A kind of perovskite single crystal flake and method and application for promoting its growth

A technology of perovskite and perovskite precursors, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of complex steps, poor crystal structure integrity and consistency, and poor controllability. To achieve a wide range of practical effects

Active Publication Date: 2022-07-12
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of perovskite single crystal flake and method and application of promoting its growth; , poor controllability, poor integrity and consistency of the grown crystal structure

Method used

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  • A kind of perovskite single crystal flake and method and application for promoting its growth
  • A kind of perovskite single crystal flake and method and application for promoting its growth
  • A kind of perovskite single crystal flake and method and application for promoting its growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Step 1, prepare 1.5mol / L MAPbBr at room temperature 3 , the solvent is DMF;

[0048] Step 2, prepare 4.2mol / L MAPbBr at 60°C 3 , the solvent is DMSO.

[0049] Step 3. Mix the solution prepared in step 1 and the solution prepared in step 2 in a volume ratio of 1:4, seal the mixed solution and place it on a hot table, heat and stir at 60°C, and obtain the precursor after mixing evenly. solution.

[0050] Step 4, Precursor Solution Filtration:

[0051] Filter the solution with a filter element with a pore size of 8 μm, and pipette 3 mL to 6 mL of the solution into a 30 mL polytetrafluoroethylene vial.

[0052] Step 5, fix the glass bottle containing the precursor solution and the teflon bottle in the oil bath, start heating from 60 °C, increase the temperature at a rate of 3 °C / h, and keep the temperature at 100 °C for observation. It was kept at 100°C for 8h.

[0053] Step 6, cleaning of single crystal:

[0054] The grown MAPbBr 3 The perovskite single crystal is ...

Embodiment 2

[0057] Step 1, prepare 1.5mol / L MAPbI at room temperature 3 , the solvent is DMF;

[0058] Step 2, prepare 4.2mol / L MAPbI at 60°C 3 , the solvent is DMSO.

[0059] Step 3. Mix the solution prepared in step 1 and the solution prepared in step 2 in a volume ratio of 1:4, seal the mixed solution and place it on a hot table, heat and stir at 60°C, and obtain the precursor after mixing evenly. solution.

[0060] Step 4, Precursor Solution Filtration:

[0061] Filter the solution with a filter element with a pore size of 8 μm, and pipette 3 mL to 6 mL of the solution into a 30 mL polytetrafluoroethylene vial.

[0062] Step 5, fix the glass bottle containing the precursor solution and the teflon bottle in the oil bath, start heating from 60 °C, increase the temperature at a rate of 3 °C / h, and keep the temperature at 110 °C for observation. It was kept at 110°C for 6h.

[0063] Step 6, cleaning of single crystal:

[0064] The grown MAPbI 3 The perovskite single crystal is tak...

Embodiment 3

[0068] Step 1, prepare 1.5mol / L CsPbBr at room temperature 3 , the solvent is DMF;

[0069] Step 2, prepare 4.2mol / L of CsPbBr at 60°C 3 , the solvent is DMSO.

[0070] Step 3. Mix the solution prepared in step 1 and the solution prepared in step 2 in a volume ratio of 1:4, seal the mixed solution and place it on a hot table, heat and stir at 60°C, and obtain the precursor after mixing evenly. solution.

[0071] Step 4, Precursor Solution Filtration:

[0072] Filter the solution with a filter element with a pore size of 8 μm, and pipette 3 mL to 6 mL of the solution into a 30 mL polytetrafluoroethylene vial.

[0073] Step 5, fix the glass bottle containing the precursor solution and the teflon bottle in the oil bath, start heating from 60 °C, increase the temperature at a rate of 3 °C / h, and keep the temperature at 120 °C for observation. 120°C for 5h.

[0074] Step 6, cleaning of single crystal:

[0075] The grown CsPbBr 3 The perovskite single crystal is taken out fr...

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Abstract

The invention discloses a perovskite single crystal sheet and a method and application for promoting its growth. The method uses polytetrafluoroethylene as a crystallizing vessel for the perovskite single crystal sheet. Compared with the existing glass vessel, the polytetrafluoroethylene Ethylene is a hydrophobic vessel for the perovskite precursor solution. For the crystallization process of perovskite thin films, the surface tension controls inverse temperature crystallization to grow perovskite single crystal thin films. Since the chemical potential of the substance is positively related to its pressure, high pressure will lead to higher chemical potential energy, so hydrophobicity In the container, the chemical potential on the surface of the solution is lower than the chemical potential inside the solution. The greater the surface tension of the perovskite precursor solution, the faster the grain growth, the greater the upward force given to the perovskite crystal, the greater the upward force, the easier it is for the wafer to grow upward, and the lateral growth of the wafer. The effect is also better.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a perovskite single crystal flake and a method and application for promoting the growth thereof. Background technique [0002] Lead-halide perovskite materials have excellent optoelectronic properties and are widely used in solar cells, LEDs, lasers, ray detectors and other devices. At present, the efficiency of perovskite solar cells is as high as 23.3%, and the quantum efficiency of perovskite light-emitting quantum dots is close to its theoretical limit, reaching 22%, showing its good application prospects. However, the thickness of the perovskite bulk phase single crystal prepared by the current conventional method is too large, which will lead to an increase in the probability of carrier recombination, which is not suitable for the direct preparation of solar cells and other devices. The study found that when the thickness of the perovskite...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/10C30B29/12H01L51/42
CPCC30B7/10C30B29/12H10K30/00Y02E10/549
Inventor 刘生忠杨周贾珊珊肖英锐胡明昕刘渝城张云霞步诺莫莉红
Owner SHAANXI NORMAL UNIV
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