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Resonant tunneling diode and manufacturing method thereof

A technology of resonant tunneling and fabrication methods, which is applied in the fields of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of large differences in activity, performance defects of resonant tunneling diodes, insufficient power of resonant tunneling diodes, etc. Lattice mismatch, the effect of increasing power

Pending Publication Date: 2020-10-16
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the forbidden band width of AlGaN material changes with the change of Al composition, which will lead to the instability of the resonant tunneling effect of the resonant tunneling diode, which will lead to insufficient power of the resonant tunneling diode
However, due to the large atomic radius of In atoms compared with its atoms and the large difference in activity, InAlN materials are prone to phase separation and other problems, which will directly lead to performance defects of resonant tunneling diodes.

Method used

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  • Resonant tunneling diode and manufacturing method thereof
  • Resonant tunneling diode and manufacturing method thereof
  • Resonant tunneling diode and manufacturing method thereof

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Embodiment 1

[0027] This embodiment provides a resonant tunneling diode, such as figure 1 As shown, the resonant tunneling diode includes a substrate 1 and an epitaxial portion A formed on the substrate 1 . The epitaxial part A includes a first barrier layer 2 , a potential well layer 3 and a second barrier layer 4 sequentially stacked on the substrate 1 . Wherein, the potential well layer 3 of this embodiment is made of GaN material, and the first barrier layer 2 and the second barrier layer 4 are both made of AlN material. In this embodiment, in order to overcome the problem of large lattice mismatch between GaN material and AlN material, when growing the potential well layer 3, the first barrier layer 2 and the second barrier layer 4, molecular beam epitaxy process.

[0028] Specifically, the epitaxial portion A further includes a first electrode 10 and a second electrode 11 for conducting with external electronic devices. In order to provide a good environment for current transmissi...

Embodiment 2

[0033] This embodiment provides a specific manufacturing method of the resonant tunneling diode of the first embodiment. The manufacturing method includes: sequentially stacking and forming a first barrier layer 2, a potential well layer 3 and a second barrier layer 4 on a substrate 1 by using a molecular beam epitaxy process; wherein, the first barrier layer 2 and The growth material of the second barrier layer 4 is AlN material, and the growth material of the potential well layer 3 is GaN material.

[0034] Specifically, such as Figure 2a to Figure 2g As shown, the preparation method specifically includes:

[0035] A substrate 1 is provided, and the substrate 1 is preferably a GaN substrate.

[0036] A first ohmic contact layer 5 is formed on the substrate 1 . Specifically, the first ohmic contact layer 5 is grown on the substrate 1 by molecular beam epitaxy. Wherein, the growth material is GaN material heavily doped with Si, and the Si doping concentration of the GaN m...

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Abstract

The present invention discloses a resonant tunneling diode. The resonant tunneling diode comprises a substrate and an epitaxial part formed on the substrate, the epitaxial part comprises a first barrier layer, a potential well layer and a second barrier layer which are stacked on the substrate in sequence, the first barrier layer and the second barrier layer are both made of an AlN material, and the potential well layer is made of a GaN material. The invention further discloses a manufacturing method of the resonant tunneling diode. The resonant tunneling diode solves the problem that an existing resonant tunneling diode is low in power.

Description

technical field [0001] The invention relates to the technical field of nanometer semiconductor devices, in particular to a resonant tunneling diode and a manufacturing method thereof. Background technique [0002] The third-generation semiconductor materials represented by GaN (gallium nitride) have large band gap, high conduction band discontinuity, high thermal conductivity, high critical field strength, high carrier saturation rate and high The excellent properties such as two-dimensional electron gas concentration at the junction interface have attracted much attention. [0003] The GaN-based resonant tunneling diode using GaN material (the potential well layer is made of GaN material), inherits the advantages of GaN-based compound semiconductor material heterojunction, has the characteristics of high operating frequency, high power and high temperature resistance, and has become a nanometer Research hotspots in the field of devices. [0004] At present, materials comm...

Claims

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Application Information

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IPC IPC(8): H01L29/88H01L21/329H01L21/02
CPCH01L29/882H01L29/66151H01L21/0254H01L21/0262
Inventor 邱海兵杨文献边历峰陆书龙周祥鹏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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