Novel die bonding material and packaging structure thereof

Abstract

The invention discloses a novel die bonding material and a packaging structure, and the die bonding material comprises a nano metal paste film and a heat dissipation layer, wherein the nano metal paste film uniformly covers at least one of the upper surface and the lower surface of the heat dissipation layer; the heat dissipation layer is of a multi-layer graphene structure, and the nano metal paste film comprises nano metal particles, an antioxidant, soldering flux, a stabilizer and an active agent; the content of the nano metal particles is 50.0 wt.%-95.0 wt.%, the content of the antioxidantis 5.0 wt.%-40.0 wt.%, and the total amount of the scaling powder, the stabilizer and the active agent is less than or equal to 5.0 wt.%. The material has the characteristics of high heat dissipationand uniform thickness; on the premise that the electrical performance of the semiconductor packaging interconnection module is not affected, die bonding and interconnection under the low-temperaturecondition are achieved, the semiconductor packaging interconnection module can be used under the conditions of small spacing, high power, high temperature, high pressure and the like, and the semiconductor packaging interconnection module can be widely applied to the fields of power electronics, IGBT packaging, photoelectron packaging, MEMS packaging, microelectronics, high-power LED packaging andthe like.

Description

technical field [0001] The invention belongs to the technical field of third-generation semiconductor packaging, and in particular relates to a novel crystal-bonding material and a packaging structure thereof. Background technique [0002] Electronic interconnection materials and interconnection substrates are the hubs of semiconductor device manufacturing, microelectronic packaging, and power electronic packaging micro-device module connection components. As representative die-bonding and interconnection substrates in the modern electronics industry, traditional interconnection substrates are mostly used It is made of electroplated copper on the surface of the plate. However, in recent years, microelectronic systems have developed towards high power, high-density integration, miniaturization, and multi-functionalization, and their production costs have been continuously reduced. Higher requirements are imposed, such as realizing high-temperature resistant interconnection (...

AI Technical Summary

Problems solved by technology

However, in recent years, microelectronic systems have developed towards high power, high-density integration, miniaturization, and multi-functionalization, and their production costs have been continuously reduced. Higher requirements are imposed, such as realizing high-temperature resistant interconnection (greater than 200°C) or multi-level packaging requires pre-level interconnection with low-temperature connection and high-temperature resistance characteristics, etc. High interconnection temperature has a great impact on the reliability of microelectronic products. Since the melting point of solid copper is above 1000°C, most component materials will cause thermal failure under this condition. How to realize die bonding and interconnection without affecting the performance of other materials is the key to promoting related research main ideas and directions

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