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Perfluorosulfonic acid ion exchange membrane with high proton conduction and preparation method thereof

A perfluorosulfonic acid ion and perfluorosulfonic acid membrane technology, applied in the field of ion exchange membranes, can solve the problems of ion exchange membrane dimensional stability to be improved

Pending Publication Date: 2020-10-23
SHANDONG DONGYUE WEILAI HYDROGEN ENERGY MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Ningbo Tuopu Biotechnology Co., Ltd. disclosed in the patent CN 105914383 A a method to effectively improve the ionic conductivity of perfluorosulfonic acid membranes. Doping sulfonated graphene in perfluorosulfonic acid can significantly improve the proton conduction of the membrane rate, but the membrane prepared by casting method has not undergone high-temperature rearrangement process, resulting in the dimensional stability of the ion-exchange membrane to be improved

Method used

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  • Perfluorosulfonic acid ion exchange membrane with high proton conduction and preparation method thereof
  • Perfluorosulfonic acid ion exchange membrane with high proton conduction and preparation method thereof

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Embodiment 1

[0032] (1) 40wt% sulfonated graphene and 60wt% short-chain branched perfluorosulfonic acid resin are mixed uniformly in proportion, and then melted and extruded by a twin-screw extruder to obtain sulfonated graphene doping after granulation Perfluorosulfonic acid resin masterbatch, melt processing temperature is 200 ℃. The number of layers of the sulfonated graphene is 5 layers, the radial dimension is 500nm, the thickness is 20nm, and the S element content is 6wt%.

[0033] (2) The sulfonated graphene-doped perfluorosulfonic acid resin masterbatch of 50wt% prepared in step (1) is mixed in proportion with the short-chain branched perfluorosulfonic acid resin of 50wt%, and then extruded by twin-screw The machine was melt-extruded to form a film to obtain a perfluorosulfonic acid film doped with sulfonated graphene. The melting processing temperature was 200° C., and the thickness of the prepared perfluorosulfonic acid film doped with sulfonated graphene was 100 μm.

[0034] Th...

Embodiment 2

[0039] (1) 20wt% sulfonated graphene and 80wt% long-chain branched perfluorosulfonic acid resin are mixed uniformly in proportion, and then melted and extruded by a twin-screw extruder to obtain sulfonated graphene doping after granulation Perfluorosulfonic acid resin masterbatch, melt processing temperature is 200 ℃. The number of layers of the sulfonated graphene is 5 layers, the radial dimension is 500nm, the thickness is 20nm, and the S element content is 6wt%.

[0040] (2) The 20wt% sulfonated graphene-doped perfluorosulfonic acid resin masterbatch prepared in step (1) is mixed in proportion with the long-chain branched perfluorosulfonic acid resin of 80wt%, and then extruded by twin-screw The machine was melt-extruded to form a film to obtain a perfluorosulfonic acid film doped with sulfonated graphene. The melting processing temperature was 200° C., and the thickness of the prepared perfluorosulfonic acid film doped with sulfonated graphene was 100 μm.

[0041] The EW ...

Embodiment 3

[0046] (1) 10wt% sulfonated graphene and 90wt% long-chain branched perfluorosulfonic acid resin are mixed uniformly in proportion, and then melted and extruded by a twin-screw extruder to obtain sulfonated graphene doping after granulation Perfluorosulfonic acid resin masterbatch, the melt processing temperature is 250°C. The number of layers of the sulfonated graphene is 7 layers, the radial dimension is 1 μm, the thickness is 20 nm, and the S element content is 6 wt%.

[0047] (2) The 10wt% sulfonated graphene-doped perfluorosulfonic acid resin masterbatch prepared in step (1) is mixed in proportion with the long-chain branched perfluorosulfonic acid resin of 90wt%, and then extruded by twin-screw The machine was melted and extruded to form a film to obtain a perfluorosulfonic acid film doped with sulfonated graphene. The melting processing temperature was 250° C., and the thickness of the prepared perfluorosulfonic acid film doped with sulfonated graphene was 150 μm.

[00...

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Abstract

The invention relates to a perfluorosulfonic acid ion exchange membrane with high proton conduction and a preparation method thereof, and belongs to the technical field of ion exchange membranes. Theperfluorosulfonic acid ion exchange membrane with high proton conduction is prepared from sulfonated graphene doped perfluorosulfonic acid resin master batch and perfluorosulfonic acid resin through melt extrusion. The perfluorosulfonic acid ion exchange membrane with high proton conduction disclosed by the invention has high proton conductivity and dimensional stability; meanwhile, the inventionfurther provides a preparation method which is scientific and reasonable in design, simple and easy to implement.

Description

technical field [0001] The invention relates to a perfluorosulfonic acid ion-exchange membrane with high proton conductivity and a preparation method thereof, belonging to the technical field of ion-exchange membranes. Background technique [0002] Due to its unique perfluorinated main chain structure, perfluorosulfonic acid ion exchange membrane has excellent chemical stability, electrochemical stability and thermal stability, so it is widely used in fuel cells, electrolyzed water, electrodialysis, flow batteries and other fields. The current commercial homogeneous perfluorosulfonic acid ion exchange membranes are mainly the Nafion series produced by Chemours, but the price is high. Improving the proton conductivity of the perfluorosulfonic acid ion exchange membrane is beneficial to improving the power output of the corresponding electrochemical device. Generally, increasing the ion exchange capacity of perfluorosulfonic acid resin is an effective way to improve the prot...

Claims

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Application Information

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IPC IPC(8): C08J5/22C08L27/18C08L29/10C08K9/00C08K3/04H01M8/1048H01M8/1069H01M8/1088
CPCC08J5/2237C08J5/2293H01M8/1048H01M8/1069H01M8/1088C08J2327/18C08J2329/10C08K9/00C08K3/042Y02E60/50
Inventor 巩守涛邹业成丁涵张永明
Owner SHANDONG DONGYUE WEILAI HYDROGEN ENERGY MATERIAL CO LTD
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