Preparation method of perovskite quantum dots and perovskite quantum dots

A quantum dot and perovskite technology, applied in the field of display, can solve the problems of limited practical application, decrease of fluorescence quantum efficiency, high surface defect state density, etc., to increase free carrier concentration, improve efficiency and stability, passivation The effect of surface defects

Active Publication Date: 2020-09-11
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large specific surface area of ​​the quantum dots, the surface defect state density is very high, resulting in a decrease in fluorescence quantum efficiency and a decrease in stability.
Affects and limits practical applications, which is a situation that needs to be avoided as much as possible

Method used

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  • Preparation method of perovskite quantum dots and perovskite quantum dots

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specific Embodiment

[0043] Embodiments of the present invention provide a method for preparing perovskite quantum dots, comprising the following steps:

[0044] A) Stir the mixture of lead halide-based precursor, cesium-based precursor and metal salt containing gallium ions to form gallium ion-doped perovskite quantum dots, wherein the doping of gallium ions in the perovskite quantum dots The impurity ratio is less than or equal to 5%.

[0045] In the process of preparing perovskite quantum dots, metal salts containing gallium ions (such as gallium nitrate, gallium chloride, gallium bromide, gallium iodide, etc.) Precursor reaction, the preparation of perovskite quantum dots (CsPbCl 3 / CsPbCl x Br 3-x / CsPbBr 3 / CsPbBr x I 3-x / CsPbI 3 ), the N-type doping brought by trivalent metal gallium ions can increase the free carrier concentration of perovskite quantum dots and passivate the defects on the perovskite surface, thereby improving the fluorescence quantum of the corresponding perovskit...

Embodiment 1

[0086] In this embodiment, perovskite quantum dots are prepared by hot injection method, as follows:

[0087] Preparation of cesium oleate precursor: add 0.1mol or A mol cesium carbonate to 15ml or more of octadecene, vacuumize, heat up to 100-120°C, discharge oxygen and water vapor, add 1.2ml or more of oil Acid, until the solution is completely free of bubbles, it takes about one hour, then stop vacuuming, protect with nitrogen, and then heat up to 150°C-160°C, preferably 150°C or 160°C, to form cesium oleate precursor, oleic acid The cesium precursor concentration is less than or equal to 1mol / L, heated and stirred at constant temperature.

[0088] Preparation of lead halide precursor containing gallium ions: add 0.1mmol or B mmol lead halide, C mmol gallium nitrate or corresponding gallium halide to octadecene greater than or equal to 5ml, where B=0.1-0.3, C / B =5%-80%, then vacuumize, heat up to 100-120°C, discharge oxygen and water vapor, inject oleic acid greater than o...

Embodiment 2

[0091] In this embodiment, the perovskite quantum dots are prepared by the ligand exchange method, as follows:

[0092] Prepare the precursor: disperse cesium halide and lead halide in equal molar ratios in DMSO or DMF solution, then add gallium nitrate or the corresponding gallium halide in a certain molar ratio (the molar ratio of gallium nitrate or the corresponding gallium halide to lead halide is 5%—80%), form a clear liquid, stir evenly. Wherein, by controlling the molar ratio of gallium nitrate or the corresponding gallium halide to lead halide, the gallium ion doping ratio of the final perovskite quantum dot can be less than or equal to 5%.

[0093] Final reaction: quickly inject the aforementioned precursor solution into the toluene solution or the mixed solution of toluene and n-hexane / n-heptane / n-octane under vigorous stirring (the volume ratio of the precursor solution to toluene or the mixed solution is greater than or equal to 10) , centrifuge and precipitate, r...

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Abstract

The invention discloses a preparation method of perovskite quantum dots and the perovskite quantum dots, and relates to the technical field of display. The preparation method comprises the following steps of: mixing metal salt containing gallium ions, a lead halide-based precursor and a cesium-based precursor, and stirring to form gallium ion-doped perovskite quantum dots, wherein the doping ratioof gallium ions in the perovskite quantum dots is less than or equal to 5%; and through doping of high-valence metal gallium ions, the free carrier concentration in the perovskite quantum dots can beimproved, and the surface defects can be passivated, so that the fluorescence quantum efficiency and stability are improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a preparation method of perovskite quantum dots and perovskite quantum dots. Background technique [0002] All-inorganic perovskite quantum dots CsPbCl 3 / CsPbCl x Br 3-x / CsPbBr 3 / CsPbBr x I 3-x / CsPbI 3 With high stability and fluorescence quantum efficiency, it has broad application prospects in future displays. However, because the quantum dot has a large specific surface area, the surface defect state density is very high, resulting in a decrease in fluorescence quantum efficiency and a decrease in stability. It affects and limits the practical application, which is a situation that needs to be avoided as much as possible. Contents of the invention [0003] The purpose of the present invention is to provide a method for preparing perovskite quantum dots and perovskite quantum dots, which can improve the fluorescence quantum efficiency and stability of the corresp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/66B82Y20/00B82Y40/00C01D17/00
CPCC09K11/665B82Y20/00B82Y40/00C01D17/003
Inventor 王建太龚政陈志涛郭婵潘章旭龚岩芬刘久澄
Owner GUANGDONG INST OF SEMICON IND TECH
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