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Preparation method of passivation contact solar cell

A solar cell, passivation reduction technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing process steps, reducing solar cell production capacity, and reducing solar cell quality

Inactive Publication Date: 2020-10-23
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] However, increasing the process steps means reducing the yield of solar cells and may even reduce the quality of solar cells

Method used

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  • Preparation method of passivation contact solar cell
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  • Preparation method of passivation contact solar cell

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preparation example Construction

[0038] Such as figure 1 As shown, the embodiment of the present invention provides a method for preparing a passivated contact solar cell, comprising the following steps:

[0039] Step 101, cleaning, texturing and doping the silicon wafer.

[0040] Step 102 , preparing an oxidation protection layer 33 .

[0041] In the embodiment of the present invention, the doped surface is protected by low-temperature furnace tube oxidation process, or nitric acid oxidation process, or ozone oxidation process, or atomic layer deposition (ALD) growth, or low-pressure chemical vapor deposition (LPCVD) in-situ growth oxidation protection. layer. The oxidation protection layer includes: a single-layer film or a laminated film of several kinds of silicon oxide, titanium oxide and silicon oxynitride. Compared with the existing technology, the oxidation protection layer not only covers the doped surface, but also covers the side of the silicon wafer, such as figure 2 shown.

[0042] It shoul...

Embodiment 1

[0062] This example illustrates a preparation process for a high-performance passivated contact solar cell, and the specific steps are as follows:

[0063] 1. Cleaning, texturing, and doping: select an N-type single crystal silicon substrate with a resistivity of 0-30Ω·cm and a thickness of 50-300μm. After cleaning and texturing one side of the silicon wafer 31, the silicon The sheet is doped to form a doped layer 32, and the boron (B) doping concentration range is 1.0E19atoms / cm 3 -2.0E21 atoms / cm 3 , and then use the temperature of 1000°C to advance and diffuse the doped B;

[0064] 2. Preparing and depositing an oxidation protection layer 33: using low-pressure chemical deposition (LPCVD) equipment, growing a 50nm oxidation protection layer 33 in situ on the doped surface of the silicon wafer, which can be an oxide layer (SiO 2 ), after completing this step, if figure 2 shown.

[0065] 3. Preparation of low-pressure chemical deposition (LPCVD) ultra-thin passivation di...

Embodiment 2

[0073] This example illustrates a preparation process for a high-performance passivated contact solar cell, and the specific steps are as follows:

[0074] 1. Cleaning, texturing, and doping: select an N-type single crystal silicon substrate with a resistivity of 0-30Ω·cm and a thickness of 50-300μm. After cleaning and texturing one side of the silicon wafer 31, the silicon The sheet is doped to form a doped layer 32, and the boron (B) doping concentration range is 1.0E19atoms / cm 3 -2.0E21 atoms / cm 3 , and then use the temperature of 1000°C to advance and diffuse the doping B.

[0075] 2. Preparing and depositing an oxidation protection layer 33: using low-pressure chemical deposition (LPCVD) equipment, growing a 100nm oxidation protection layer 33 in situ on the doped surface of the silicon wafer, which can be an oxide layer (SiO 2 ), after completing this step, if figure 2 shown.

[0076] 3. Preparation of low-pressure chemical deposition (LPCVD) ultra-thin passivation ...

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Abstract

The invention relates to a preparation method of a passivation contact solar cell, and relates to the field of solar cell manufacturing. The method comprises the following step: forming an oxidation protection layer on a first surface of a doped silicon wafer, wherein the first surface of the silicon wafer comprises a doped surface of one surface of the silicon wafer and a side surface of the silicon wafer. According to the technical scheme provided by the invention, the process can be simplified, and the productivity of the solar cell can be improved.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a method for preparing a passivated contact solar cell. Background technique [0002] The main process of the passivation contact of crystalline silicon solar cells is to generate an ultra-thin oxide layer on the surface of the silicon wafer, and grow a doped crystalline silicon film on the oxide layer, and then dope the crystalline silicon film. In the above process, it is inevitable that plating will be formed on the other side and the edge, which will lead to doping on the edge of the silicon wafer, which will cause battery leakage. [0003] In order to reduce edge leakage, a cleaning or dry etching process before annealing is usually added before the high-temperature activation process to reduce the doping amount of edge plating and reduce edge leakage. [0004] However, adding process steps means reducing the yield of solar cells, and may even reduce the quality of s...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/182H01L31/1864Y02E10/546Y02P70/50
Inventor 唐文帅张俊兵尹海鹏
Owner JA SOLAR TECH YANGZHOU
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