Silicon substrate nitride multi-quantum well homogeneously integrated electro-optical modulator and preparation method thereof
An electro-optic modulator and multi-quantum well technology, which is applied in optics, instruments, circuits, etc., can solve the problems of low electro-optic modulation efficiency and leakage, and achieve the effects of improving high optical field constraints, improving efficiency, reducing optical loss and light leakage
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[0031] see figure 1 with figure 2 , the present embodiment provides an electro-optic modulator for the homogeneous integration of silicon substrate nitride multi-quantum wells, using a nitride wafer with a multi-quantum well structure as a carrier, including a silicon substrate layer (1), including a multi-quantum well ( 8) the top nitride epitaxial layer and the single-wavelength light source (10), electro-optic modulator (11) and photodetection module (12) arranged in the top nitride epitaxial layer; the two ends of the electro-optic modulator (11) pass through The planar waveguide (13) is connected to the single-wavelength light source (10) and the photodetection module (12), the substrate layer (1) below the electro-optic modulator (11) is hollowed out, and the top nitride epitaxial layer is thinned to form a suspended nitride film; a Bragg reflector (9) is arranged under the suspended nitride film. Using III-V material ICP etching inductively coupled plasma etching tec...
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