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IPD device based on DBC copper-clad plate and manufacturing process of IPD device

A technology of copper clad laminates and devices, which is applied in the direction of circuit substrate materials, electrical components, circuit thermal components, etc., can solve the problems of increasing process difficulty and time, increasing process complexity, increasing device insertion loss, etc.

Pending Publication Date: 2021-01-05
四川芯纳川科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thicker metal layer increases the complexity of the process, and the thicker third layer of metal increases the difficulty and time of the process to a large extent
The thinner connection wire layer on the bottom layer increases the insertion loss of the overall device

Method used

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  • IPD device based on DBC copper-clad plate and manufacturing process of IPD device
  • IPD device based on DBC copper-clad plate and manufacturing process of IPD device
  • IPD device based on DBC copper-clad plate and manufacturing process of IPD device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] This embodiment shows an IPD device based on a DBC substrate, such as figure 1 As shown, including the substrate layer 1 and the through-substrate holes passing through it, the front and back sides of the substrate layer 1 each have a bonding layer, which are respectively the front bonding layer 21 and the back bonding layer 22, The back side of the back bonding layer 22 is covered with the back layer metal 9, and the front bonding layer 21 is sequentially formed with the bottom metal layer 3 and the upper layer metal layer 61, between the bottom metal layer 3 and the upper metal layer 61. A high dielectric constant dielectric layer 5 is deposited, and a passivation layer 7 is covered on the upper metal layer 61 .

[0082] Wherein, the substrate layer 1 is a ceramic layer with high thermal conductivity, such as aluminum nitride, zirconia, alumina and other ceramic glass materials with high thermal conductivity, high electrical insulation, high mechanical strength and lo...

Embodiment 2

[0091] This embodiment shows a high-pass filter manufactured by the IPD device process based on the DBC substrate, including the device circuit, structure, manufacturing process and use effect.

[0092] The equivalent circuit diagram of a high-pass filter is shown in figure 2As shown, the left and right ends are input and output ports, the signal enters the connection capacitor C1 from the left port, the other end of C1 is connected to the inductor L1 and C2, the other end of L1 is grounded, the other end of C2 is connected to the inductor L2 and capacitor C3, and the inductor L2 The other end of the capacitor C3 is connected to the ground, the other end of the capacitor C3 is connected to the inductor L3 and the capacitor C4, the other end of the inductor L3 is connected to the ground, the other end of the capacitor C4 is connected to the output port, and the signal is output from the right port. This circuit achieves the effect of high-pass filtering.

[0093] The top view...

Embodiment 3

[0120] This embodiment shows a bandpass filter manufactured by IPD device process based on DBC substrate, including device circuit, structure, manufacturing process and application effect.

[0121] The equivalent circuit diagram of the bandpass filter of the present embodiment is as Figure 5 As shown, the left and right ends are input and output ports, and the signal enters from the left port to connect capacitor C1 and inductor L1. Connect capacitor C3, and the other end of C3 is grounded. Inductor L3 is connected to the other end of capacitor C2, and connected to L4, inductor L5 and capacitor C4, the other end of inductor L4 is connected to capacitor C5, the other end of capacitor C5 is grounded, and the other end of inductor L5 is connected to capacitor C4, and connected to the output port. This circuit achieves the effect of bandpass filtering.

[0122] The top view structural diagram of the bandpass filter of this embodiment is as follows Figure 6 As shown, among them...

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Abstract

The invention relates to an IPD device based on a DBC copper-clad plate and a manufacturing process of the IPD device and belongs to the technical field of IPD devices. The IPD device comprises a substrate layer and a substrate through hole penetrating through the substrate layer, wherein the front face and the back face of the substrate layer are each provided with a bonding bonding layer, the bonding bonding layers are the front face bonding bonding layer and the back face bonding layer, the back face of the back face bonding layer is covered with back layer metal, and bottommost layer metaland upper layer metal are sequentially formed on the front face bonding layer. According to the IPD device obtained through the manufacturing process, the good heat dissipation performance is achieved, loss of the device can be effectively reduced, and manufacturing cost is reduced.

Description

technical field [0001] The invention relates to an IPD device based on a DBC copper clad laminate and a manufacturing process thereof, belonging to the technical field of IPD devices. Background technique [0002] IPD devices are a new type of passive microwave devices, and their products include capacitors, inductors, filters, power dividers, and baluns. It has the advantages of good miniaturization, high integration, and compatibility with semiconductor CMOS / MEMS processes, and can provide multi-functional and miniaturized integration for miniaturized circuits / microsystems such as wearable devices, Internet of Things, artificial intelligence, human-computer interaction, etc. The application scenario of the circuit as the underlying facility provides high-quality radio frequency technology solutions to meet the increasing demand for high-quality communication. [0003] At present, the common passive device processes mainly include PCB, LTCC, SAW, and BAW. Compared with pas...

Claims

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Application Information

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IPC IPC(8): H05K1/02H05K1/05H05K1/16H05K3/06H05K3/42
CPCH05K1/0201H05K1/053H05K1/16H05K1/162H05K1/165H05K3/06H05K3/42H05K2201/06
Inventor 杨晓东李小珍樊庆扬邢孟道代传相刘永红邢孟江
Owner 四川芯纳川科技有限公司
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