A silver-doped molybdenum disulfide sulfide film and its preparation method and application
A technology of molybdenum disulfide and thin film, which is applied in the field of molybdenum disulfide doped silver thin film and its preparation, vulcanized thin film, which can solve the problems of hindering interlayer slippage of molybdenum disulfide coating, reduced lubricating performance, poor moisture resistance, etc. , to meet the requirements of lubrication stability and long service life, good friction and wear performance, good resistance to heat and humidity
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[0034] As another aspect of the technical solution of the present invention, it relates to the preparation method of the aforementioned molybdenum disulfide-doped silver sulfide thin film, which includes: using magnetron sputtering technology, sequentially depositing a titanium transition layer, titanium / silver Molybdenum disulfide / molybdenum disulfide multi-layer gradient transition layer and molybdenum disulfide / silver doped sulfide layer, and then the obtained composite film is subjected to high temperature sulfide treatment to obtain the molybdenum disulfide doped silver sulfide film.
[0035] In some embodiments, the preparation method includes: the first step is to use unbalanced magnetron sputtering technology to sequentially deposit a titanium transition layer, a titanium / silver / molybdenum disulfide multilayer gradient transition layer and a molybdenum disulfide / molybdenum disulfide / silver-doped sulfide layer to obtain molybdenum disulfide-doped silver sulfide film. T...
Embodiment 1
[0073] In this embodiment, the base material is 1Cr18Ni9, TC4 or single crystal silicon wafer. Using magnetron sputtering technology to prepare molybdenum disulfide-doped silver sulfide film on the surface of the substrate, mainly includes the following steps:
[0074] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for ultrasonic cleaning for 15 minutes, blow dry with nitrogen, put it in absolute ethanol solution for ultrasonic cleaning for 15 minutes, and blow dry with nitrogen.
[0075] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 5×10 -4 torr, and then sputter to clean the target for 30 minutes, and the substrate temperature is 100-150°C.
[0076] Preparation and deposition of molybdenum disulfide mixed with silver sulfide film, the cavity is filled with high-purity argon, and Ti target (purity 99.99at.%) MoS is used 2 Target material (...
Embodiment 2
[0089] In this embodiment, the base material is 1Cr18Ni9, TC4 or single crystal silicon wafer. Using magnetron sputtering technology to prepare molybdenum disulfide-doped silver sulfide film on the surface of the substrate, mainly includes the following steps:
[0090] Perform mechanical polishing on the surface of the substrate, put the substrate material into an acetone solution for ultrasonic cleaning for 15 minutes, blow dry with nitrogen, put it in absolute ethanol solution for ultrasonic cleaning for 15 minutes, and blow dry with nitrogen.
[0091] Put the cleaned substrate into the magnetron sputtering chamber, and evacuate until the vacuum degree is lower than 5×10 -4 torr, and then sputter to clean the target for 30 minutes, and the substrate temperature is 100-150°C.
[0092] Preparation and deposition of molybdenum disulfide mixed with silver sulfide film, the cavity is filled with high-purity argon, and Ti target (purity 99.99at.%) MoS is used 2 Target material (...
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Abstract
Description
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Application Information
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