Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon carbide polishing solution and application thereof

A technology of silicon carbide and polishing liquid, applied in polishing compositions containing abrasives, etc., can solve the problem of low polishing efficiency, and achieve the effects of improving polishing efficiency, high cutting rate, and easy long-term storage

Active Publication Date: 2020-08-11
宁波日晟新材料有限公司
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such as the use of free abrasive CMP polishing (coarse polishing + fine polishing), fixed abrasive polishing pad (FAP) technology, semi-consolidated abrasive polishing technology, etc., but these ultra-precision polishing technologies are based on aqueous solutions. The reaction activation energy, coordination performance, and oxidation-reduction potential of each component in the liquid are all constrained by the aqueous solution. At the same time, the chemical contribution of the polishing liquid in ultra-precision machining is limited, and there is a problem of low polishing efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide polishing solution and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] In the present invention, there is no special limitation on the preparation method of the silicon carbide polishing liquid, which can be prepared by the preparation method of the composition well known to those skilled in the art.

[0033] The present invention also provides the application of the silicon carbide polishing liquid described in the above technical solution, wherein the silicon carbide polishing liquid is used in combination with a polishing pad material for polishing silicon-containing and silicon-containing compounds.

[0034] In the present invention, the Shore hardness of the polishing pad material is preferably greater than 80A, more preferably greater than 90, most preferably greater than 95, and the compression ratio is preferably less than 10%, more preferably less than 5%, most preferably less than 3%.

[0035] In the present invention, the material of the polishing pad is preferably foamed polyurethane, more preferably foamed polyurethane containi...

Embodiment 1

[0038] This embodiment provides a silicon carbide polishing liquid, in which ethylene glycol, diamond (particle size: 1.0 μm), chlorous acid and nitric acid are uniformly mixed to obtain a silicon carbide polishing liquid. Wherein the molar concentration of chlorous acid in the silicon carbide polishing liquid is 0.15 mol / L, the pH value of the silicon carbide polishing liquid is 4, and the mass fraction of diamond is 0.15%.

Embodiment 2

[0047] This embodiment provides a silicon carbide polishing liquid, which is uniformly mixed with isopropanol, aluminum oxide (with a particle size of 50 nm), chlorous acid and potassium hydroxide to obtain a silicon carbide polishing liquid. Wherein the molar concentration of potassium permanganate in the silicon carbide polishing liquid is 3mol / L, the pH value of the silicon carbide polishing liquid is 10, and the mass fraction of diamond is 0.35%. The polishing efficiency of the silicon carbide polishing liquid obtained in this embodiment is 17.2 μm / h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Shore hardnessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a silicon carbide polishing solution and application thereof, belonging to the field of silicon carbide polishing solutions. The silicon carbide polishing solution in the invention uses a non-aqueous solvent for replacing water, so the problem that the characteristics of reaction activation energy, coordination performance, oxidation-reduction potential and the like of eachcomponent in the polishing solution are limited by an aqueous solution is avoided; the silicon carbide polishing solution provided by the invention has good diamond suspension property, can improve polishing efficiency, has no volatility problem, is easy to store for a long time, and is an ideal polishing solution with sub-nanoscale finish degree for manufacturing of semiconductor compound wafers.

Description

technical field [0001] The invention relates to the technical field of silicon carbide polishing liquid, in particular to a silicon carbide polishing liquid and its application. Background technique [0002] The third-generation semiconductor materials, such as SiC, are all high-temperature ceramic materials, which have two notable characteristics: high hardness (Mohs hardness 9.2) and chemical inertness. The hardness of SiC material is high, and the friction removal efficiency of ordinary hardness abrasive grains on SiC is low; and the sharp corners of abrasive grains are easily passivated by hard SiC, the polishing efficiency decays rapidly with time, and the process stability is poor. Diamond abrasive grains have high frictional removal efficiency, but they seriously damage the surface of SiC, and the surface quality of the product cannot meet the stringent requirements for the surface quality of electronic device production. SiC is extremely chemically inert, and its re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 胡静泉刘和欣
Owner 宁波日晟新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com