Power device integrated with Schottky diode and manufacturing method thereof
A technology of Schottky diodes and power devices, which is applied in semiconductor/solid-state device manufacturing, diodes, semiconductor devices, etc., can solve problems that hinder commercial applications and complex device processes, and achieve manufacturing, simple process, and low cost Effect
Active Publication Date: 2021-01-01
SHENZHEN BASIC SEMICON LTD
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Problems solved by technology
However, the device process of silicon carbide JBSFET is relatively complicated, which hinders its commercial application.
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[0050] In order to make the technical problems, technical solutions and beneficial effects to be solved by the embodiments of the present invention clearer, the following combination Figure 1 to Figure 16 And embodiment, the present invention is described in further detail. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0051] It should be noted that when an element is referred to as being “fixed” or “disposed on” another element, it may be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. In addition, the connection can be used for both fixing and circuit communication.
[0052]It is to be understood that the terms "length", "width", "top", "bottom", "front", "rear", "left", "right",...
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Abstract
The embodiment of the invention discloses a power device integrated with a Schottky diode and a manufacturing method thereof. The method comprises the following steps: performing epitaxy; depositing silicon nitride; depositing silicon dioxide; depositing silicon nitride; etching a source region injection mask; performing source region ion implantation; etching to expose the channel and the base region; performing well region ion implantation; clearing the wafer; carrying out base region ion implantation; carrying out carbon film process and annealing; performing sacrificial oxidation; carryingout field oxygen deposition and etching; performing high-temperature thermal oxidation and annealing; depositing a polysilicon gate; etching the polycrystalline silicon; performing ILD deposition etching; and performing passivation layer deposition etching. The power device is manufactured by adopting the method. According to the embodiment of the invention, the system cost can be greatly reduced, and the high reverse recovery current and bipolar attenuation of the body diode can be avoided.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a power device integrating Schottky diodes and a manufacturing method thereof. Background technique [0002] Since silicon carbide has excellent physical and electrical properties, such as low intrinsic carrier concentration, high thermal conductivity, high breakdown field strength and excellent stability, it has become an ideal material for high-temperature and high-power semiconductor devices. Silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field-Effect Transistor), as the most mature silicon carbide power semiconductor device at present, has many excellent characteristics, and is used in electric vehicles, charging piles, uninterruptible power supplies And smart grid and many other fields are more and more widely used. [0003] There is a PN type body diode parasitic in the silicon carbide MOSFET, which can be...
Claims
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IPC IPC(8): H01L21/336H01L21/28H01L29/45H01L29/47H01L29/78
CPCH01L29/66068H01L21/0485H01L21/0495H01L29/7806H01L29/45H01L29/47
Inventor 温正欣张振中和巍巍汪之涵郑泽东
Owner SHENZHEN BASIC SEMICON LTD