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Low-resistivity niobium pentoxide hot-pressed target material and preparation method thereof

A technology of niobium pentoxide and niobium pentoxide powder, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as nodules, affecting film performance, poor conductivity, etc. To achieve the effect of improving conductivity and reducing resistivity

Inactive Publication Date: 2020-09-01
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing niobium pentoxide target is mainly obtained by hot pressing of niobium pentoxide powder in vacuum. 2 Semiconductor, but the target material prepared by this method has high resistivity and poor conductivity, and it is easy to generate nodules during use, which affects the performance of the film

Method used

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Examples

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Effect test

preparation example Construction

[0019] The invention provides a method for preparing a low-resistivity niobium pentoxide hot-press target, comprising the following steps:

[0020] After mixing niobium pentoxide powder and niobium powder, vacuum pre-sintering is carried out to obtain niobium oxide containing niobium monoxide;

[0021] The niobium oxide containing niobium monoxide is ball-milled and then hot-pressed and sintered to obtain a hot-pressed target material of niobium pentoxide with low resistivity.

[0022] The invention mixes the niobium pentoxide powder and the niobium powder, and performs vacuum pre-sintering to obtain the niobium oxide containing niobium monoxide.

[0023] In the present invention, the mass ratio of the niobium pentoxide powder to the niobium powder is preferably 100:1-5, more preferably 100:3-4. In the present invention, if the proportion of niobium powder is too small, the resistivity of the obtained niobium pentoxide target material will be too high, and if the content is t...

Embodiment 1

[0036] Niobium pentoxide powder (300 mesh, purity 99.95%) and niobium powder (325 mesh, purity 99.95%) were mixed according to the ratio of 100:4 by mass, passed through 35 mesh, 60 mesh, 80 mesh, 100 mesh and The 120-mesh mechanical vibrating screen is sieved, and then the resulting mixture is mixed with a V-type mixer for 5 hours, wherein the filling amount of the mixture is not more than 2 / 3 of the V-type mixer, and the rotating speed is 22rpm to obtain a well-mixed mixture. material; put the uniformly mixed mixture into a graphite crucible, compact it, then use a quartz rod with a diameter of 2mm to insert small holes at a distance of 3cm on the compacted mixture, and then place it in a vacuum furnace , evacuate to an absolute pressure below 0.1Pa, raise the temperature to 1270°C at a rate of 3°C / min, keep the temperature for 5 hours, and cool to room temperature with the furnace to obtain niobium oxide containing niobium monoxide;

[0037]The oxide of niobium containing n...

Embodiment 2

[0039] Niobium pentoxide powder (300 mesh, purity 99.95%) and niobium powder (325 mesh, purity 99.95%) are mixed according to the ratio of 100:3.5 according to mass ratio, pass through 35 mesh, 60 mesh, 80 mesh, 100 mesh and The 120-mesh mechanical vibrating screen is sieved, and then the resulting mixture is mixed with a V-type mixer for 6 hours, wherein the filling amount of the mixture is not more than 2 / 3 of the V-type mixer, and the speed is 20rpm to obtain a well-mixed mixture. material; put the uniformly mixed mixture into a graphite crucible, compact it, then use a quartz rod with a diameter of 2mm to insert small holes at a distance of 2.5cm on the compacted mixture, and then place it in a vacuum furnace In the process, vacuumize to an absolute pressure below 0.1Pa, raise the temperature to 1300°C at a rate of 3°C / min, keep the temperature for 4 hours, and cool to room temperature with the furnace to obtain niobium oxide containing niobium monoxide;

[0040] The niobi...

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Abstract

The invention provides a low-resistivity niobium pentoxide hot-pressed target material and a preparation method thereof, and belongs to the technical field of coating materials. Vacuum presintering iscarried out on a mixture of niobium pentoxide powder and niobium powder, part of niobium pentoxide reacts with niobium to generate niobium monoxide and niobium dioxide, meanwhile, niobium pentoxide generates niobium dioxide in a vacuum oxygen loss state, niobium oxide containing niobium monoxide is obtained, and then hot-pressed sintering is carried out to obtain the niobium pentoxide hot-pressedtarget material with high density. The niobium pentoxide hot-pressed target material contains a niobium monoxide conductor and a niobium dioxide semiconductor, so that the resistivity of the target material is effectively reduced, and the conductivity is improved.

Description

technical field [0001] The invention relates to the technical field of coating materials, in particular to a low-resistivity niobium pentoxide hot-pressing target material and a preparation method thereof. Background technique [0002] Niobium pentoxide hot-pressing target is widely used in optical sputtering coating, and its good optical performance is widely used in the front cover glass and back cover glass of mobile phones and tablet computers. The front cover glass is coated with niobium pentoxide as an additive The transparent film is used to increase the permeability of the product. The back cover glass is coated with niobium pentoxide to adjust the color of the glass, and the colored back cover is coated with different colors. [0003] The existing niobium pentoxide target is mainly obtained by hot pressing of niobium pentoxide powder in vacuum. 2 Semiconductor, but the target material prepared by this method has high resistivity and poor conductivity, and it is eas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622C04B35/626C04B35/64C23C14/34C23C14/08
CPCC04B35/495C04B35/622C04B35/6265C04B35/62675C04B35/6268C04B35/64C23C14/3414C23C14/083C04B2235/404C04B2235/6562C04B2235/6567C04B2235/77C04B2235/96
Inventor 张瑜林志河
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
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