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LDMOS manufactured by using Schottky diode as field plate and manufacturing method of LDMOS

A technology of Schottky diodes and field plates, which is applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of LDMOS lack of withstand voltage and efficiency

Inactive Publication Date: 2020-10-20
GTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a kind of LDMOS made by using Schottky diode as field plate and its manufacturing method in order to overcome the defect that contact hole field plate LDMOS still lacks sufficient withstand voltage and efficiency in the prior art

Method used

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  • LDMOS manufactured by using Schottky diode as field plate and manufacturing method of LDMOS
  • LDMOS manufactured by using Schottky diode as field plate and manufacturing method of LDMOS
  • LDMOS manufactured by using Schottky diode as field plate and manufacturing method of LDMOS

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Embodiment 1

[0045] This embodiment provides a method for fabricating an LDMOS using a Schottky diode as a field plate, image 3 The flow of the manufacturing method is shown, Figure 4 The effect comparison between the manufacturing method and the Schottky diode manufacturing method is shown. like image 3 As shown, the method of making an LDMOS by using a Schottky diode as a field plate includes the following steps:

[0046] Step S101, preparing a semiconductor substrate.

[0047] Step S102 , forming an N-drift region in the semiconductor substrate, and simultaneously forming a cathode of a high-voltage Schottky diode.

[0048] Step S103 , forming a P-type implant well in the semiconductor substrate, and the P-type implant well is in contact with the N-drift region on the left and right to form a channel region.

[0049] At this time, the production effect of LDMOS is as follows Figure 4 As shown in part A-1, the production effect of the Schottky diode is as follows Figure 4 show...

Embodiment 2

[0066] This embodiment provides an LDMOS fabricated by using a Schottky diode as a field plate, which is fabricated by the method in Embodiment 1, such as Figure 5 As shown, the LDMOS includes:

[0067] semiconductor substrate;

[0068] A P-type implant well 1 and an N-drift region 2 located in the semiconductor substrate, and the N-drift region 2 is also the cathode of a high-voltage Schottky diode;

[0069] a source 3 located in the P-type implanted well, the source comprising a P+ active region and a first N+ active region;

[0070] a drain 6 located in the N-drift region 1, the drain 6 including a second N+ active region;

[0071] a gate 4 located above the P-type implanted well 1 and the N-drift region 2;

[0072] A guard ring 9 of the high-voltage Schottky diode located in the N-drift region 2;

[0073] An alloy barrier region 5 located on the side of the gate 4 close to the N-drift region 2 and above the N-drift region 2, and an alloy region 8 located in the middle...

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Abstract

The invention discloses an LDMOS manufactured by using a Schottky diode as a field plate and a manufacturing method of the LDMOS. The method comprises the following steps: preparing a semiconductor substrate; forming an N-drift region in the semiconductor substrate, and forming a cathode of the Schottky diode at the same time; forming a P-type injection well in the semiconductor substrate; forminga gate on the upper surface of the adjacent part of the P-type injection well and the N-drift region; forming a protection ring of the Schottky diode in the N-drift region; forming an alloy barrier region on one side, close to the N-drift region, in the gate and above the N-drift region, and forming a window in the middle of the alloy barrier region to form an alloy region; forming a contact holeover the alloy region while an anode of the Schottky diode is formed. According to the invention, the Schottky diode is grafted to the traditional LDMOS, and the space charge region formed by the Schottky diode in the drift region is utilized to optimize the characteristics of the drift region, reduce the size of the drift region, increase the concentration of the drift region, obtain the minimumon-resistance and maintain the high breakdown voltage.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, and in particular relates to an LDMOS made by using a Schottky diode as a field plate and a manufacturing method thereof. Background technique [0002] Field plates are widely used in the production of low, medium and high voltage LDMOS (laterally diffused metal oxide semiconductors). The main principle of field plates is to use the coupling effect of capacitance to increase BV (breakdown voltage), suppress HCI (hot carrier effect) and Reduce Rdson (ON resistance). [0003] like figure 1 The shown Contact Field Plate (contact hole field plate) LDMOS includes a P-type implanted well 1, an N-drift region 2, a source 3 composed of P+ and N+ active regions, a gate (Poly) 4, an alloy barrier layer 5, The drain 6 and the contact hole 7 formed by the N+ active region are generally used in medium-voltage devices (10V-16V), and are a relatively new type of field plate technology. like ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/40H01L29/78
CPCH01L29/66681H01L29/782H01L29/402
Inventor 林威
Owner GTA SEMICON CO LTD