Sintered body for vapor deposition and preparation method thereof

A technology of sintered body and element doping, applied in the field of plasma deposition, can solve the problems affecting the continuous progress of the coating process, the reduction of production efficiency, the powder drop of the sintered body, etc., and achieves low resistivity, excellent performance, and high carrier migration. rate effect

Active Publication Date: 2020-11-17
长沙壹纳光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, in order to solve the problem that the sintered body will drop powder during use due to its low density, which will affect the continuous progress of the coating process and lead to the reduction of production effi...

Method used

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  • Sintered body for vapor deposition and preparation method thereof
  • Sintered body for vapor deposition and preparation method thereof
  • Sintered body for vapor deposition and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] In this example, CeO 2 / (In 2 o 3 +CeO 2 ) is 0.1% by weight, and the mixed material of indium oxide and cerium oxide is treated at 1500° C. for 5 hours to obtain indium oxide crystal phase powder with bixbyite structure and solid solution of cerium, such as figure 1 shown. Then it is mixed with silica sol with a total weight content of 50ppm and pressed into a green body with a relative density of 58%, and then sintered at 900°C for 6 hours to obtain a sintered body with a sintered density of about 60%. The sintered body was subjected to the RPD vapor deposition experiment, and no spattering or powder falling was found. The mobility of the film was measured and found to be 99.6 cm2 / V.S.

Embodiment 2

[0036] The difference between this example and Example 1 is that CeO 2 / (In 2 o 3 +CeO 2 ) in a weight ratio of 0.2%, and the sintered body was subjected to an RPD evaporation test, and no spattering was found, nor powder falling. The mobility of the film was measured and found to be 121.5 cm2 / V.S.

Embodiment 3

[0038] The difference between this example and Example 1 is that CeO 2 / (In 2 o 3 +CeO 2 ) in a weight ratio of 1.0%, and the sintered body was subjected to RPD vapor deposition experiments, and no spattering was found, nor powder falling. The mobility of the film was measured and found to be 119.4 cm2 / V.S.

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Abstract

The invention provides a sintered body for vapor deposition and a preparation method thereof. The sintered body is prepared from indium oxide, a doping element x and a silicon element, the content ofthe doping element x accounts for 0.2-5.0% of the weight ratio of x oxide to (indium oxide + x oxide), the content of the silicon element in the sintered body is 5-600 ppm, and the silicon element isat least one of nano silicon oxide powder and silicon dioxide sol. Indium oxide and the oxide mixture doped with the element x are mixed at a high temperature to obtain indium oxide single crystal phase powder which is of a bixbyite structure and contains the element x in a solid solution mode, then the indium oxide single crystal phase powder is mixed with the silicon element to be pressed into ablank in required size, and then sintering is conducted to obtain a sintered body. During RPD coating with the sintered body, high mobility can be obtained, meanwhile, the problem that due to the fact that the density of the sintered body is low, powder falling in the using process affects continuous operation of the coating process, and consequently the production efficiency is reduced is solved, and shutdown is not needed for cleaning the powder falling problem any more, continuous production is achieved, and the production efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of activated plasma deposition, and in particular relates to a sintered body for vapor deposition and a preparation method thereof, which can be applied to high-conductivity transparent oxide films for solar cells and the like. Background technique [0002] Among various film materials, transparent conductive films can be widely used in solar cells, building energy-saving glass, various sensors and flat panel displays. Among them, indium oxide material is an n-type semiconductor material, which is widely used in solar cells because of its unique physical properties such as electrical conductivity close to metal and high visible light transmittance. There are many methods for preparing indium oxide thin films, the common ones are vacuum thermal evaporation, electron beam evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, spraying method and sol-gel method. The first four methods ne...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622C04B35/63C23C14/08
CPCC04B35/01C04B35/622C04B35/6303C23C14/08C04B2235/3229C04B2235/3418C04B2235/602C04B2235/656C04B2235/6567Y02P70/50
Inventor 陈明飞刘永成江长久陈明高徐胜利郭梓旋莫国仁李跃辉
Owner 长沙壹纳光电材料有限公司
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