A preparation method of ultra-smooth nano-sulfur composite hydrogen-containing carbon film
A nano-sulfur and carbon film technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of weakening of mechanical properties of hydrogen-containing carbon film, limiting industrial application, environmental dependence, etc., and achieves reduction Friction coefficient, simple method, high efficiency effect
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Embodiment 1
[0025] (1) Put the cleaned stainless steel substrate into the vacuum chamber and evacuate to 1×10 -3 Pa, filled with argon gas 1Pa, open the magnetic filter Cr metal arc, current bias 200V, time 10 minutes; then open the magnetic filter graphite arc, pulse current 500A, pulse width 500 microseconds, fill in argon and hydrogen (flow ratio 1:1), deposited at a pressure of 1Pa and a bias of 100V for 79 minutes to obtain a carbon film with a hydrogen content of 10%; the thickness is 790nm;
[0026] (2) The hydrogen-containing carbon film was ultrasonically cleaned with ethanol for 10 minutes, and placed in a mixed solution of concentrated sulfuric acid / potassium permanganate (15ml of concentrated sulfuric acid mixed with 1ml of 1mol / L potassium permanganate solution) for 4 hours to make the surface of the carbon film Hydroxylation, after the treatment is completed, rinse with pure water and dry;
[0027] (3) Disperse sulfur powder in ethanol at a ratio of 0.5g / ml, put it into a b...
Embodiment 2
[0031] (1) Put the cleaned stainless steel substrate into the vacuum chamber and evacuate to 1×10 -3 Pa, filled with argon gas at 15Pa, biased at 1000V, bombarded and cleaned for 30 minutes to remove contamination on the surface of the substrate; then introduced a silane gas mixture with a silane concentration of 2.5%, turned off the argon, kept the pressure at 15Pa, biased at 800V, and deposited for 20 minutes ;Refill methane and hydrogen (the pressure ratio of methane and hydrogen is 1:3), close the silane gas mixture, keep other parameters unchanged, deposit for 90 minutes, and obtain a carbon film containing 30% hydrogen, with a thickness of about 850nm;
[0032] (2) The hydrogen-containing carbon film was ultrasonically cleaned with ethanol for 10 minutes, and placed in a concentrated sulfuric acid / potassium permanganate mixed solution (15ml of concentrated sulfuric acid mixed with 1ml of 1mol / L potassium permanganate solution) for 4 hours to make the carbon film Hydroxyl...
Embodiment 3
[0037] (1) Put the cleaned silicon substrate into the vacuum chamber and evacuate to 1×10 -3 Pa, filled with argon gas of 15Pa, biased at 1000V, bombarded and cleaned for 30 minutes to remove pollutants on the surface of the substrate; then injected with 2.5% silane gas mixture, turned off the argon, kept the pressure at 15Pa, biased at 800V, and deposited for 20 minutes; then Fill in the ratio of methane and hydrogen (the flow ratio of methane and hydrogen is 1:2.2), turn off the silane gas mixture, keep other parameters unchanged, deposit for 75 minutes, and obtain a carbon film containing 20% hydrogen, with a thickness of about 850nm;
[0038] (2) The hydrogen-containing carbon film was ultrasonically cleaned with ethanol for 10 minutes, and treated in concentrated sulfuric acid / potassium permanganate (15ml of concentrated sulfuric acid mixed with 1ml of 1mol / L potassium permanganate solution) solution for 4 hours to make the hydroxyl groups on the surface of the carbon fi...
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