Packaging structure of a silicon carbide Vienna rectifier half-bridge module

Abstract

The invention discloses a package structure of a silicon carbide Vienna rectifier half-bridge module, which belongs to the technical field of power semiconductor devices. It includes a power unit and an insulating substrate; the power unit includes a diode rectification upper and lower bridge arm and a bidirectional switch bridge arm; the bidirectional switch bridge arm includes the first and second silicon carbide MOSFET chips connected in series with a common source; the surface copper layer of the insulating substrate includes positive metal layer, negative metal layer, input metal layer, output metal layer, bidirectional switching power common source metal layer, drive metal layer and thermistor metal layer; A silicon carbide MOSFET chip is located on the input metal layer, and a second silicon carbide MOSFET chip is located on the output metal layer. The invention reduces the parasitic inductance in the commutation circuit and thereby reduces the switching loss, and is more suitable for high-frequency applications; the drive of the power switch tube chip adopts Kelvin connection, which enhances the stability of the drive.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and more specifically relates to a packaging structure of a silicon carbide Vienna rectifier half-bridge module. Background technique [0002] Compared with traditional silicon-based power devices, silicon carbide power devices have higher breakdown voltage, smaller volume, higher thermal conductivity and higher operating temperature, so they are more suitable for high voltage, high temperature and high frequency applications. scene. In order to pursue a smaller converter size, the switching frequency of the power supply system continues to increase, the switching speed of the switching tube in the power module continues to increase, and the switching loss continues to decrease. In the high-frequency field, silicon carbide devices have great prospects. [0003] Theoretically, the switching frequency of silicon carbide devices can reach up to megahertz. However, most of the e...

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