A kind of ultraviolet gan light source and preparation method thereof
A light source and ultraviolet technology, which is applied in the field of ultraviolet GaN light source and its preparation, can solve the problems of GaN-based ultraviolet light-emitting devices, such as the limitation of the application range, the inability to release ultraviolet light of different wavelengths, and a single emission wavelength, to achieve controllable emission wavelengths, Good practicability and uniform luminous intensity
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[0027] The invention provides a method for preparing an ultraviolet GaN light source, such as figure 1 shown, including the following steps:
[0028] Step S1, etching a plurality of circular hole patterns on the upper surface of the silicon substrate with a thickness of 100 mm to 500 mm at equal intervals (equal distance from the center of the circle), each of which has the same depth of 100 nm to 300 nm , the diameters of the circular hole patterns are different, and the diameter ranges from 100 nm to 500 nm.
[0029] Step S2, uniformly depositing an AlN buffer layer on the surface of the silicon substrate etched with circular hole patterns, wherein the thickness of the AlN buffer layer is 50 nm to 500 nm.
[0030] Step S3, removing the position of the bottom of the circular hole pattern on the AlN buffer layer, at an angle of 30° to the normal direction of the silicon substrate. o ~ 60 o Uniform deposition of a layer of SiO at an included angle 2 dielectric layer, wherei...
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[0037] A preparation method for an ultraviolet GaN light source, comprising:
[0038] In step S1, the silicon substrate 1 is sampled, and the surface of the silicon substrate 1 is cleaned with a standard RCA solution for 15 minutes.
[0039] Step S2, spin-coat the photoresist on the silicon substrate 1, and use the photolithography technology to prepare the diameters of 100 nm, 150 nm, 200 nm, 300 nm nm, and use dry etching technology to etch each circle into a circular hole pattern with a depth of 100 nm, so that the bottom plane of each circular hole pattern is on the same horizontal reference line, which can ensure different luminous wavelengths The luminous intensity is uniform; among them, the etching gas adopts SF 6 , etching pressure 20 Pa ~ 100 Pa, gas flow 30 ml / min ~ 200 ml / min, etching power 50 W ~ 400W, etching time 1 min ~ 20min.
[0040]Step S3, using metal-organic vapor phase epitaxy to uniformly deposit and grow a 50 nm thick AlN buffer layer 2 on the upper s...
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