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The preparation method of ito thin film and ito transparent conductive glass

A technology of transparent conductive glass and thin film, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, conductive layers on insulating carriers, vacuum evaporation plating, etc. Affects the electron mobility and optical properties of the film, and the difficulty of controlling the thickness of the nano-scale film, etc., to achieve the effect of excellent transparent conductivity, easy large-scale production, and uniform components

Active Publication Date: 2022-01-18
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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Problems solved by technology

[0004] Chinese patent application CN2018111147506 discloses a method for preparing (004) preferentially oriented ITO films by the sol-gel method. Although the (004) preferentially oriented is obtained, it involves many processes such as compounding, homogenizing, drying, and annealing. The surface of the film is rough and uneven, and the thickness of the nanometer film is difficult to control
[0005] Chinese patent application CN2016111663657 discloses a method for preparing an ITO thin film with a preferential orientation of the 004 main peak crystal plane height. By controlling the gradient of the oxygen partial pressure during the growth process, the oxygen partial pressure in the cavity is reduced while the film is continuously growing, and the (004) preference is obtained. ITO film, but reducing the oxygen partial pressure will inevitably increase the concentration of oxygen vacancies, resulting in a decrease in the electron mean free path and optical band gap, affecting the electron mobility and optical properties of the film

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  • The preparation method of ito thin film and ito transparent conductive glass
  • The preparation method of ito thin film and ito transparent conductive glass
  • The preparation method of ito thin film and ito transparent conductive glass

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preparation example Construction

[0038] The present invention proposes a kind of preparation method of ITO film, and it comprises the steps:

[0039] S1: substrate cleaning;

[0040] S2: growing a variable temperature buffer layer on the substrate by magnetron sputtering;

[0041] S3: using magnetron sputtering to grow an oriented growth layer on the temperature-variable buffer layer;

[0042] S4: After the oriented growth layer reaches the set thickness, the growth is stopped; the temperature-variable growth layer and the oriented growth layer together form an ITO thin film.

[0043] In some embodiments of the present invention, in S2, the growth process of the temperature-variable buffer layer is as follows: the initial temperature of the substrate is controlled to 80-120° C., and magnetron sputtering is started to grow the buffer layer. When the buffer layer is deposited every 1 nm , increasing the temperature of the substrate by 0.8-1.2° C. until the thickness of the buffer layer reaches a set thickness...

Embodiment 1

[0054] A preparation method of ITO transparent conductive glass, the specific implementation steps are as follows.

[0055] S1: The substrate is made of alkali-free ultra-thin glass, the content of alkali elements in the alkali-free ultra-thin glass is 0.05 wt%, and the thermal expansion coefficient at room temperature is 35.5×10 -7 / K, thickness 0.4 mm, the substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 10 minutes, and then dried with high-purity nitrogen.

[0056] S2: Magnetron sputtering is used to grow the variable temperature buffer layer. When magnetron sputtering, the sputtering power density is 1.6 W / cm 2 , the sputtering pressure is 0.2 Pa, and the oxygen partial pressure is 0.1%. At the beginning of sputtering, the substrate temperature is 100°C. After that, the substrate temperature is increased by 1°C every time the buffer layer is deposited 1 nm, until the buffer layer When the thickness is 50nm, the growth is stopped an...

Embodiment 2

[0061] A preparation method of ITO transparent conductive glass, the specific implementation steps are as follows.

[0062] S1: The substrate is made of alkali-free ultra-thin glass, the alkali element content in the alkali-free ultra-thin glass is 0.04 wt%, and the thermal expansion coefficient at room temperature is 34.4×10 -7 / K, thickness 0.2 mm, the substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 10 minutes, and then dried with high-purity argon.

[0063] S2: Magnetron sputtering is used to grow the variable temperature buffer layer. When magnetron sputtering, the sputtering power density is 2.4W / cm 2 , the sputtering pressure is 1.0 Pa, and the oxygen partial pressure is 0.4%. At the beginning of sputtering, the substrate temperature is 80°C. After that, the substrate temperature is increased by 0.8°C every time the buffer layer is deposited 1 nm, until the buffer layer When the thickness is 20nm, the growth is stopped and a 20n...

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Abstract

The invention relates to a method for preparing an ITO thin film, which comprises the following steps: S1: cleaning the substrate; S2: growing a temperature-variable buffer layer by magnetron sputtering on the substrate; S3: adopting magnetron sputtering on the temperature-variable buffer layer Growing the oriented growth layer; S4: After the oriented growth layer reaches the set thickness, the growth is stopped; the variable temperature growth layer and the oriented growth layer together form an ITO thin film. Compared with the existing technology, the preparation method of the ITO thin film and ITO transparent conductive glass does not need to introduce a heterogeneous induction layer, and has the advantages of simple and easy control and easy large-scale production. , will not cause changes in the stoichiometric ratio, especially the concentration of oxygen vacancies, the composition of the ITO film is uniform, and the transparent conductive performance of the ITO transparent conductive glass is excellent.

Description

technical field [0001] The invention relates to the field of functional thin film materials and devices, in particular to a preparation method of an ITO thin film and an ITO transparent conductive glass. Background technique [0002] Bandgap Width of Wide Bandgap Transparent Conductive ITO Films at Room Temperature E g Between 3.5-4.3 eV, it has the advantages of high visible light transmittance, high carrier concentration and mobility, high infrared emissivity and other photoelectric transport properties, and has high hardness, and the amorphous film is easy to etch into electrode patterns And other advantages, are widely used in high mobility thin film transistors, color filters, touch screens, photovoltaics, energy-saving glass and other fields. With the continuous refinement of application scenarios, further improving the transparent conductive properties of ITO films and reducing manufacturing costs have always been the focus of research and development of related ind...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
CPCH01B13/0026C23C14/35C23C14/08H01B5/14
Inventor 宋世金朱刘任丽
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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