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LED multi-quantum well layer growth method for improving crystal quality

A multi-quantum well layer and growth method technology, applied in the field of LED multi-quantum well layer growth for improving crystal quality, can solve the problem of low crystal quality, and achieve the effects of improving luminous efficiency, reducing wavelength drift, and improving crystal quality

Active Publication Date: 2020-09-04
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention solves the problem of low crystal quality existing in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED , reduce operating voltage, reduce wavelength drift

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  • LED multi-quantum well layer growth method for improving crystal quality
  • LED multi-quantum well layer growth method for improving crystal quality
  • LED multi-quantum well layer growth method for improving crystal quality

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Embodiment 1

[0039] This embodiment adopts the LED multi-quantum well layer growth method for improving crystal quality provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0040] A method for growing LED multi-quantum well layers for improving crystal quality, comprising: processing a sapphire substrate 1, growing a low-temperature GaN buffer layer 2, growing a non-doped GaN la...

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Abstract

The invention discloses an LED multi-quantum well layer growth method for improving crystal quality. The method comprises the following steps in sequence: processing a substrate, growing a low-temperature GaN buffer layer, growing a non-doped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic barrier layer and growing a Mg-doped P-type GaN layer, and performing cooling, wherein the growth of the multi-quantum well layer sequentially comprises the steps of growing a Si3N4 layer, growing a SixAl (1-x) N layer, growing an InGaN well layer, growing a Mg gradient doped InAlN layer and growing a GaN barrier layer. The method solves the problem of low quality of quantum well crystals in the existing LED epitaxial growth method, so thatthe luminous efficiency of the LED is improved, the working voltage is reduced, and the wavelength drift is reduced.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED multi-quantum well layer growth method for improving crystal quality. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When current flows, electrons and holes recombine in their quantum wells to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] In the current traditional LED epitaxial InGaN / GaN multi-quantum well layer growth method, the crystal quality in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/06H01L33/007H01L33/145H01L33/325
Inventor 徐平谢鹏杰刘康
Owner XIANGNENG HUALEI OPTOELECTRONICS