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Method for preparing graphene-based transistor and channel material thereof through electro-deposition

A graphene-based, transistor technology, applied in electrolytic coatings, metal material coating processes, circuits, etc., can solve problems such as difficult repetition, high cost, and difficult operation.

Pending Publication Date: 2020-08-04
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies in the prior art, the present invention provides a method for preparing graphene-based transistor channel materials by electrodeposition, which solves the operational difficulties and difficulties brought about by the wet transfer process of graphene channels in current electrochemical transistors. Duplicate, cost-prohibitive issues

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  • Method for preparing graphene-based transistor and channel material thereof through electro-deposition
  • Method for preparing graphene-based transistor and channel material thereof through electro-deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Electrodeposition prepares the graphene-based transistor channel material and the method for preparing the graphene-based transistor, the steps of which are as follows:

[0026] The first step is to plate gold and chromium on a 1x1cm glass substrate by evaporation coating method. The thickness of chromium is controlled at about 0.3-1nm, and the thickness of gold is controlled at about 30-100nm, which are used as the gate and source of the transistor , Drain, the distance between source and drain is 250μm;

[0027] In the second step, use adhesive tape to fix a size of 5 mm × 5 mm in the channel, disperse graphene oxide in ultrapure water for 1 hour, and then drop-coat it on the fixed channel. The concentration of graphene oxide is 0.5 mg / mL. After drying, the channel region of the transistor is modified with graphene oxide;

[0028] The third step, 1. Use the electrochemical workstation to set the scanning speed of cyclic voltammetry to 50mV / s, and the number of scanni...

Embodiment 2

[0034] Electrodeposition prepares the graphene-based transistor channel material and the method for preparing the graphene-based transistor, the steps of which are as follows:

[0035] The first step is to plate gold and chromium on a 1x1cm glass substrate by evaporation coating method. The thickness of chromium is controlled at about 0.3-1nm, and the thickness of gold is controlled at about 30-100nm, which are used as the gate and source of the transistor , Drain, the distance between source and drain is 100μm;

[0036] In the second step, use adhesive tape to fix the size of 5mm×5mm in the channel, disperse graphene oxide in ultrapure water for 1h, and then drop-coat it on the fixed channel. The concentration of graphene oxide is 0.8mg / mL, and the After drying, the channel region of the transistor is modified with graphene oxide;

[0037] The third step, 1. Use the electrochemical workstation to set the scanning speed of cyclic voltammetry to 50mV / s, and the number of scann...

Embodiment 3

[0041] Electrodeposition prepares the graphene-based transistor channel material and the method for preparing the graphene-based transistor, the steps of which are as follows:

[0042] The first step is to plate gold and chromium on a 1x1cm glass substrate by evaporation coating method. The thickness of chromium is controlled at about 0.3-1nm, and the thickness of gold is controlled at about 30-100nm, which are used as the gate and source of the transistor , Drain, the distance between source and drain is 250μm;

[0043] In the second step, use adhesive tape to fix the size of 5mm×5mm in the channel, disperse graphene oxide in ultrapure water for 1h, and then drop-coat it on the fixed channel. The concentration of graphene oxide is 0.3mg / mL, and the After drying, the channel region of the transistor is modified with graphene oxide;

[0044] The third step, 1. Use the electrochemical workstation to set the scanning speed of cyclic voltammetry to 50mV / s, and the number of scann...

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Abstract

The invention relates to a method for preparing a channel material of a graphene-based transistor through electro-deposition. The graphene-based material is electro-deposited on a source and a drain through cyclic voltammetry to form a channel. Graphene oxide (GO), chloroauric acid (HAuCl4) and graphene oxide (GO), zirconium oxychloride (ZrOCl2) and graphene oxide (GO), and 3, 4-ethylenedioxythiophene (EDOT) and graphene oxide (GO) are electrodeposited to prepare graphene, and the channel material is obtained by compounding metal with graphene, metal oxide with graphene and a polymer with graphene, and a specific U-shaped transfer curve of graphene is obtained.

Description

technical field [0001] The invention relates to a new method for preparing a transistor channel material, specifically using graphene or graphene composite material obtained by electrodeposition on the source and drain electrodes of the transistor as the channel material. Background technique [0002] Graphene has broad application prospects because of its unique physical properties and two-dimensional structure, and transistor sensors are one of them. At present, most of the widely used graphene transistor channel materials are single-layer graphene, which has excellent properties such as zero band gap and high mobility. However, the use cost of single-layer graphene is high, the preparation process is complicated, and the transfer process is complicated. Vulnerable, thus reducing its stability, accuracy and usefulness as a channeling material. [0003] In the prior art CN107907580A and CN108593747A, although the transistor chemical sensor of organophosphorus pesticide and...

Claims

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Application Information

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IPC IPC(8): H01L29/10H01L21/04C23C14/16C23C14/18C23C14/24C25D7/12C25D15/00
CPCH01L29/1033H01L21/0405C23C14/18C23C14/16C23C14/24C25D15/00C25D7/12
Inventor 常钢陶甜马明宇范佳楠何云斌
Owner HUBEI UNIV
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