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Anode structure and preparation method thereof

A technology of anode structure and improved layer, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electrical components, etc., can solve the problems of high reflectivity, high work function and low cost anode materials, etc. Good conductivity, low resistance, the effect of reducing the turn-on voltage

Pending Publication Date: 2020-12-15
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although various schemes (CN101345292B, CN103219472B, CN107331786A) have also improved the anode characteristics to a certain extent, so far, the anode materials with high reflectivity, high work function and low cost have not been well solved.

Method used

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  • Anode structure and preparation method thereof

Examples

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Embodiment 1

[0027] The anode structure of the top-emitting OLED device micro-display of the present invention can be used to improve the reflectivity of the top-emitting OLED device micro-display, such as figure 1 As shown, on a silicon (Si) substrate, an aluminum (Al) layer, a copper (Cu) layer, and a transition metal nitride layer are sequentially included from bottom to top.

[0028] In a specific implementation, the transition metal nitrides include: binary compounds ZrN and HfN, ternary compounds ZrxHf1-xN, TixZr1-xN, HfxZr1-xN and TixHf1-xN; wherein 0<x<0.15.

[0029] In a specific implementation, the Al layer is deposited on the cleaned Si-based substrate by magnetron sputtering, and its thickness is 100-120nm; further, the Cu layer and the transition metal nitride layer can be deposited by pulsed laser Deposited on the Al layer successively, the thicknesses are respectively 5-10nm and 3-8nm.

Embodiment 2

[0031] The invention also discloses a method for preparing the anode structure, which is used for the preparation of the anode structure in Example 1. Such as figure 2 As shown, the preparation method of the anode structure may include the following steps:

[0032] In step S101, a first Al layer is prepared by magnetron sputtering deposition.

[0033] The anode structure of the top-emitting OLED device microdisplay adopts a silicon substrate. In a specific implementation, first, the silicon substrate is ultrasonically cleaned for 5 minutes using acetone, ethanol, and deionized water respectively.

[0034] After cleaning is complete, use N 2 Blow it dry and put it into the magnetron sputtering system. An Al film was deposited by sputtering an Al target in an Ar atmosphere at room temperature, with a deposition thickness of 115 nm.

[0035] Step S102, preparing a second Cu layer by pulsed laser deposition.

[0036] In a specific implementation, the deposited sample is put...

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Abstract

The invention discloses an anode structure and a preparation method thereof. The anode structure is applied to a top-emitting OLED micro-display device, is arranged on a Si substrate, and sequentiallycomprises a first reflection improvement layer which is used for improving the reflectivity of the anode structure from the bottom to the top; a second diffusion barrier layer which is used for blocking diffusion of the first reflection improving layer; and a third matching layer which is used for matching the highest occupied molecular orbital of the hole injection layer. Through the anode structure and the preparation method thereof, the anode structure of the top-emitting OLED micro-display device has the advantages of high reflectivity, high work function and low resistance.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an anode structure and a preparation method thereof. Background technique [0002] Organic Light-Emitting Devices (OLEDs) are optoelectronic products that have been extensively studied since the development of Flat panel displays and Solid-state lighting technologies. Compared with traditional bottom-emitting devices, top-emitting devices can realize high-quality display on Si-based or active-driven TFT substrates with complex circuit systems, catering to the current needs of high-resolution, large-size and full-color displays, It is the focus of current OLED research. Since the silicon-based chip substrate is opaque, the light-emitting unit of the OLED microdisplay must be designed as a top-emitting structure, which makes the top-emitting OLED (TEOLED) an important topic in the design of OLED microdisplays. Due to the need to integrate with silicon-based circuits, the selectivity of...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56H01L51/54
CPCH10K71/60H10K50/81H10K2102/00H10K2102/3026H10K71/00
Inventor 蒋春萍李玉雄刘峰峰林雨隋展鹏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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