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Monocrystal film of transparent electro-conductive oxide with structure of perovskite

A perovskite structure, transparent and conductive technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of application limitations and high resistivity of antimony-doped strontium titanate transparent conductive single crystal thin films , to achieve the effect of excellent transparent conductivity

Inactive Publication Date: 2009-11-04
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

Because this film has a perovskite-like single crystal structure and transparent conductivity, it is of great significance for the research of fully transparent thin film devices; but the light wavelength range of Sb:STO single crystal film with high optical transmittance is only 490nm-770nm, its resistivity is relatively large, changing in the range of 2Ωcm-10Ωcm; these shortcomings make the application of antimony-doped strontium titanate transparent conductive single crystal thin film is greatly restricted

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  • Monocrystal film of transparent electro-conductive oxide with structure of perovskite
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  • Monocrystal film of transparent electro-conductive oxide with structure of perovskite

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Embodiment 1

[0020] In this embodiment, lanthanum-doped strontium stannate (La x Sr 1-x SnO 3 , 0≤x≤0.15) transparent conductive oxide single crystal thin film.

[0021] 1. Preparation of La by standard solid-state sintering method x Sr 1-x SnO 3 Target material:

[0022] strontium titanate SrCO 3 (purity ≥ 99.0%), lanthanum oxide La 2 o 3 (purity ≥ 99.99%), tin dioxide SnO 2 (purity ≥ 99.5%) powder according to La x Sr 1-x SnO 3 In the chemical formula, x = 0, 0.03, 0.05, 0.07, 0.10, 0.15 for proportioning, followed by repeated grinding and calcining in the air atmosphere at 1100-1200°C and 1200-1300°C respectively, and pressed into a circular shape under a pressure of 40MPa The chip target is calcined at 1350-1500°C in an air atmosphere until it is sintered into La x Sr 1-x SnO 3 Polycrystalline target material.

[0023] 2. Find and grow La by pulsed laser deposition (PLD) system x Sr 1-x SnO 3 Optimum conditions for a series of single crystal epitaxial films:

[0024] ...

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Abstract

The present invention has a transparent conductive oxide single crystal film with a perovskite structure and its preparation method, which is characterized in that it adopts laser pulse deposition coating, and epitaxially grows on a single crystal substrate strontium titanate SrTiO3 (STO (001)) to obtain a cubic perovskite. Lanthanum strontium tin oxide single crystal film with single crystal structure; the elements in the film are configured according to the molar ratio of the chemical formula LaxSr1-xSnO3 (0≤x≤0.15); with the change of doping concentration x, the unit cell parameters are 4.03-4.07 ; The light transmittance of LaxSr1-xSnO3 / STO is consistent with that of STO substrate within the modulation range of ±2% in the range of light wavelength 400nm-2000nm; La0.07Sr0.93SnO3 with the best conductivity among LaxSr1-xSnO3 series films The resistivity of the film shows an approximately stable value from 4.0 to 4.7mΩcm in the temperature range of 10K-320K.

Description

Technical field: [0001] The invention belongs to the technical field of transparent conductive oxide single crystal thin films, and in particular relates to a transparent conductive oxide single crystal film with a perovskite structure and a preparation method thereof. Background technique: [0002] According to the report of "Solid State Physics (a)" (Phys.Stat.sol.(a), 71(1), 1982, 13-41) in the United States, tin-doped indium oxide In 2 o 3 :Sn(ITO), antimony doped tin dioxide Sb:SnO 2 (ATO) and aluminum-doped zinc oxide ZnO:Al(AZO) and other transparent conductive oxide films that are widely used in industrial production can obtain high light transmittance and high conductivity in the visible light range, but because these substances have polycrystalline Or amorphous structure, making it impossible for them to grow mutually with other single crystal thin films, thus limiting the application of these transparent conductive films in thin film devices. [0003] American ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/22
Inventor 王海峰吴文彬
Owner UNIV OF SCI & TECH OF CHINA
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