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A kind of bmn multilayer dielectric film and preparation method thereof

A multi-layer dielectric and thin film technology, applied in the field of microelectronics, can solve the problems of high price and high production cost

Active Publication Date: 2022-02-18
QILU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the expensive raw material niobium ethoxide is mostly used as the source of Nb in the BMN multilayer dielectric film, and the production cost is high

Method used

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  • A kind of bmn multilayer dielectric film and preparation method thereof
  • A kind of bmn multilayer dielectric film and preparation method thereof

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Experimental program
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preparation example Construction

[0025] The invention provides a Bi 1.5 MgNb 1.5 o 7 A method for preparing a multilayer dielectric film, comprising the following steps:

[0026] (1) Nb 2 o 5 , hydrofluoric acid and ammonia water are mixed for precipitation reaction to obtain Nb(OH) 5 precipitation;

[0027] (2) the Nb(OH) 5 Precipitation, citric acid and water are mixed for complexation reaction to obtain niobium-CA solution;

[0028] (3) Mixing the niobium-CA solution, bismuth nitrate, magnesium nitrate, citric acid and water for complexation reaction to obtain Bi-Mg-Ni precursor sol;

[0029] (4) Using laser pulse deposition method on Pt(111) / Ti / SiO 2 MgO is deposited on the surface of the / Si(100) substrate to obtain a MgO seed layer whose orientation is (111);

[0030] 5) After coating the Bi-Mg-Ni precursor sol on the surface of the MgO seed layer with an orientation of (111), annealing heat treatment is performed under oxygen conditions to obtain a single-layer film;

[0031] (6) Repeat the c...

Embodiment 1

[0058] Pt(111) / Ti / SiO 2 / Si(100) substrates were ultrasonically cleaned in deionized water for 10 minutes, ultrasonically cleaned in acetone for 10 minutes, ultrasonically cleaned in ethanol for 10 minutes, and ultrasonically cleaned in deionized water for 10 minutes, and then dried under infrared lamps;

[0059] Press Bi 1.5 MgNb 1.5 o 7 The stoichiometric ratio weighed 30.8974g of bismuth nitrate pentahydrate, 10.8883g of magnesium nitrate hexahydrate and 8.4656g of Nb 2 o 5 ; The purity of raw materials is calculated according to 99.5%;

[0060] Will Nb 2 o 5 Mix with hydrofluoric acid at a molar ratio of 1:10, mix and dissolve in a water bath at 85°C for 1 hour, add ammonia water (mass concentration: 25%), adjust to pH > 8, and carry out precipitation reaction at 85°C , generating Nb(OH) 5 precipitation;

[0061] Nb(OH) 5 The precipitate was filtered and washed sequentially to remove F - with NH 4+ ;

[0062] Mix citric acid and water with a molar ratio of 1:20...

Embodiment 2

[0073] Pt(111) / Ti / SiO 2 / Si(100) substrates were ultrasonically cleaned in deionized water for 10 minutes, ultrasonically cleaned in acetone for 10 minutes, ultrasonically cleaned in ethanol for 10 minutes, and ultrasonically cleaned in deionized water for 10 minutes, and then dried under infrared lamps;

[0074] Press Bi 1.5 MgNb 1.5 o 7 The stoichiometric ratio weighs 15.4487gBi(NiO 3 ) 3 ·5H 2 O, 5.4441gMg(NiO 3 ) 2 ·6H 2 O and 4.2328gNb 2 o 5 ;

[0075] Will Nb 2 o 5 Mix with hydrofluoric acid at a molar ratio of 1:15, mix and dissolve in a water bath at 70°C for 1 hour, add ammonia water (mass concentration: 28%), adjust to pH > 8, and carry out precipitation reaction at 70°C , generating Nb(OH) 5 precipitation;

[0076] Nb(OH) 5 The precipitate was filtered and washed sequentially to remove F - with NH 4+ ;

[0077] Citric acid and water are mixed in a molar ratio of 1:10 to obtain an aqueous solution of citric acid;

[0078] The Nb(OH) after the abov...

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Abstract

The invention provides a BMN multilayer dielectric film and a preparation method thereof, belonging to the technical field of microelectronics. The preparation method provided by the invention comprises the following steps: Nb 2 o 5 , hydrofluoric acid and ammonia water are mixed, carry out precipitation reaction, obtain niobium hydroxide precipitation; Mix described niobium hydroxide precipitation, citric acid and water, carry out complexation reaction, obtain niobium-CA solution; Described niobium-CA solution , bismuth nitrate, magnesium nitrate, citric acid and water are mixed for complexation reaction to obtain BMN precursor sol; laser pulse deposition method is used on Pt / Ti / SiO 2 MgO is deposited on the surface of the / Si substrate to obtain a MgO seed layer; after the BMN precursor sol is coated on the surface of the MgO seed layer, annealing heat treatment is carried out under oxygen conditions to obtain a single-layer film; The single-layer film repeats the coating and annealing heat treatment process to obtain a BMN multilayer dielectric film.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a BMN multilayer dielectric film and a preparation method thereof. Background technique [0002] With the increasing frequency of communication, wireless communication technology has entered the microwave field. Correspondingly, higher requirements are put forward for various communication equipment. Agile RF terminals must be designed and prepared to adapt to different microwave communication frequency bands. Tunable microwave devices that can be used in these communication devices, such as phase shifters, electronically adjustable filters, voltage-controlled oscillators, microwave switches, etc., are widely used in microwave applications because of their frequency agility characteristics, which can improve the working efficiency of circuits and improve their environmental adaptability. It has a wide range of applications in communication systems. Varactors...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12C23C14/28C23C14/08C23C28/04
CPCC23C18/1216C23C18/1254C23C18/1295C23C18/1225C23C14/28C23C14/081C23C28/04
Inventor 石锋
Owner QILU UNIV OF TECH