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Plate-type integrated coating method and equipment for passivating contact solar cell

A technology for solar cells and coating equipment, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as affecting the quality of TOPCon cells, lack of stable and reliable silicon targets, and difficulty in manufacturing phosphorus-doped silicon targets, so as to improve the production yield. , the effect of reducing turnover and reducing maintenance costs

Pending Publication Date: 2020-11-27
江苏杰太光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The doping concentration in amorphous silicon depends on the doping concentration of the target material. The disadvantage is that phosphorus-doped silicon targets, especially high-concentration doped silicon targets, are difficult to manufacture, resulting in no stable and reliable silicon targets for mass production of coatings, resulting in The high production cost and poor stability of silicon targets affect the quality of TOPCon cells

Method used

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  • Plate-type integrated coating method and equipment for passivating contact solar cell
  • Plate-type integrated coating method and equipment for passivating contact solar cell

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Experimental program
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Effect test

Embodiment 1

[0027] refer to figure 1 , the plate-type integrated coating equipment of passivation contact solar cell provided by the present invention, it comprises the PECVD process chamber and the PVD process chamber that are integrally arranged continuously; A heating chamber is also arranged at the inlet end of the PECVD process chamber, and the inlet end of the heating chamber It is docked to the loading chamber, and the inlet end of the loading chamber is connected to the automatic feeding mechanism; an unloading chamber is also provided at the outlet end of the PVD process chamber, and the outlet end of the unloading chamber is connected to the cut-off automatic feeding mechanism. A carrier plate return system is set between the material mechanism; a vacuum isolation cavity is also set between the PECVD process chamber and the PVD process cavity, and the residual gas is evacuated by a molecular pump, and the silicon oxide coating process and the doped non- The crystalline silicon c...

Embodiment 2

[0034] The difference between this embodiment 2 and embodiment 1 is that in this embodiment 2, by replacing the phosphorous-doped silicon target in embodiment 1 with boron-doped silicon target, and replacing phosphine with borane, the silicon The surface of the chip realizes the coating process of the boron-doped amorphous silicon layer.

Embodiment 3

[0036] Based on the above-mentioned embodiment 1 and referring to figure 2, wherein, in step S3, the PVD process chamber includes a plurality of intervals and continuous chambers, and the targets in the plurality of continuous chambers are all rotary pure silicon column targets or phosphorus-doped silicon targets with the same or different concentrations material, the process gas is respectively introduced between the column targets, and Ar and phosphine in multiple consecutive chambers have the same or different flow ratios, so as to produce amorphous silicon films with different phosphorus doping concentrations; wherein, based on multiple When a rotating pure silicon column target or a phosphorus-doped silicon target of the same concentration is used in a continuous chamber, and Ar and phosphine have the same flow ratio, multi-layer films with the same doping concentration are obtained by continuous sputtering coating; Alternatively, based on the use of a rotating pure sili...

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Abstract

The invention discloses a plate-type integrated coating method and equipment for passivating a contact solar cell. The method comprises the following steps: S1, flatly laying a silicon wafer on a carrier plate; S2, heating the silicon wafer tiled on the carrier plate in the step S1, and then feeding the silicon wafer into a silicon oxide coating process cavity to prepare a SiO2 film; S3, enablingthe silicon wafer which is flatly laid on the carrier plate in the step S2 and subjected to SiO2 coating to enter a doped amorphous silicon coating process cavity to be subjected to doped amorphous silicon layer coating, wherein the silicon oxide coating process cavity and the doped amorphous silicon coating process cavity are arranged in an integrated continuous vacuum manner, and therefore plate-type integrated coating of the silicon wafer is realized. According to the method disclosed in the invention, a plate-type integrated coating scheme for growing SiO2 and amorphous silicon with different doping concentrations on a silicon wafer is adopted, so that in-situ doping of the amorphous silicon is effectively realized, and surface pollution caused by intermediate vacuum breaking is prevented; through an integrated continuous coating process, production processes are reduced, and therefore the production cost of the solar cell with SiO2 and amorphous silicon film layers with differentdoping concentrations is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a plate-type integrated coating method and equipment for passivation contact solar cells, which are used for silicon oxide and doped amorphous silicon coatings of solar cells, especially TOPCon cells. Background technique [0002] In recent years, the mass production and application of TOPCon battery technology has been very rapid. The core of its technology is to prepare extremely thin SiO 2 Thin layer and preparation of doped polysilicon layer, the current industry status is to prepare SiO 2 Then prepare the amorphous silicon film layer, and then realize the doping of the amorphous silicon layer by ion implantation, which requires 3 sets of equipment to be carried out in 3 steps, and finally the doped polysilicon (Poly) layer is formed by annealing, resulting in a process flow It is relatively complicated, and has the disadvantages of high equipment investment c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02164H01L21/022H01L21/02214H01L21/02318H01L31/18Y02P70/50
Inventor 陈嘉马丽敏包杰林建伟
Owner 江苏杰太光电技术有限公司