Film bulk acoustic resonator and preparation method thereof

A thin-film bulk acoustic wave and thin-film acoustic wave technology, which is applied in the field of thin-film bulk acoustic resonators and its preparation, can solve the problems of complex structure, instability, and low quality factor of production process of thin-film bulk acoustic resonators, and achieve reduced parasitic effects and smooth ripples , Optimize the effect of the parallel resonance point

Pending Publication Date: 2020-09-22
广州市艾佛光通科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the deficiencies of the prior art, one of the objectives of the present invention is to provide a thin film acoustic resonator, which can solve the problems of complex structure and instability of the thin film bulk acoustic resonator in the prior art.
[0007] The second object of the present invention is to provide a method for preparing a thin film bulk acoustic resonator, which can solve the problem of low quality factor in the production process of thin film bulk acoustic resonators in the prior art

Method used

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  • Film bulk acoustic resonator and preparation method thereof
  • Film bulk acoustic resonator and preparation method thereof
  • Film bulk acoustic resonator and preparation method thereof

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Embodiment 1

[0038] The present invention provides a preferred embodiment, a thin film bulk acoustic resonator, which has a simple and stable structure, and at the same time, the damage to the core components of the thin film bulk acoustic resonator is small during the manufacturing process, and the introduction of parasitic capacitance can be avoided , the quality factor of the thin film bulk acoustic resonator is greatly improved, and the manufacturing cost of the thin film bulk acoustic wave resonator is reduced at the same time.

[0039] Such as figure 1 As shown, a thin film bulk acoustic resonator includes a transfer substrate 101 , a bonding layer 102 , a filling layer 103 , a bottom electrode 104 , a piezoelectric film 105 and a top electrode 200 distributed sequentially from bottom to top.

[0040] Wherein, the top electrode 200 is located above the piezoelectric film 105 , and the bottom electrode 104 is located below the piezoelectric film 105 . In this way, a sandwich structur...

Embodiment 2

[0062] Based on Embodiment 1, the present invention also provides a method for preparing a thin film acoustic wave resonator, which specifically includes the following steps:

[0063] In step S1, a single crystal silicon wafer is selected as an epitaxial substrate, and a piezoelectric thin film is grown on the epitaxial substrate.

[0064] Preferably, growing a layer of piezoelectric film on the epitaxial substrate can use physical vapor deposition (PVD, PhysicalVapor Deposition), metal organic chemical vapor deposition (MOCVD, metal organic chemical vapordeposition) and pulsed laser deposition (PLD, Pulsed Laser Deposition) and any one or more methods to grow a piezoelectric thin film on the epitaxial substrate.

[0065] Step S2, growing a bottom electrode on the first surface of the piezoelectric film, and obtaining the shape of the bottom electrode by etching.

[0066] Preferably, magnetron sputtering is used to form the bottom electrode on the first surface of the piezoel...

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Abstract

The invention discloses a film bulk acoustic resonator, which comprises a transfer substrate, a bonding layer, a filling layer, a bottom electrode, a piezoelectric film and a top electrode which are sequentially distributed from bottom to top, a sandwich structure is formed by the piezoelectric film, a bottom electrode and a first layer of the top electrode, and a groove is formed in the transfersubstrate, so that an air cavity is formed among the bottom electrode, the bonding layer and the transfer substrate; and bulk sound waves generated by the piezoelectric film can be totally reflected on the surface of the bottom electrode through the air cavity, so that the bulk sound waves are limited between the first layer of the top electrode and the bottom electrode, and the resonator functionis achieved. And meanwhile, the top electrode second layer and the top electrode third layer are arranged on the top electrode first layer and are respectively used for optimizing a series resonancepoint and a parallel resonance point of the thin film acoustic wave resonator, so that the parasitic effect is eliminated, and the quality factor is improved. The invention also discloses a preparation method of the film bulk acoustic resonator.

Description

technical field [0001] The invention relates to an acoustic wave resonator, in particular to a film bulk acoustic wave resonator and a preparation method. Background technique [0002] With the development of modern wireless communication technology towards high frequency and high speed, higher requirements are imposed on front-end filters commonly used in radio frequency communication. While the operating frequency continues to increase, there are higher requirements for device volume, performance, stability and integration. The surface acoustic wave filter (Surface Acoustic Wave, SAW) used in the past is due to its large size and process compatibility. Problems such as the working frequency band, etc., have been unable to meet the needs of high-frequency communication. [0003] The Film Bulk Acoustic Resonator (FBAR) is a new type of filter. Compared with the surface acoustic filter, it not only has the characteristics of small size, large power capacity, inheritance, and...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/17H03H9/25H03H9/64
CPCH03H3/02H03H9/17H03H9/25H03H9/64
Inventor 李国强
Owner 广州市艾佛光通科技有限公司
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