Three-layer transparent conductive film for dimming glass and preparation method thereof
A technology of transparent conductive film and three-layer structure, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, coating, etc., can solve the problems of improving and unfavorable transparent conductive properties of films, and achieve light transmission High efficiency, good transparent conductivity, excellent mechanical properties
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0033] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:
[0034] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.
[0035] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in an argon atmosphere, under the conditions of sputtering pressure of 1.5-2.5Pa and sputtering power of 60-90W, the oxide target is sputtered to deposit oxide on the substrate surface, and the deposition rate is 0.25-0.55 nm / s, and the deposition time is 60-130s to obtain an oxide layer.
[0036] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.02˜0.12).
[0037] Step 3: In a mixed gas atmosphere of argon and hydrogen, the metal target is sputtered at a sputtering pressure of 0.2-0.5Pa and a sputtering power of 10-60W, and metal is depo...
Embodiment 2
[0047] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:
[0048] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.
[0049] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in a mixed atmosphere of argon and oxygen, the oxide target is sputtered at a sputtering pressure of 1-2Pa and a sputtering power of 80-110W, and oxides are deposited on the surface of the substrate at a deposition rate of 0.4-0.7nm / s, and the deposition time is 70-140s to obtain an oxide layer.
[0050] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.1-0.2).
[0051] Step 3: In a mixed gas atmosphere of argon and hydrogen, sputter the metal target with a sputtering pressure of 0.3-0.6Pa and a sputtering power of 40-90W, and deposit met...
Embodiment 3
[0061] A three-layer transparent conductive film for dimming glass and a preparation method thereof. The steps of the preparation method described in this embodiment are:
[0062] Step 1: Install the oxide target and the metal target on the target base of the magnetron sputtering system.
[0063] Step 2. Vacuumize the cavity of the magnetron sputtering system to a pressure less than 3×10 -3 Pa, in a mixed atmosphere of argon and hydrogen, the oxide target is sputtered at a sputtering pressure of 0.2-1.5Pa and a sputtering power of 100-130W, and oxides are deposited on the substrate surface at a deposition rate of 0.55-0.85nm / s, and the deposition time is 80-150s to obtain an oxide layer.
[0064] The flow ratio of the argon to oxygen and the flow ratio of the argon to hydrogen are both 1:(0.18-0..28).
[0065] Step 3. In a mixed gas atmosphere of argon and hydrogen, the metal target is sputtered at a sputtering pressure of 0.4-0.7Pa and a sputtering power of 70-120W, and me...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com