick adapter plate
  • Manufacturing method of super-thick adapter plate
  • Manufacturing method of super-thick adapter plate

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specific Embodiment approach 1

[0049] An embodiment of the present invention provides a method for manufacturing an ultra-thick adapter plate, including the following steps:

[0050] A. Fabricate TSV on the surface of the double-layer SOI silicon wafer transfer board, fill the TSV with metal, thin the back of the transfer board, and make a groove on the back of the transfer board;

[0051] Such as Figure 1a As shown, a double-layer SOI silicon wafer 101 is prepared, and TSV103 is fabricated on the surface of the silicon wafer through photolithography and etching processes; the TSV stops on the second layer of SOI104, where the diameter of the TSV is between 1um and 1000um;

[0052] Such as Figure 1b As shown, a passivation layer such as silicon oxide or silicon nitride is deposited on the silicon wafer, or directly thermally oxidized, and the thickness of the passivation layer ranges from 10nm to 100um;

[0053] The seed layer is made on the insulating layer by physical sputtering, magnetron sputtering or evaporati...

specific Embodiment approach 2

[0068] An embodiment of the present invention provides a method for manufacturing an ultra-thick adapter plate, including the following steps:

[0069] A: Fabricate TSV on the surface of single-layer SOI silicon wafer transfer board, fill TSV with metal, thin the back of the transfer board, and make grooves on the back of the transfer board;

[0070] Such as Figure 1g As shown, TSV is fabricated on the surface of a single-layer SOI silicon wafer transfer board;

[0071] Such as Figure 1h As shown, the TSV is filled with metal;

[0072] Such as Figure 1i As shown, thin the back of the adapter plate, and make a groove on the back of the adapter plate;

[0073] B: Electroplating metal in the groove, filling the cavity with colloid, and making RDL and pad on the groove surface;

[0074] Such as Figure 1i As shown, the metal is plated in the groove and the cavity is filled with colloid ( Figure 1k Shown), make RDL and pads on this side;

[0075] C: Cut the adapter board into a single chi...

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Abstract

The invention discloses a manufacturing method of a super-thick adapter plate, which comprises the following steps of: A, manufacturing a TSV on the surface of a double-layer SOI silicon wafer adapterplate, performing metal filling on the TSV, thinning the back surface of the adapter plate, and manufacturing a groove in the back surface of the adapter plate; B, electroplating metal in the groove,performing colloid filling on the cavity, and manufacturing an RDL and a bonding pad on the back surface of the adapter plate; C, performing cavity etching on the TSV surface of the adapter plate tocorrode the TSV in the cavity; D, electroplating metal in the cavity, performing colloid filling on the cavity, and manufacturing an RDL and a bonding pad on the TSV surface of the adapter plate; andE, cutting the adapter plate into single chips to obtain the adapter plate with an up-and-down interconnection structure.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a manufacturing method of an ultra-thick transfer board. Background technique [0002] Microwave and millimeter wave radio frequency integrated circuit technology is the foundation of modern defense weaponry and the Internet industry. With the rapid rise of the "Internet +" economy such as smart communications, smart homes, smart logistics, and smart transportation, microwaves that undertake data access and transmission functions There are also huge actual demands and potential markets for millimeter wave radio frequency integrated circuits. [0003] In the context of the post-Moore's law era, it has become more difficult to improve integration through traditional methods of reducing the size of transistors. The current electronic systems are developing in the direction of miniaturization, diversification, and intelligence, and finally form a highly integrated low-cos...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76898
Inventor 郁发新冯光建王永河马飞程明芳
Owner 浙江集迈科微电子有限公司
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