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Flexible large-area perovskite photovoltaic device and preparation method thereof

A photovoltaic device and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve the problems of small crystal particle size and poor crystallinity of perovskite film, and achieve the removal of internal stress and improve Mechanical flexibility, performance-enhancing effect

Inactive Publication Date: 2020-11-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The problem to be solved by the present invention is: how to provide a flexible large-area perovskite photovoltaic device and its preparation method, aiming to provide a simple and effective treatment process to solve the problem of perovskite film crystallization in large-area perovskite photovoltaic devices The problem of poor performance and small crystal particle size can improve the performance of perovskite photovoltaic devices. Furthermore, this method can effectively remove the internal stress of perovskite films and enhance the flexibility of perovskite films, thereby providing a new way for the preparation of flexible and high-efficiency perovskite photovoltaics. Device lays the groundwork

Method used

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  • Flexible large-area perovskite photovoltaic device and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0036] Embodiment 1 (control group):

[0037] 1. Clean the substrate composed of flexible PI substrate 1 and transparent conductive anode ITO layer 2 with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0038]2. Spin-coat PEDOT:PSS (3000rpm, 60s, 45nm) on the surface of the transparent conductive anode ITO layer 2 to prepare the PEDOT:PSS anode buffer layer 3, and thermally anneal the formed film (150°C, 1h);

[0039] 3. Drop-coat the MAPbI3 (20mg / ml) perovskite solution on the edge of the PEDOT:PSS anode buffer layer 3, and prepare the solid-state perovskite active layer 4 by spin coating, and add chlorine dropwise during the remaining 25s of spin coating Benzene anti-solvent (200ul), and thermal annealing (100°C, 10min);

[0040] 4. Spin-coat the PCBM electronic buffer layer 5 on the perovskite active layer 4, and perform thermal annealing (120°C, 10min);

[0041] 5. Under the condition of vacuum degree of 3*10-3Pa, Bphen (10nm) was evaporated o...

Embodiment 2

[0046] 1. Clean the substrate composed of flexible PI substrate 1 and transparent conductive anode ITO layer 2 with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0047] 2. Spin-coat PEDOT:PSS (3000rpm, 60s, 45nm) on the surface of the transparent conductive anode ITO layer 2 to prepare the PEDOT:PSS anode buffer layer 3, and thermally anneal the formed film (150°C, 1h);

[0048] 3. Drop-coat the MAPbI3 (20mg / ml) perovskite solution on the edge of the PEDOT:PSS anode buffer layer 3, and prepare the solid-state perovskite active layer 4 by spin coating, and add chlorine dropwise during the remaining 25s of spin coating Benzene anti-solvent (200ul);

[0049] 4. Place the obtained perovskite active layer 4 in a low temperature environment (0°C, 30min), and then quickly transfer the film to a constant temperature platform for rapid thermal annealing (100°C, 10min);

[0050] 5. Spin-coat the PCBM electronic buffer layer 5 on the perovskite active layer...

Embodiment 3

[0056] 1. Clean the substrate composed of flexible PI substrate 1 and transparent conductive anode ITO layer 2 with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0057] 2. Spin-coat PEDOT:PSS (3000rpm, 60s, 45nm) on the surface of the transparent conductive anode ITO layer 2 to prepare the PEDOT:PSS anode buffer layer 3, and thermally anneal the formed film (150°C, 1h);

[0058] 3. Drop-coat the MAPbI3 (20mg / ml) perovskite solution on the edge of the PEDOT:PSS anode buffer layer 3, and prepare the solid-state perovskite active layer 4 by spin coating, and add chlorine dropwise during the remaining 25s of spin coating Benzene anti-solvent (200ul);

[0059] 4. Place the obtained perovskite active layer 4 in a low temperature environment (-10°C, 30min), and then quickly transfer the film to a constant temperature platform for rapid thermal annealing (100°C, 10min);

[0060] 5. Spin-coat the PCBM electronic buffer layer 5 on the perovskite active lay...

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Abstract

The invention discloses a flexible large-area perovskite photovoltaic device and a preparation method thereof. The perovskite photovoltaic device is sequentially provided with a flexible PI substrate,a transparent conductive anode ITO layer, a PEDOT: PSS anode buffer layer, a perovskite active layer, a PCBM electron buffer layer, a Bphen hole blocking layer and a metal cathode from bottom to top.By adopting a treatment mode of a variable-temperature rapid thermal annealing two-step method, a low-temperature crystallization method is used for inhibiting the nucleation rate of the perovskite thin film in the first step, and a rapid heating method is used for carrying out thermal annealing treatment in the second step to improve the crystallization growth rate of the perovskite thin film, thereby achieving two targets of inhibiting the nucleation rate and improving the crystal growth rate at the same time. The technical problem that the nucleation rate and crystal growth of the perovskite thin film cannot be controlled at the same time during film formation and subsequent treatment is solved.

Description

technical field [0001] The invention belongs to the field of flexible perovskite photovoltaic devices or flexible perovskite thin-film solar cells, and in particular relates to a flexible large-area perovskite photovoltaic device and a preparation method thereof. Background technique [0002] With the rapid development of economy and society, the mining and consumption of fossil energy are increasing day by day, and the two major problems of fossil energy reserves and environmental pollution have also emerged. Based on this, the development and utilization of new clean energy It is the unified cognition of all countries in the world, and it is also a necessary measure for the further development of human society. Among them, the development and utilization of solar light energy has received extensive attention from researchers. As a renewable, completely green energy, non-polluting, and daily resource with inexhaustible reserves, human life is closely related to solar light ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44
CPCH10K71/40H10K30/211H10K30/80H10K77/111Y02E10/549
Inventor 于军胜张大勇赵世雄郑华靖
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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