Method for constructing in-situ heterostructure based on sulfur-indium-zinc nanosheet and application of in-situ heterostructure

A heterostructure and nanosheet technology, applied in chemical instruments and methods, carbon monoxide, catalysts for physical/chemical processes, etc., can solve the problems of 2D nanosheet heterostructure construction method and insufficient binding force, and achieve good popularization and application value. , the effect of high efficiency and simple process conditions

Active Publication Date: 2020-07-24
FUZHOU UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] Aiming at the problems of 2D nanosheet heterostructure construction method and insufficient binding force, the present invention provides a green synthesis method with simple process and in-situ growth of strong binding force heterojunction on 2D nanosheets

Method used

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  • Method for constructing in-situ heterostructure based on sulfur-indium-zinc nanosheet and application of in-situ heterostructure
  • Method for constructing in-situ heterostructure based on sulfur-indium-zinc nanosheet and application of in-situ heterostructure
  • Method for constructing in-situ heterostructure based on sulfur-indium-zinc nanosheet and application of in-situ heterostructure

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Experimental program
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Effect test

Embodiment 1

[0038] In 2 o 3 @ZnIn 2 S 4 Preparation of heterojunction:

[0039] (1) Weigh 87.8 mg of zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), 234.5 mg of indium chloride tetrahydrate (InCl 3 4H 2 O), 120 mg of thioacetamide (CH 3 CSNH 2 ), added to a mixed solution of 15 mL deionized water and 15 mL absolute ethanol, magnetically stirred for 30 min, and the stirring speed was 1000 rpm to obtain a uniformly dispersed reaction precursor;

[0040] (2) Then the reaction precursor solution was transferred to a 50 mL polytetrafluoroethylene-lined stainless steel autoclave, and reacted at a constant temperature of 180 °C in a dry box for 24 h, and cooled to room temperature with the furnace after the reaction;

[0041] (3) The sample was centrifuged with a centrifuge to obtain a yellow solid powder at a rotational speed of 10,000 rpm; it was washed twice with deionized water and ethanol, and dried overnight at 60 °C in the air until the water was completely evaporated to obtain ...

Embodiment 2

[0045] In(OH) 3 @ZnIn 2 S 4 Preparation of heterojunction:

[0046] (1) Weigh 87.8 mg of zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), 234.5 mg of indium chloride tetrahydrate (InCl 3 4H 2 O), 120 mg of thioacetamide (CH 3 CSNH 2 ), added to a mixed solution of 15 mL deionized water and 15 mL absolute ethanol, magnetically stirred for 30 min, and the stirring speed was 1000 rpm to obtain a uniformly dispersed reaction precursor;

[0047] (2) Then the reaction precursor solution was transferred to a 50 mL polytetrafluoroethylene-lined stainless steel autoclave, and reacted at a constant temperature of 180 °C in a dry box for 24 h, and cooled to room temperature with the furnace after the reaction;

[0048] (3) The sample was centrifuged with a centrifuge to obtain a yellow solid powder at a rotational speed of 10,000 rpm; washed twice with deionized water and ethanol respectively, and dried overnight at 60°C in air until the water was completely evaporated to obtain ...

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Abstract

The invention belongs to the technical field of preparation of nano materials. The invention discloses a method for constructing an in-situ heterostructure based on a sulfur-indium-zinc ZnIn2S4 nanosheet. Zinc acetate dihydrate and indium chloride tetrahydrate are used as raw materials, thioacetamide is used as a sulfur source, deionized water and ethanol are used as solvents, ultrathin and uniform ZnIn2S4 nanosheets are prepared, and heterojunctions In2O3@ZnIn2S4 and In(OH)3@ZnIn2S4 are constructed in situ in an ammonia water solution. The ZnIn2S4 nanosheet in-situ heterojunction prepared byadopting the preparation method disclosed by the invention can be used for effectively inhibiting the compounding of photo-induced electron-hole pairs, and shows excellent performance in photocatalysis of CO2 reduction. The method is simple in preparation process, short in period and low in cost, can be used for large-scale industrial production, and has good economic benefits and environmental benefits.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer materials, in particular to a ZnIn based on sulfur indium zinc 2 S 4 Methods and applications of in situ heterostructure construction of nanosheets. Background technique [0002] Semiconductor photocatalysis technology directly uses solar energy to manufacture high value-added chemicals, such as solar fuels, etc., and has many applications in pollutant degradation, so it has attracted widespread attention. The structure of semiconductor photocatalysts greatly affects their photocatalytic performance, and engineering them into suitable nanostructures is a reliable strategy to enhance catalytic functions. In particular, heterostructures with ultrathin 2D nanosheet bases have several inherent advantages in semiconductor photocatalysis. During the recombination process in different semiconductors forming heterojunctions, the light absorption threshold can be effectively expanded an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C01B32/40
CPCB01J27/04B01J35/004C01B32/40Y02P70/50
Inventor 于岩赵林庄赞勇
Owner FUZHOU UNIV
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