Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-layer transparent conductive film for dimming glass and preparation method thereof

A technology of transparent conductive film and three-layer structure, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, coating, etc., can solve the problems of improving and unfavorable transparent conductive properties of films, and achieve light transmission High efficiency, good transparent conductivity, excellent mechanical properties

Inactive Publication Date: 2019-11-22
HUBEI SHALLPHA TECH CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the refinement of metal grains is not conducive to the improvement of the transparent and conductive properties of the film.
In short, there are still some deficiencies in the precise control of the thickness of metal layers such as Ag and Cu by existing methods, and the control of grain size and surface roughness.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:

[0034] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.

[0035] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in an argon atmosphere, under the conditions of sputtering pressure of 1.5-2.5Pa and sputtering power of 60-90W, the oxide target is sputtered to deposit oxide on the substrate surface, and the deposition rate is 0.25-0.55 nm / s, and the deposition time is 60-130s to obtain an oxide layer.

[0036] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.02˜0.12).

[0037] Step 3: In a mixed gas atmosphere of argon and hydrogen, the metal target is sputtered at a sputtering pressure of 0.2-0.5Pa and a sputtering power of 10-60W, and metal is depo...

Embodiment 2

[0047] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:

[0048] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.

[0049] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in a mixed atmosphere of argon and oxygen, the oxide target is sputtered at a sputtering pressure of 1-2Pa and a sputtering power of 80-110W, and oxides are deposited on the surface of the substrate at a deposition rate of 0.4-0.7nm / s, and the deposition time is 70-140s to obtain an oxide layer.

[0050] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.1-0.2).

[0051] Step 3: In a mixed gas atmosphere of argon and hydrogen, sputter the metal target with a sputtering pressure of 0.3-0.6Pa and a sputtering power of 40-90W, and deposit met...

Embodiment 3

[0061] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:

[0062] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.

[0063] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in a mixed atmosphere of argon and hydrogen, the oxide target is sputtered at a sputtering pressure of 0.2-1.5Pa and a sputtering power of 100-130W, and oxides are deposited on the substrate surface at a deposition rate of 0.55-0.85nm / s, and the deposition time is 80-150s to obtain an oxide layer.

[0064] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.18-0..28).

[0065] Step 3. In a mixed gas atmosphere of argon and hydrogen, the metal target is sputtered at a sputtering pressure of 0.4-0.7Pa and a sputtering power of 70-120W, and me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a three-layer structural transparent conducting thin film for switchable glass and a preparation method thereof. The technical scheme of the invention is that: an oxide targetand a metal target are installed on a magnetron sputtering system target base; in the atmosphere of argon or mixed gas of argon or hydrogen or mixed gas of argon and oxygen, oxide is deposited on thesurface of a substrate by adopting a sputtering method to obtain an oxide layer; then in the atmosphere of the mixed gas of argon or hydrogen, metal is deposited on the surface of the oxide layer byadopting the sputtering method to obtain a metal layer; and finally, in the atmosphere of argon or the mixed gas of argon or hydrogen or the mixed gas of argon and oxygen, the oxide is deposited on the metal layer by adopting the sputtering method to prepare the three-layer structural transparent conducting thin film for the switchable glass. The three-layer structural transparent conducting thinfilm for the switchable glass is simple in process and low in production cost, and the prepared product are excellent in optimal, electrical and mechanical properties. The three-layer structural transparent conducting thin film is formed by the oxide layer, the metal layer and the oxide layer, and corresponding thicknesses of the oxide layers and the metal layer are 20 to 100nm and 3 to 20nm.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive films. In particular, it relates to a three-layer transparent conductive film for dimming glass and a preparation method thereof. Background technique [0002] Dimmable glass is composed of transparent conductive electrodes and liquid crystal layers. Its working principle is: in the absence of an electric field, the dimming glass is in a light-transmitting and opaque state; when the alternating current is applied, the liquid crystal molecules are arranged in an orderly manner, and the dimming glass is converted from a light-transmitting opaque state to a transparent state . Through the action of an electric field, fast and random switching between transparent and opaque states can be achieved. The transparent conductive electrodes in current dimming glass products mainly use indium tin oxide (ITO) thin film materials, which have the advantages of good light transmission, low surf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00C23C14/08C23C14/18C23C14/35
CPCC23C14/08C23C14/185C23C14/352H01B13/0026
Inventor 张雄涛祝柏林许雄飞赵绚张恩王崇杰陈红祥
Owner HUBEI SHALLPHA TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products