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Preparation method of perovskite thin film and perovskite solar cell thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of fast attenuation, undurability, and impact on carrier transport performance, and achieve fewer defects, high crystal quality, and improved lubrication. wet effect effect

Pending Publication Date: 2020-12-29
HANGZHOU MICROQUANTA SEMICON CO LTD
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Problems solved by technology

However, the addition of this layer of material changes the interfacial contact characteristics of the perovskite material, affects the carrier transport performance, and is often not conducive to the device to obtain good photoelectric performance and long-term stability
In addition, UV / O is usually used 3 Treatment to improve the hydrophilic performance of the material interface, however, the improvement of hydrophilic performance obtained in this way cannot last long and decays very quickly
More importantly, organic materials widely used in perovskite solar cells are not suitable for UV / O 3 deal with

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  • Preparation method of perovskite thin film and perovskite solar cell thereof
  • Preparation method of perovskite thin film and perovskite solar cell thereof
  • Preparation method of perovskite thin film and perovskite solar cell thereof

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preparation example Construction

[0025] Please refer to figure 1 Shown, the preferred embodiment of the preparation method of perovskite film of the present invention, comprises the steps:

[0026] Step 1, depositing a hydrophobic semiconductor material on a transparent conductive substrate;

[0027] Step 2, depositing a perovskite film sacrificial layer on the surface of the hydrophobic semiconductor material;

[0028] Step 3, depositing the perovskite precursor solution on the surface of the sacrificial layer;

[0029] Step 4, annealing the substrate deposited with the perovskite precursor material to obtain a perovskite film.

[0030] Wherein, in step 1, the transparent conductive substrate has the characteristics of being highly transparent in the visible light and near-infrared light bands, and at the same time, has the ability to transport carriers, and has a light transmittance of not less than 80 in the wavelength range of 350nm to 800nm. %; the transparent conductive substrate includes a composite...

Embodiment 1

[0043] The preparation method embodiment 1 of perovskite film of the present invention comprises the following steps:

[0044] 11. Preparation of perovskite precursor solution: Dissolve 159g of methylamine hydriodide powder and 461g of lead iodide powder in 1 liter of mixed solvent of dimethyl sulfoxide and N,N-dimethylformamide, The resulting bright yellow solution was heated to 70 °C under magnetic stirring and kept for 2 h.

[0045] 12. Deposit a hydrophobic semiconductor film on a transparent conductive substrate: prepare 2 mg / ml PTAA chlorobenzene solution, spread evenly on the surface of ITO glass, spin-coat at 4000rpm / s for 20s, and anneal at 100°C for 10 minutes.

[0046] 13. Deposit the perovskite thin film sacrificial layer: place the substrate obtained in step 12 in the evaporation chamber, and the vacuum degree in the chamber is controlled at 10 -4 At about Pa, lead acetate was vapor-deposited on the surface of PTAA at an evaporation rate of 1 Å / s, and a 20-nanome...

Embodiment 2

[0050] The preparation method embodiment 2 of perovskite film of the present invention comprises the following steps:

[0051] 21. Preparation of perovskite precursor solution: Dissolve cesium iodide (CsI), formamidine hydriodide (FAI), lead iodide (PbI2), zinc bromide (Znbr2) powders in N-methylpyrrolidone In a mixed solvent with γ-butyrolactone, prepare 1.2 moles per liter of Cs0.05FA0.95PbI3(Znbr2)0.05 perovskite precursor solution, and heat the resulting bright yellow solution to 70°C under magnetic stirring conditions, And keep it for 2h.

[0052] 22. Depositing a hydrophobic semiconductor film on a transparent conductive substrate: select polyimide covered with aluminum-doped zinc oxide as the transparent conductive substrate, put it into the evaporation chamber, and control the vacuum degree in the chamber at 10 -4 At about Pa, while heating the substrate to 120°C, evaporate poly[[(4-butylphenyl)imino][1,1'-biphenyl]] at an evaporation rate of 0.5Å / s to obtain a thickn...

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Abstract

The invention relates to a preparation method of a perovskite thin film. The preparation method comprises the following steps of step 1, depositing a hydrophobic semiconductor material on a transparent conductive substrate; 2, depositing a perovskite thin film sacrificial layer on the surface of the hydrophobic semiconductor material; 3, depositing a perovskite precursor solution on the surface ofthe sacrificial layer; and step 4, annealing the substrate deposited with the perovskite precursor material to obtain the perovskite thin film. The invention also discloses a perovskite solar cell prepared by using the preparation method and a method. By introducing the perovskite thin film sacrificial layer, the wetting effect of the polar perovskite solution on the surface of the hydrophobic semiconductor material is greatly improved, and the perovskite thin film which is uniform, compact, few in defect and high in crystallization quality can be prepared.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a preparation method of a perovskite thin film and a perovskite solar cell. Background technique [0002] Generally, the method of uniformly spreading the perovskite precursor solution on the surface of the substrate to form a film, and then annealing at high temperature to prepare the perovskite crystal film is called the solution method. The photoelectric conversion efficiency of small-area devices prepared by the solution method has exceeded 23%, showing that the solution method has ultra-high photoelectric performance and excellent superiority in the preparation of high-performance perovskite thin-film solar cells. As an important method for the deposition of perovskite films, the solution method can precisely control the multicomponent components of perovskite films, which is simple and convenient, and the device exhibits excellent photoelectric ...

Claims

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Application Information

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IPC IPC(8): H01L51/00H01L51/42
CPCH10K71/12H10K71/40H10K30/00Y02E10/549
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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