A kind of low-cost kesterite structure copper-iron-tin-sulfur thin film and electrochemical preparation method thereof

A kesterite structure, copper-iron-tin-sulfur technology, applied in the low-cost kesterite structure Cu2FeSnS4 thin film and its electrochemical preparation, CFTS thin film solar cell absorber field, can solve the problem of high equipment price, complexity, and difficulty in large-scale production. Realization and other problems, to achieve the effect of short response time, simple equipment and low price

Active Publication Date: 2021-07-13
CENT SOUTH UNIV
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently Cu 2 FeSnS 4 The preparation of absorbing layer materials is mainly divided into vacuum technology (thermal evaporation, magnetron sputtering, etc.) and non-vacuum technology (solution method, electrodeposition method, etc.). Although vacuum technology has good film quality, the equipment required is expensive. and complex, making mass production difficult

Method used

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  • A kind of low-cost kesterite structure copper-iron-tin-sulfur thin film and electrochemical preparation method thereof
  • A kind of low-cost kesterite structure copper-iron-tin-sulfur thin film and electrochemical preparation method thereof
  • A kind of low-cost kesterite structure copper-iron-tin-sulfur thin film and electrochemical preparation method thereof

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Embodiment 1

[0026] 1) Clean the Mo glass substrate, (i) first wash the bottom with detergent to remove the grease on the hands and the substrate; (ii) then put the substrate in acetone solution for 10 minutes to remove the MoO on the Mo surface 3 (iii) then ultrasonically cleaning the substrate in an ethanol solution to remove residues of grease, acetone, etc. on the substrate; (iv) ultrasonically cleaning the substrate in ultrapure water for 10 minutes to clean the residual ethanol; (v ) to dry the substrate for use.

[0027] 2) Weigh 2mmol CuCl 2 2H 2 O, trisodium citrate of 10mmol, 5mmol tartaric acid are made the copper metal salt solution of PH=4.6. Cu / Mo precursor thin films were prepared by using Mo-coated glass as the working electrode, graphite as the counter electrode, and a saturated calomel electrode as the reference electrode. The working electrode was deposited in a copper electrolyte at a constant potential of -1.1V for 1600s.

[0028] 3) Weigh 3mmol SnCl 4 2H 2 O, 3mm...

Embodiment 2

[0033] 1) Clean the Mo glass substrate, (i) first wash the bottom with detergent to remove the grease on the hands and the substrate; (ii) then put the substrate in acetone solution for 10 minutes to remove the MoO on the Mo surface 3 (iii) then ultrasonically cleaning the substrate in an ethanol solution to remove residues of grease, acetone, etc. on the substrate; (iv) ultrasonically cleaning the substrate in ultrapure water for 10 minutes to clean the residual ethanol; (v ) to dry the substrate for use.

[0034] 2) Weigh 2mmol CuCl 2 2H 2 O, trisodium citrate of 10mmol, 5mmol tartaric acid are made the copper metal salt solution of PH=4.6. Cu / Mo precursor thin films were prepared by using Mo-coated glass as the working electrode, graphite as the counter electrode, and a saturated calomel electrode as the reference electrode. The working electrode was deposited in a copper electrolyte at a constant potential of -0.8V for 1600s.

[0035] 3) Weigh 3mmol SnCl 4 2H 2O, 3mmo...

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Abstract

The invention discloses a kesterite-structured copper-iron-tin-sulfur film for low-cost photovoltaic cells and an electrochemical preparation method thereof, comprising the following steps: respectively configuring Cu, Sn, and Fe three metal salt solutions according to the molar ratio; using three electrodes system, three metal stacks of Cu, Sn, and Fe were sequentially deposited on the Mo substrate at constant potential; using high-purity nitrogen as a protective gas, annealing pretreatment was performed on the metal stack at 150-300°C; finally, nitrogen For the protective gas, sulfur powder is used as the sulfur source, and the copper-iron-tin film is subjected to sulfidation annealing at 500-600 ° C to obtain Cu with kesterite structure. 2 FeSnS 4 film. This preparation method can accurately control the deposition time and deposition potential of each layer of metal film, and realize the Cu 2 FeSnS 4 Independent controllability of film composition ratio, grain size, thickness and morphology. The method has short reaction time, low deposition temperature, simple operation, low preparation cost, and is green and pollution-free. Suitable for photovoltaic cell absorber layer Cu 2 FeSnS 4 Mass production of thin films.

Description

technical field [0001] The invention belongs to the field of preparation methods of absorbing layer films for solar photovoltaic cells, and relates to a low-cost kesterite structure Cu 2 FeSnS 4 Thin film and its electrochemical preparation method, the kesterite structure Cu 2 FeSnS 4 The thin film is applied to the absorber layer of CFTS thin film solar cells. Background technique [0002] Today, with the rapid development of industrialization, people's demand for energy continues to increase. With the world-class problem of the depletion of traditional fossil energy, the environmental problems caused by energy consumption have become another obstacle to energy development that needs to be solved urgently. The development of solar cells has become an important way to solve energy and environmental problems. [0003] Among many solar cells, CuIn x Ga 1-x S(Se) 2 (CIGS) thin film solar cells have good stability and up to 10 4 cm -1 ~10 5 cm -1 The absorption coeff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/38C25D3/30C25D3/20C25D5/10C25D5/50
CPCC25D3/20C25D3/30C25D3/38C25D5/10C25D5/505
Inventor 周继承国晓微
Owner CENT SOUTH UNIV
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