Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ITO thin film

A technology of thin film and variable temperature buffering, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of affecting the electron mobility and optical properties of thin films, the reduction of electron mean free path and optical bandgap, nanometer Difficult to control the order of magnitude film thickness, etc., to achieve the effect of high carrier concentration and mobility, wide band gap, and wide Eg

Inactive Publication Date: 2020-10-13
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Chinese patent application CN2018111147506 discloses a method for preparing (004) preferentially oriented ITO films by a sol-gel method. Although (004) preferentially oriented is obtained, it involves many processes such as compounding, homogenizing, drying, and annealing, and The surface of the film is rough and uneven, and the thickness of the nanometer film is difficult to control
[0005] Chinese patent application CN2016111663657 discloses a method for preparing a 400 main peak crystal plane height preferential orientation ITO film, through the gradient control of oxygen partial pressure during the growth process, the oxygen partial pressure in the cavity is reduced while the film is continuously growing, and (004) is preferred ITO film, but reducing the oxygen partial pressure will inevitably increase the concentration of oxygen vacancies, resulting in a decrease in the electron mean free path and optical band gap, affecting the electron mobility and optical properties of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ITO thin film
  • ITO thin film
  • ITO thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A kind of ITO thin film, comprises temperature-variable buffer layer and orientation growth layer, and wherein temperature-variable buffer layer is ITO polycrystalline thin film homogeneous buffer layer, adopts magnetron sputtering growth, through the temperature gradient in the sputtering growth process, makes buffer layer have ( 004) preferred orientation, the thickness of the temperature-variable buffer layer is 20 nm, and the carrier concentration of the temperature-variable buffer layer is 1E18 cm at 300 K -3 , electron mobility at 50 cm 2 / Vs, the average transmittance of visible light at 300 K is 95%. The oriented growth layer is grown by magnetron sputtering, and continues to inherit the (004) orientation of the temperature-changing buffer layer. The thickness of the oriented growth layer is 20 nm, and the carrier concentration of the oriented growth layer is 1E18cm at 300 K. -3 , electron mobility 50 cm 2 / Vs, the visible light transmittance of the oriented g...

Embodiment 2

[0030] A kind of ITO thin film, comprises temperature-variable buffer layer and orientation growth layer, and wherein temperature-variable buffer layer is ITO polycrystalline thin film homogeneous buffer layer, adopts magnetron sputtering growth, through the temperature gradient in the sputtering growth process, makes buffer layer have ( 004) preferred orientation, the thickness of the temperature-variable buffer layer is 50 nm, and the carrier concentration of the temperature-variable buffer layer is 1E21 cm at 300 K -3 , electron mobility is 30 cm 2 / Vs, the average transmittance of visible light at 300 K is 90%. The oriented growth layer is grown by magnetron sputtering, and continues to inherit the (004) orientation of the temperature-variable buffer layer. The thickness of the oriented growth layer is 200 nm, and the carrier concentration of the oriented growth layer is 1E21cm at 300 K. -3 , electron mobility 30 cm 2 / Vs. The visible light transmittance of the oriented...

Embodiment 3

[0033] A kind of ITO thin film, comprises temperature-variable buffer layer and orientation growth layer, and wherein temperature-variable buffer layer is ITO polycrystalline thin film homogeneous buffer layer, adopts magnetron sputtering growth, through the temperature gradient in the sputtering growth process, makes buffer layer have ( 004) preferred orientation, the thickness of the temperature-variable buffer layer is 100 nm, and the carrier concentration of the temperature-variable buffer layer is 1E22 cm at 300 K -3 , the electron mobility is 20 cm 2 / Vs, the average visible light transmittance of the buffer layer at 300 K is 85%. The oriented growth layer is grown by magnetron sputtering, and continues to inherit the (004) orientation of the variable temperature buffer layer. The thickness of the oriented growth layer is 1000 nm, and the carrier concentration of the oriented growth layer is 1E22 cm at 300 K. -3 , electron mobility 20 cm 2 / Vs. The average visible lig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an ITO thin film. The ITO thin film comprises an oriented growth layer and a variable temperature buffer layer. Compared with the prior art, the ITO thin film has the advantages that a preferred orientation thin film with excellent transparent conductivity can be obtained without introducing a heterogeneous buffer layer, and the ITO thin film is wide in forbidden band width Eg, high in visible light transmittance, high in carrier concentration and mobility and excellent in optical performance.

Description

technical field [0001] The invention relates to the field of functional thin film materials and devices, in particular to an ITO thin film. Background technique [0002] Bandgap Width of Wide Bandgap Transparent Conductive ITO Films at Room Temperature E g Between 3.5-4.3 eV, it has the advantages of high visible light transmittance, high carrier concentration and mobility, high infrared emissivity and other photoelectric transport properties, and has high hardness, and the amorphous film is easy to etch into electrode patterns And other advantages, are widely used in high mobility thin film transistors, color filters, touch screens, photovoltaics, energy-saving glass and other fields. With the continuous refinement of application scenarios, further improving the transparent conductive properties of ITO films and reducing manufacturing costs have always been the focus of research and development of related industrialization technologies. [0003] DC magnetron sputtering, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/02C23C14/35
CPCC23C14/086C23C14/024C23C14/35
Inventor 宋世金朱刘任丽
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com