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A method for preparing periodic pn junction graphene based on high-purity semi-insulating silicon carbide substrate

A silicon carbide substrate, semi-insulating technology, applied in the field of microelectronic materials, can solve the problems of reduced doping concentration, long atomic diffusion distance, unsuitable for pn junction strips, etc., to ensure integrity, improve transmission characteristics, and excellent Effects of photoelectric conversion characteristics and electrical transport properties

Active Publication Date: 2021-11-16
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology uses ion implantation to damage the atomic layer of the surface layer of silicon carbide, and then growing graphene on the damaged atomic layer will seriously reduce the quality of graphene; The prepared graphene pn junction width needs to be above the order of millimeters, and the smaller size cannot achieve the goal, because the atom diffusion distance is far away, and the doping concentration will gradually decrease with the increase of distance
It can be seen that this method is not suitable for the preparation of micron-scale pn junction strips
[0006] However, the method of realizing periodic pn junction graphene in a non-doped manner has not been reported.

Method used

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  • A method for preparing periodic pn junction graphene based on high-purity semi-insulating silicon carbide substrate
  • A method for preparing periodic pn junction graphene based on high-purity semi-insulating silicon carbide substrate
  • A method for preparing periodic pn junction graphene based on high-purity semi-insulating silicon carbide substrate

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preparation example Construction

[0048] The high-temperature furnace for preparing periodic pn-junction graphene in the present invention is prior art, and the high-temperature furnace used is a vertical high-temperature furnace generally sold on the market.

[0049] The high-purity hydrogen / argon used in the present invention is hydrogen / argon with a purity above 99.999%; the silicon carbide substrate used is a high-purity semi-insulating silicon carbide substrate with a purity above 99.999%.

Embodiment 1

[0051] (1) A 4-inch high-purity semi-insulating 4H-silicon carbide crystal is ground and polished to obtain a high-purity semi-insulating silicon carbide wafer substrate with a thickness of 350 μm, so that the surface roughness is below 0.5nm and the flatness is between 10μm, then clean the silicon surface and package it for use;

[0052] (2) Place the silicon carbide wafer substrate prepared in step (1) flat in the graphite crucible, with the silicon side facing up, and press the graphite cover tightly. Then placed in the medium frequency induction heating furnace chamber, the vacuum degree in the furnace chamber is 5.0×10 -5 mbar, quickly raise the temperature to 1300-1350°C, and keep it warm for 40 minutes to remove the adsorbed impurity gas. The specific placement is as follows figure 1 shown;

[0053] (3) Introduce high-purity hydrogen gas into the furnace chamber, control the pressure at 500mbar, continue to raise the temperature to 1550°C, and perform hydrogen etching...

Embodiment 2

[0058] (1) A 4-inch high-purity semi-insulating 4H-silicon carbide crystal is ground and polished to obtain a high-purity semi-insulating silicon carbide wafer substrate with a thickness of 350 μm, so that the surface roughness is below 0.5nm and the flatness is between 10μm, then clean the silicon surface and package it for use;

[0059] (2) Place the silicon carbide wafer substrate prepared in step (1) flat in the graphite crucible, with the silicon side facing up, and press the graphite cover tightly. Then placed in the medium frequency induction heating furnace chamber, the vacuum degree in the furnace chamber is 5.0×10 -5 mbar, quickly raise the temperature to 1300-1350°C, and keep it warm for 40 minutes to remove the adsorbed impurity gas. The specific placement is as follows figure 1 shown;

[0060] (3) Introduce high-purity hydrogen gas into the furnace chamber, control the pressure at 500mbar, continue to raise the temperature to 1550°C, and perform hydrogen etching...

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Abstract

The invention discloses a method for preparing periodic pn junction graphene based on a high-purity semi-insulating silicon carbide substrate, which belongs to the technical field of microelectronic materials. The present invention adopts the method for preparing graphene by pyrolyzing silicon carbide. Firstly, a hydrogen etching method is used to etch regular steps on the surface of the silicon carbide substrate, and then a single-layer graphene strip is grown on the etched silicon carbide silicon surface. Alternating structure of belt and buffer layers. Finally, the original buffer layer structure is transformed into p-type conductive graphene through hydrogen passivation technology, while the original single-layer graphene remains n-type conductive. Thus, periodic pn junction graphene can be prepared. The high-quality periodic pn-junction graphene prepared by the method of the invention can be widely used in the field of information electronic devices such as enhanced photodetectors, photosensitive elements, and logic operation field effect transistors.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and in particular relates to a method for preparing periodic pn junction graphene based on a high-purity semi-insulating silicon carbide substrate. Background technique [0002] Graphene is a two-dimensional carbon material composed of closely packed hexagonal honeycomb lattices of carbon atoms. The thickness of a single layer of graphene is only 0.335nm, which is currently the thinnest material in the world. Due to the unique structure of graphene, graphene has a zero band gap and a linear dispersion energy relationship near the Dirac point, making it exhibit many excellent properties. It mainly includes extremely high carrier mobility, high mechanical strength, high thermal conductivity and half-integer quantum Hall effect. [0003] In particular, graphene is a material with zero bandgap (that is, the bottom of the conduction band and the top of the valence band overlap), so ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184H01L31/028H01L31/103H01L31/18H01L29/16H01L21/335
CPCC01B32/184H01L29/1606H01L29/66045H01L31/028H01L31/103H01L31/1804Y02P70/50
Inventor 张福生杨昆路亚娟刘新辉牛晓龙崔景光尚远航
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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