Copper-clad ceramic substrate and preparation method thereof
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A technology of copper-clad ceramic substrate and ceramic layer, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc. The effect of thermal shock reliability improvement
Inactive Publication Date: 2021-01-01
江苏富乐华半导体科技股份有限公司
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However, the above technologies are limited in improving the reliability of the thermal cycle of the copper-clad ceramic substrate, so it is urgent to find a new method that can be combined with other technologies to effectively improve the reliability of the thermal cycle of the copper-clad ceramic substrate.
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Embodiment 1
[0030] Embodiment 1 Copper-clad ceramic substrate
[0031] according to figure 1 , the structure of the copper-clad ceramic substrate 100 is as follows: before sintering, it includes a ceramic layer 1 located in the middle, a solder layer 2 located on the upper and lower sides of the ceramic layer, a stress buffer layer 3 attached to the solder layer, and a stress buffer layer attached to the stress buffer layer. Metal copper layer 4.
[0032] Wherein, the ceramic layer 1 is a silicon nitride ceramic plate or an aluminum nitride ceramic plate. The solder layer 2 includes two forms, one is solder arranged on both sides of the ceramic plate by screen printing, and the other is an active metal solder sheet attached to both sides of the ceramic plate. The stress buffer layer 3 is preferably copper foil, with the rough side 31 facing the solder layer and the smooth side facing the metal copper layer. After vacuum sintering, a microporous area ( figure 2 ).
[0035] 1) Use acetone or alcohol to degrease the copper foil as the stress buffer layer and the copper sheet as the metal copper layer, and then perform anti-oxidation cleaning;
[0036] 2) Double-sided screen-printed solder layer on the ceramic layer or double-sided pasting of active metal pads;
[0037] 3) Copper foil is pasted on the solder layer or the active metal solder sheet, and the copper foil is covered with a metal copper layer, the rough side of the copper foil faces the solder layer, and the smooth side faces the metal copper layer;
[0038] 4) Place indenters on the top and bottom of the parts to be sintered, such as glass, ceramics, graphite blocks or corundum bricks, etc.;
[0039] 5) Carry out vacuum active brazing sintering according to the AMB process and provide the required conditions for molecular diffusion welding. The temperature is controlled at 700°C-940°C, the vacuum degree is less than...
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Abstract
The invention relates to a copper-clad ceramic substrate. Before sintering, the copper-clad ceramic substrate comprises a ceramic layer located in the middle, solder layers located on the upper surface and the lower surface of the ceramic layer, stress buffer layers attached to the solder layers and metal copper layers attached to the stress buffer layers. The stress buffer layer is a metal sheet,the rough surface faces the solder layer, and the smooth surface faces the metal copper layer. The preparation method comprises the following steps: 1) removing oil stains from a copper foil servingas a stress buffer layer and a copper sheet serving as a metal copper layer, and performing anti-oxidation cleaning; 2) carrying out double-sided silk-screen printing of a solder layer or double-sidedpasting of an active metal soldering lug on the ceramic layer; 3) attaching copper foil to the solder layer or the active metal soldering lug, and covering the copper foil with a metal copper layer;4) placing pressure heads above and below the to-be-sintered part; and 5) performing vacuum active brazing sintering according to an AMB process, providing conditions required by molecular diffusion welding, controlling the temperature to be 700 DEG C and 940 DEG C, the vacuum degree to be less than 0.01, and the sintering time to be 60min-540min, and forming a micropore region after the copper foil and the metal copper layer are subjected to molecular diffusion welding.
Description
technical field [0001] The invention belongs to the technical field of semiconductor substrate preparation, and relates to a preparation technology for improving the reliability of a copper-clad ceramic substrate in cold and hot cycles, in particular to a copper-clad ceramic substrate including a stress buffer layer and a preparation method thereof. Background technique [0002] Miniaturized high-voltage and high-power modules are one of the important development directions of semiconductor devices. In the design of semiconductor devices, as the size decreases, the power density of chips increases sharply, which puts forward new requirements for the reliability of module heat dissipation packaging. Ceramic copper clad substrate is the most excellent packaging material for power modules in the field of power electronics. Due to the high thermal conductivity of ceramic copper clad substrate, it can quickly dissipate the heat of the chip to the outside world, and is generally us...
Claims
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Application Information
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