Silicon-based infrared polarization spectrum chip based on up-conversion film and pixelated polarization metamaterial, and preparation method of up-conversion film

Abstract

The invention discloses a silicon-based infrared polarization spectrum chip based on an up-conversion film and a pixelated polarization metamaterial, and a preparation method of the up-conversion film. The polarization spectrum chip comprises an optical focusing micro-lens array, a pixelated polarization metamaterial array, an up-conversion film and a photoelectric conversion substrate. The methodfor manufacturing the up-conversion film comprises the steps of material preparation, ultrasonic dispersion, magnetic stirring, spin-coating and spin-coating, heating and baking, observation and precipitation, film sealing and the like. According to the invention, the chip and the preparation working mode have the advantages that the overall production process is simple and mature, the weight andsize of a detection system are greatly reduced, the structural complexity of an optical-mechanical system is far lower than that of an infrared polarization imaging device based on an existing technical scheme, and miniaturization of the system is facilitated; and the pixel polarization metamaterial array is adopted, moving parts do not exist, and compared with a traditional mode that a polarization wheel or a wave plate needs to be rotated, the stability is very good.

Description

technical field [0001] The invention relates to the field of infrared detection technology, in particular to a silicon-based infrared polarization spectrum chip, in particular to a silicon-based infrared polarization spectrum chip based on an up-conversion film and a pixel-based polarization metamaterial, its application method, and an up-conversion film. Preparation. Background technique [0002] Obtaining more attributes of the target is the goal that optical sensors are constantly pursuing. Infrared detection technology has important applications in many fields, including industry, agriculture, earth environment, biomedicine, atmosphere, astronomy, etc. At present, infrared detection mainly uses InGaAs (invention patent: an InGaAs short-wave infrared detector, publication number: CN 105914250A) or germanium (invention patent: an integrated infrared bandpass filter and spectrometer, publication number: CN 207457534 U) detectors, indium gallium arsenide or germanium based...

AI Technical Summary

Problems solved by technology

Compared with traditional infrared detection optical devices, the silicon-based infrared polarization spectrum chip adds an up-conversion film and a pixel-based polarization metamaterial structure. The up-conversion film is a luminescent material that can emit visible light when excited by infrared light, which can realize infrared spectrum Converted into the visible spectrum, so that compared with InGaAs or Germanium-based detectors, silicon-based detectors with more mature technology can be detected; traditional polarization modulation is a dielectric material polarization control device, which is bulky and difficult to prepare On the pixel of the detector, realize the pixelization

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