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Production method and production device of silicon carbide single crystal

A silicon carbide single crystal, manufacturing device technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as wafer cracks, SiC single crystal ingot cracks, cracks, etc., to suppress cracks or cracks , the effect of small residual strain

Pending Publication Date: 2020-11-10
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] There is a problem that cracks are generated in SiC single crystal ingots manufactured using such manufacturing equipment, or wafers are cracked or cracked during slicing

Method used

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  • Production method and production device of silicon carbide single crystal
  • Production method and production device of silicon carbide single crystal
  • Production method and production device of silicon carbide single crystal

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Embodiment

[0061] Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.

[0062] (Example)

[0063] According to the manufacturing method of silicon carbide single crystal of the present invention, using figure 2 The silicon carbide single crystal manufacturing apparatus 1 shown grows a SiC single crystal having a diameter of 4 inches (100 mm) under the following growth conditions.

[0064]

[0065] Seed crystal substrate···SiC single crystal substrate with a diameter of 4 inches (100mm) whose main surface is inclined 4° from the {0001} plane to the direction

[0066] Growth temperature...2200℃

[0067] Pressure···10Torr(1.3×10hPa)

[0068] Atmosphere...Argon, Nitrogen

[0069] according to figure 1 In the procedure shown, when the grown SiC single crystal is cooled, the hole 9 for temperature measurement is closed with the shielding member 10, and five SiC single crystal ...

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Abstract

This production method of silicon carbide single crystal, for sublimating a silicon carbide raw material to grow a silicon carbide single crystal on a seed crystal substrate with a silicon carbide single crystal growth device provided with at least a growth vessel and a heat insulation vessel having a temperature measurement hole around said growth vessel, is characterized by measuring the temperature of the growth vessel through the temperature measurement hole during growth of the silicon carbide single crystal, and by blocking the temperature measurement hole with a shielding member when growth of the silicon carbide single crystal is complete and the silicon carbide single crystal is cooled. In this way, a production method and production device of a silicon carbide single crystal areprovided which decrease breakage and cracking of silicon carbide single crystal ingots and wafers.

Description

technical field [0001] The present invention relates to a method and apparatus for producing a silicon carbide single crystal in which the silicon carbide single crystal is grown by a sublimation method. Background technique [0002] In recent years, a large number of inverter circuits have been used in electric vehicles and electric cooling and heating machines. Since there is less power loss and higher withstand voltage characteristics compared with components using semiconductor Si crystals, a silicon carbide ( Later, it is sometimes called SiC) semiconductor crystal. [0003] As a typical and practical growth method for crystals having a high melting point such as SiC and crystals that are difficult to grow in the liquid phase, there is a sublimation method. The sublimation method is a method of sublimating a solid raw material at a high temperature of about 2000° C. or higher in a container to grow crystals on opposing seed crystals (Patent Document 1). [0004] Howev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
CPCC30B23/002C30B23/06C30B29/36C30B35/00
Inventor 池田均高桥亨青山徹郎
Owner SHIN-ETSU HANDOTAI CO LTD
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