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Method for growing single-layer silicon phosphide crystal

A silicon phosphide, single-layer technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems such as difficulties in the preparation of two-dimensional silicon phosphide crystals, and achieve favorable support effects

Inactive Publication Date: 2020-08-25
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem of difficult preparation of two-dimensional silicon phosphide crystals, the object of the present invention is to provide a method for growing single-layer silicon phosphide crystals, which can be achieved in one step by improving the traditional chemical vapor transport (CVT) method for growing crystals. Preparation of monolayer silicon phosphide crystals

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  • Method for growing single-layer silicon phosphide crystal
  • Method for growing single-layer silicon phosphide crystal
  • Method for growing single-layer silicon phosphide crystal

Examples

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Effect test

Embodiment 1

[0027] A method for growing single-layer silicon phosphide crystals, comprising the steps of:

[0028] 1) prepare the quartz tube, the length of the quartz tube is 30cm, and the inner diameter is 11mm. Put raw materials and transport agent in the end, vacuumize the quartz tube, seal the quartz tube after vacuuming, so that the pressure inside the quartz tube is 2*10 - 4 Pa, wherein, in parts by mass, the ratio of the raw material to the transport agent is 1:1. The raw material is a mixture of elemental silicon and red phosphorus, the mass of the raw material is 2 mg, the ratio of elemental silicon and red phosphorus is 1:1 in parts by mass, and the transport agent is elemental iodine;

[0029] 2) Use a tube furnace to heat the raw material end and the base end of the quartz tube at the same time for 36 hours. After heating, cool down to room temperature 20-25°C with the furnace to obtain a single-layer silicon phosphide crystal on the substrate. The heating temperature of th...

Embodiment 2

[0031] A method for growing single-layer silicon phosphide crystals, comprising the steps of:

[0032] 1) prepare the quartz tube, the length of the quartz tube is 30cm, and the inner diameter is 11mm. Put raw materials and transport agent in the end, vacuumize the quartz tube, seal the quartz tube after vacuuming, so that the pressure inside the quartz tube is 2*10 - 4 Pa, wherein, in parts by mass, the ratio of the raw material to the transport agent is 1:1. The raw material is a mixture of elemental silicon and red phosphorus, the mass of the raw material is 6 mg, the ratio of elemental silicon and red phosphorus is 1:1 in parts by mass, and the transport agent is elemental iodine;

[0033] 2) Use a tube furnace to heat the raw material end and the base end of the quartz tube at the same time for 10 hours. After heating, cool down to room temperature 20-25°C with the furnace to obtain a single-layer silicon phosphide crystal on the substrate. The heating temperature of th...

Embodiment 3

[0035] A method for growing single-layer silicon phosphide crystals, comprising the steps of:

[0036] 1) prepare the quartz tube, the length of the quartz tube is 30cm, and the inner diameter is 11mm. Put raw materials and transport agent in the end, vacuumize the quartz tube, seal the quartz tube after vacuuming, so that the pressure inside the quartz tube is 2*10 - 4 Pa, wherein, in parts by mass, the ratio of the raw material to the transport agent is 1:1. The raw material is a mixture of elemental silicon and red phosphorus, the mass of the raw material is 2 mg, the ratio of elemental silicon and red phosphorus is 1:1 in parts by mass, and the transport agent is elemental iodine;

[0037] 2) Use a tube furnace to heat the raw material end and the base end of the quartz tube at the same time for 15 hours, and then cool down to room temperature 20-25°C with the furnace after heating to obtain a single-layer silicon phosphide crystal on the substrate, wherein the heating t...

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Abstract

The invention discloses a method for growing a single-layer silicon phosphide crystal. The method comprises the following steps: a quartz tube is prepared, the two ends of the quartz tube are respectively a raw material end and a substrate end, a substrate is placed in the substrate end of the quartz tube, a raw material and a transport agent are placed in the raw material end of the quartz tube,the quartz tube is vacuumized, the quartz tube is sealed after vacuumizing, the raw material is a mixture of elemental silicon and red phosphorus, and the transport agent is elemental iodine; the rawmaterial end and the substrate end of the quartz tube are heated for 5-36 h at the same time, the quartz tube is cooled to the room temperature of 20-25 DEG C along with the furnace after being heated, single-layer silicon phosphide crystals are obtained on the substrate, the heating temperature of the raw material end ranges from 1000 DEG C to 1150 DEG C, and the heating temperature of the substrate end ranges from 600 DEG C to 950 DEG C. According to the method, the growth of the single-layer silicon phosphide two-dimensional crystal is realized for the first time by utilizing a chemical vapor transport method so that the method is a great breakthrough for growing the single-layer SiP two-dimensional crystal, and a favorable support is provided for generating a two-dimensional crystal material by utilizing the chemical vapor transport method.

Description

technical field [0001] The invention belongs to the technical field of single-layer silicon phosphide crystal preparation, and specifically relates to a method for growing a single-layer silicon phosphide crystal. Background technique [0002] Currently known two-dimensional materials have their own advantages and disadvantages. For example, although graphene has high thermal conductivity and high carrier mobility, the "zero band gap" of graphene makes it impossible to realize the logic switch of semiconductors, which greatly limits Molybdenum disulfide is a typical transition metal chalcogenide two-dimensional semiconductor compound, and its single layer has a direct band gap of 1.8eV, so molybdenum disulfide will not be constrained by "zero band gap". Its current switch ratio is as high as 10 8 , but the room temperature carrier mobility of this material is only 200 cm 2 v -1 the s -1 , the low mobility limits its application in the semiconductor field. It can be seen...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/10C30B29/64
CPCC30B25/00C30B29/10C30B29/64
Inventor 邱海龙武羽胡章贵
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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