Preparation process of front oxide layer of novel crystalline silicon PERC battery

Abstract

The invention relates to the field of crystalline silicon PERC battery passivation. The invention discloses a preparation process of a front oxide layer of a novel crystalline silicon PERC battery. The preparation process is carried out according to the technological processes of cleaning and texturing, diffusion and junction making, back etching, double-sided aluminum oxide preparation, front silicon nitride film preparation, back silicon nitride film preparation, back laser grooving and front and back electrode preparation. In the preparation process of the double-sided aluminum oxide, a silicon wafer is inserted into an aluminum flower basket, TMA and water vapor are circularly introduced, and a layer of aluminum oxide film of 3-5 nm is prepared on each of the front surface and the backsurface of the silicon wafer; in the preparation process of the front silicon nitride film, the prepared silicon wafer with the double-sided aluminum oxide is put into a graphite boat, silicon nitride is prepared in tubular PECVD, NH3 and N2 gas is introduced, then a radio frequency source is connected, the front aluminum oxide film layer is knocked off through high-energy plasma, and meanwhile asilicon oxide layer is formed.

Description

technical field [0001] The invention relates to the field of passivation of crystalline silicon PERC cells. Background technique [0002] Currently, silicon oxide passivation technology is used to passivate the front surface of PERC cells, and aluminum oxide is used as the basic passivation film on the back surface. In the specific preparation process, the front silicon oxide layer is realized by thermal oxidation, and the back aluminum oxide There are ALD and PECVD methods for deposition, and the preparation of the two is carried out independently, the equipment cost is high, and in the thermal oxidation process of the pre-silicon oxide layer, the high temperature causes serious thermal damage to the silicon substrate. Contents of the invention [0003] The technical problem to be solved by the present invention is: how to avoid thermal damage to the silicon substrate caused by the high temperature process without using a thermal oxidation process in the preparation proce...

AI Technical Summary

Problems solved by technology

[0002] Currently, silicon oxide passivation technology is used for the passivation of the front surface of PERC cells, and aluminum oxide is used as the basic passivation film on the back surface. There are ALD and PECVD methods for deposition, the preparation of the two is carried out independently, the equipment cost is high, and in the process of thermal oxidation of the pre-silicon oxide layer, the high temperature causes serious thermal damage to the silicon substrate