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Composite heat sink material with thermal expansion coefficients in gradient distribution and preparation method thereof

A technology of thermal expansion coefficient and heat sink material, which is applied in the direction of electrical components, circuits, electric solid devices, etc., can solve the problems of reducing connection interface power semiconductor devices, thermal expansion coefficient mismatch, etc., to improve reliability and quality stability, eliminate Interface thermal resistance, effect of relieving thermal stress

Pending Publication Date: 2021-01-15
成都本征新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the thermal stress problem caused by the thermal expansion coefficient mismatch between the current heat sink material and the radiator, simplify the packaging structure and packaging process, reduce the connection interface, and improve the heat dissipation capacity of the power semiconductor device, thereby improving reliability and reliability. Quality stability

Method used

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  • Composite heat sink material with thermal expansion coefficients in gradient distribution and preparation method thereof
  • Composite heat sink material with thermal expansion coefficients in gradient distribution and preparation method thereof
  • Composite heat sink material with thermal expansion coefficients in gradient distribution and preparation method thereof

Examples

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Effect test

Embodiment 1

[0024] use figure 1 The process flow shown produces a composite heat sink material with a gradient distribution of thermal expansion coefficients. The specific process is as follows: the first step is to prepare diamond preforms with different volume contents: a layer of tungsten with a thickness of 180 nm is coated on the surface of the diamond with a particle size of 100 μm as an interface layer, and then the polyvinyl alcohol aqueous solution and different quantities of coated diamond are respectively After uniform mixing, the first green compact and the second green compact with a volume content of 60% and 32% diamond were obtained, and the dimensions were 20×20×3 and 20×20×2, respectively. The first and second diamond preforms with different volume fractions and certain strengths are obtained by drying and degreasing and strengthening respectively; the second step, infiltration: according to the second diamond preform, the first diamond preform is at the bottom and the fi...

Embodiment 2

[0027] use figure 1 The process flow shown produces a composite heat sink material with a gradient distribution of thermal expansion coefficients. The specific process is as follows: the first step is to prepare diamond preforms with different volume contents: 1000nm-thick silicon and 430nm-thick titanium are respectively plated on the surface of diamond with a particle size of 300μm and 500μm as an interface layer, and then paraffin and different amounts of The coated diamonds were uniformly mixed and then pressed to form the first and second green compacts with a diamond volume content of 80% and 40%, respectively, and the sizes were Ф50×2 and Ф50×3. Degreasing and strengthening are carried out by drying respectively to obtain a first diamond preform and a second diamond preform with different volume fractions and a certain strength; the second step, infiltration: according to the second diamond preform at the bottom and the first diamond preform at the bottom The above seq...

Embodiment 3

[0030] use figure 1 The process flow shown produces a composite heat sink material with a gradient distribution of thermal expansion coefficients. The specific process is as follows: the first step is to prepare diamond preforms with different volume contents: 200nm thick boron and 510nm thick molybdenum are respectively plated on the diamond surface with a particle size of 10μm and 50μm as the interface layer, and then the phenolic resin aqueous solution is mixed with different A number of coated diamonds were uniformly mixed and then pressed into shape to obtain the first and second green compacts with a diamond volume content of 40% and 10%, respectively, with dimensions of 8×4×1 and 8×4×1.5. Drying at a temperature of 230°C for degreasing and strengthening, respectively, to obtain a first diamond preform and a second diamond preform with different volume fractions and a certain strength; the second step, infiltration: according to the second diamond preform in the followin...

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Abstract

The invention discloses a composite heat sink material with thermal expansion coefficients in gradient distribution and a preparation method thereof, and belongs to the technical field of electronic packaging materials. By adopting a method for preparing diamond preforms with different volume content, and carrying out infiltrating, cooling and demolding, the composite heat sink material with the thermal expansion coefficients in gradient distribution, which consists of three parts, namely a first diamond / metal composite layer, a second diamond / metal composite layer and a metal heat dissipationlayer with different diamond volume content is prepared, and the three parts are connected through metal and are integrally formed. According to the composite heat sink material and the preparation method thereof, gradient distribution of the thermal expansion coefficients in the heat dissipation path direction is achieved, the packaging structure and process are simplified, the problem of thermal stress between a heat sink and a radiator is avoided, therefore, the heat dissipation capacity, reliability and quality stability of a power semiconductor device are improved.

Description

technical field [0001] The invention relates to a composite heat sink material with gradient distribution of thermal expansion coefficient and a preparation method thereof, in particular to a diamond / metal composite material with gradient distribution of thermal expansion coefficient, belonging to the technical field of electronic packaging materials. Background technique [0002] Power semiconductor devices play an increasingly important role in national production and life, and are widely used in electric power, rail transit, laser, display, lighting, electric vehicles and other fields. Especially with the rise of the third-generation semiconductor materials, the heat dissipation requirements of the devices are becoming more and more demanding. The existing power semiconductor packaging structure generally includes several parts such as chips, leads, packaging substrates, heat sinks, and heat sinks. Except that the leads are connected to the circuit layers of the chip and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22D23/04B22F3/02B22F3/10C22C1/05C22C1/10C22C26/00H01L23/367H01L23/373
CPCB22D23/04B22F3/02B22F3/1021C22C1/05C22C26/00H01L23/367H01L23/3732H01L23/3735H01L23/3736
Inventor 史长明
Owner 成都本征新材料技术有限公司
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