Sintered body for vapor deposition and preparation method thereof
A technology of sintered body and element doping, applied in the field of plasma deposition, can solve the problems affecting the continuous progress of the coating process, the reduction of production efficiency, the powder drop of the sintered body, etc., and achieves low resistivity, excellent performance, and high carrier migration. rate effect
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Embodiment 1
[0034] In this example, CeO 2 / (In 2 o 3 +CeO 2 ) is 0.1% by weight, and the mixed material of indium oxide and cerium oxide is treated at 1500° C. for 5 hours to obtain indium oxide crystal phase powder with bixbyite structure and solid solution of cerium, such as figure 1 shown. Then it is mixed with silica sol with a total weight content of 50ppm and pressed into a green body with a relative density of 58%, and then sintered at 900°C for 6 hours to obtain a sintered body with a sintered density of about 60%. The sintered body was subjected to the RPD vapor deposition experiment, and no spattering or powder falling was found. The mobility of the film was measured and found to be 99.6 cm2 / V.S.
Embodiment 2
[0036] The difference between this example and Example 1 is that CeO 2 / (In 2 o 3 +CeO 2 ) in a weight ratio of 0.2%, and the sintered body was subjected to an RPD evaporation test, and no spattering was found, nor powder falling. The mobility of the film was measured and found to be 121.5 cm2 / V.S.
Embodiment 3
[0038] The difference between this example and Example 1 is that CeO 2 / (In 2 o 3 +CeO 2 ) in a weight ratio of 1.0%, and the sintered body was subjected to RPD vapor deposition experiments, and no spattering was found, nor powder falling. The mobility of the film was measured and found to be 119.4 cm2 / V.S.
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