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Preparation method increasing the light-emitting core size of indium phosphide quantum dots

An indium quantum and indium phosphide technology, which is applied in the field of preparation of core-shell structure quantum dots, can solve the problems of reducing and decreasing the probability of carrier radiation recombination, and achieves a product suitable for popularization and use, with uniform size distribution and avoiding being easily oxidized. Effect

Active Publication Date: 2020-09-22
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the reported quantum yield of InP-related core-shell quantum dots has been as high as 70%, due to its small particle size, usually less than 6nm, under the influence of non-radiative energy transfer, the quantum yield of quantum dots after film formation A sharp drop, resulting in a reduction in the radiative recombination probability of carriers injected into the quantum dot light-emitting layer, which is one of the main factors affecting the efficiency of InP-based light-emitting diodes

Method used

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  • Preparation method increasing the light-emitting core size of indium phosphide quantum dots
  • Preparation method increasing the light-emitting core size of indium phosphide quantum dots
  • Preparation method increasing the light-emitting core size of indium phosphide quantum dots

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Embodiment 1

[0027] In the present embodiment, a kind of preparation method of indium phosphide (InP) quantum dot, the steps are as follows:

[0028] 1) Preparation of raw materials:

[0029] Prepare a uniform indium precursor solution, and prepare a phosphorus precursor solution for future use. The steps are as follows:

[0030] 1-1) Preparation of selenium-trioctylphosphine (Se-TOP):

[0031] Under a nitrogen environment, the elemental selenium and trioctylphosphine were mixed and dissolved to obtain a Se-TOP solution with a concentration of 2M for subsequent use;

[0032] 1-2) Add 0.15mmol of indium acetate, 0.45mmol of hexadecanic acid and 10ml of octadecene into a three-necked flask, blow in nitrogen and heat to 120°C for 1h to remove water and oxygen to form a uniform indium precursor Body solution, spare;

[0033] 1-3) Prepare a phosphorus precursor solution with 0.1 mmol of tris(trimethylsilyl)phosphine as a phosphorus source, and set aside;

[0034] 2) Preparation of indium ph...

Embodiment 2

[0041] This embodiment is basically the same as Embodiment 1, especially in that:

[0042] In this embodiment, a preparation method for increasing the size of the indium phosphide quantum dot luminescent core, the steps are as follows:

[0043] 1) This step is the same as Embodiment 1;

[0044] 2) Preparation of indium phosphide nanocrystalline nuclei at low temperature:

[0045] Cool down to the first temperature of 50°C, and at the first temperature, add 0.1 mmol of tris(trimethylsilyl) prepared in step 1) to the indium precursor solution prepared in step 1) 80% of the phosphine, first make nano-clusters grow in the stock solution; then, at the second temperature of 60°C, continue to slowly add the remaining 0.1mmol required for the synthesis of the outer shell to the indium phosphide nanocrystal core product solution 20% of tris(trimethylsilyl) phosphine is incubated for 30 minutes to form an indium phosphide nanocrystal nucleus, thereby obtaining an indium phosphide nano...

Embodiment 3

[0050] This embodiment is basically the same as Embodiment 1, especially in that:

[0051] In this embodiment, a preparation method for increasing the size of the indium phosphide quantum dot luminescent core, the steps are as follows:

[0052] 1) This step is the same as Embodiment 1;

[0053] 2) Preparation of indium phosphide nanocrystalline nuclei at low temperature:

[0054] Cool down to the first temperature of 50°C, and at the first temperature, add 0.1 mmol of tris(trimethylsilyl) prepared in step 1) to the indium precursor solution prepared in step 1) 60% of the phosphine, first make the nano-clusters grow in the stock solution; then, at the second temperature of 60°C, continue to slowly add the remaining 0.1mmol required for the synthesis of the outer shell to the indium phosphide nanocrystal core product solution 40% of three (trimethylsilyl) phosphine, heat preservation 30min, form indium phosphide nano crystal nucleus, thereby obtain indium phosphide nano crysta...

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Abstract

The invention discloses a preparation method increasing the light-emitting core size of indium phosphide quantum dots. The preparation method comprises the following steps: firstly, preparing a uniform indium precursor solution and preparing a phosphorus precursor in a corresponding proportion; then adding part of tris(trimethylsilyl) phosphine into the indium precursor solution at a first temperature; in a heating process, when the temperature reaches a second temperature, adding the remaining tris(trimethylsilyl) phosphine; and then adding a precursor substance required for synthesizing a shell layer and adjusting to a third temperature to form indium phosphide quantum dots coated with the shell layer. According to the method, a phosphorus source is added in proportion so that the core size of the quantum dots can be effectively increased on the premise that the molar ratio of In to P is not changed, so that the luminous efficiency of the quantum dots is remarkably improved, the sizedistribution is more uniform, the luminous efficiency of the quantum dots is remarkably improved, and the InP quantum dots have very important significance for use and development of the InP quantumdots.

Description

technical field [0001] The invention relates to a method for preparing quantum dots, in particular to a method for preparing quantum dots with a core-shell structure, which is applied in the technical field of semiconductor material preparation technology. Background technique [0002] Indium phosphide (InP) quantum dots, as a new type of semiconductor nanomaterial, have low toxicity (does not contain toxic heavy metal elements such as lead and cadmium), and have optical properties comparable to cadmium-based materials, such as good monochromaticity, band Adjustable gap, high stability and quantum yield. Although the reported quantum yield of InP-related core-shell quantum dots has been as high as 70%, due to its small particle size, usually less than 6nm, under the influence of non-radiative energy transfer, the quantum yield of quantum dots after film formation The sharp drop leads to a reduction in the radiative recombination probability of carriers injected into the qua...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y40/00
CPCC09K11/02C09K11/70C09K11/88B82Y20/00B82Y40/00
Inventor 杨绪勇孙中将曹璠王胜
Owner SHANGHAI UNIV
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