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A kind of mid-infrared detector and its preparation method

An infrared detector and solution technology, applied in semiconductor/solid-state device manufacturing, semiconductor device, final product manufacturing, etc., can solve problems such as staying in research and development, and achieve the goal of increasing viscosity, inhibiting nucleation speed, and improving uniformity. Effect

Active Publication Date: 2017-01-18
济源艾探电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there are few reports on the performance of lead-salt detectors in China, and most of them are still in the research and development stage.

Method used

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  • A kind of mid-infrared detector and its preparation method
  • A kind of mid-infrared detector and its preparation method
  • A kind of mid-infrared detector and its preparation method

Examples

Experimental program
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preparation example Construction

[0049] Preparation of lead salt thin film substrate: firstly, the deposition solution is moved into a deposition container, and the deposition container is placed in a water bath with a temperature of 50 to 100 ° C, and then the cleaned substrate is suspended in the middle of the deposition solution, and the rotation speed is 30 to 50 rpm The lead salt film substrate was obtained by stirring and depositing for 2.5 to 3 hours; for example: ① Turn on the magnetic stirrer, adjust and control the temperature of the water bath to 80 °C; ② Transfer the prepared solution 5 quantitatively to a 500 mL glass deposition container, wash the cleaned The quartz substrate is placed in the deposition solution horizontally; 3. the glass deposition vessel containing the solution 5 is sealed; the deposition vessel is placed in a water bath and heated and the rotational speed of the magnetic stirrer is adjusted to 50 rpm to start the deposition process; 4. Finish the deposition after 3h and take ou...

example 1

[0055] Choose a 30×40mm quartz substrate, clean it with standard cleaning process, dry it with high-purity nitrogen and place it on a fixed support.

[0056] 100mL of potassium hydroxide aqueous solution with mass concentration of 120g / L was added into the glass container filled with 190mL of distilled water, and 100mL of lead acetate solution with mass concentration of 180g / L was slowly added under the condition that the stirring speed was 300rpm. Add 10 mL of soluble starch solution with a mass concentration of 1 g / L and 100 mL of sodium selenosulfate solution with a mass concentration of 100 g / L in sequence at a dropping rate, and stir for 10 min to obtain 500 mL of colorless and transparent deposition solution.

[0057] like figure 1 As shown, the fixed support with the substrate was horizontally suspended in the deposition solution, and transferred to a water bath at 75 °C and 40 rpm, sealed, and the substrate was taken out after 3 h to complete the deposition. The lead s...

example 2

[0064] Choose a 30×40mm ordinary glass substrate, clean it with standard cleaning process, dry it with high-purity nitrogen and place it on a fixed support.

[0065] Measure 100mL sodium selenosulfate solution with a mass concentration of 205g / L, 100mL lead acetate solution with a mass concentration of 180g / L, 100mL potassium hydroxide aqueous solution with a mass concentration of 160g / L, and 10mL soluble solution with a mass concentration of 1g / L The starch solution and 190 mL of distilled water were prepared in the same manner as in Example 1 to prepare 500 mL of deposition solution.

[0066] The fixed holder with the substrate was horizontally suspended in the deposition solution, transferred to a water bath at 80° C. and 45 rpm, sealed, and the substrate was taken out after 2.5 h to complete the deposition.

[0067] The attachments on the substrate were cleaned and cut into thin film substrates of 3mm×2mm.

[0068] Put the thin film substrate into the annealing furnace, c...

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Abstract

The invention relates to an intermediate-infrared detector and a preparation method thereof. The intermediate-infrared detector comprises a substrate, a lead salt film and a passivation layer. The lead salt film is prepared by a selenosulfate solution, a lead acetate solution, a potassium hydroxide water solution and a soluble starch solution in the mass-volume percentage concentration ratio of 1: (0.8-3.5): (0.5-25): (0.0001-0.001) and in the size ratio of 1: (0.5-2.0): (0.5-4): (0.01-0.1). The intermediate-infrared detector improves the response rate and the signal to noise ratio, and reduces the production cost.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic detectors, and in particular relates to a mid-infrared detector and a preparation method thereof. Background technique [0002] An infrared photodetector is a device that receives optical signals and converts them into electrical signals. Infrared detectors are divided into refrigerated infrared detectors and uncooled infrared detectors according to whether their sensitive surfaces need to be cooled. The former is mainly used in the high-end military field, while the latter is more widely used due to its advantages of small size, low power consumption, strong environmental adaptability, and long life because it eliminates the need for refrigeration devices. [0003] Since the 1930s, uncooled photodetectors in the 1-3um and 3-5um spectral ranges are still dominated by low-cost lead sulfide and lead selenide (in the mid-infrared spectral range, lead salt detectors are sensitive and reliable. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/032H01L21/02H01L31/18
CPCH01L21/02568H01L21/02628H01L31/0324H01L31/09H01L31/1864Y02P70/50
Inventor 原子健
Owner 济源艾探电子科技有限公司
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