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Inverted pyramid auxiliary texturing additive and its application

An inverted pyramid, additive technology, applied in sustainable manufacturing/processing, final product manufacturing, post-processing details, etc., can solve problems such as severe cutting line marks and affecting copper catalytic ability.

Active Publication Date: 2022-08-05
SONGSHAN LAKE MATERIALS LAB +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the mortar slicing, the diamond wire slicing has serious cutting line marks, and the amorphous silicon layer on the surface of the slicing silicon slice will seriously affect the catalytic ability of copper, making the final inverted pyramid structure easy to merge, and the inverted pyramid structure merged The place is often densely populated with spikes, and it is a serious leakage center after being prepared into a battery.

Method used

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  • Inverted pyramid auxiliary texturing additive and its application
  • Inverted pyramid auxiliary texturing additive and its application
  • Inverted pyramid auxiliary texturing additive and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Prepare an inverted pyramid auxiliary texturing additive, and configure 1% of silver ions, 6% of sodium citrate, 8% of ethylenediaminetetraacetic acid, and 10% of fluosilicic acid to 75% of In deionized water, the inverted pyramid auxiliary texturing additive is prepared after mixing evenly; the silver ion is silver nitrate;

[0024] (2) adding the inverted pyramid auxiliary texturing additive into the acidic texturing liquid, and after mixing evenly, the inverted pyramid texturing liquid is obtained; the volume ratio of the inverted pyramid auxiliary texturing additive to the acidic texturing liquid is 0.006: 1000. The acidic texturing solution contains copper ions with a concentration of 0.1 mmol / L, fluoride ions with a concentration of 10 mol / L and an oxidant with a concentration of 0.1 mol / L, and can oxidize silicon in the silicon wafer to silicon oxide and copper ions. Oxidized to copper ions.

[0025] (3) Texturing the surface of the silicon wafer with the i...

Embodiment 2

[0027] (1) Prepare an inverted pyramid auxiliary texturing additive, and configure 2% of silver ions, 10% of sodium citrate, 1% of ethylenediaminetetraacetic acid, and 6% of fluosilicic acid to 81% of In deionized water, the inverted pyramid auxiliary texturing additive is prepared after mixing evenly; the silver ion is silver fluoride;

[0028] (2) adding the inverted pyramid auxiliary texturing additive into the acidic texturing liquid, and after mixing, the inverted pyramid texturing liquid is obtained; the volume ratio of the inverted pyramid auxiliary texturing additive and the acidic texturing liquid is 0.01: 1000. The acidic texturing solution contains copper ions with a concentration of 100.0 mmol / L, fluoride ions with a concentration of 5 mol / L and an oxidant with a concentration of 3 mol / L, and can oxidize silicon in the silicon wafer to silicon oxide and oxidize copper. for copper ions.

[0029] (3) Texturing the surface of the silicon wafer with the inverted pyra...

Embodiment 3

[0031] (1) Prepare an inverted pyramid auxiliary texturing additive, and configure 3% of silver ions, 5% of sodium citrate, 10% of ethylenediaminetetraacetic acid, and 3% of fluosilicic acid to 79% by mass. In deionized water, the inverted pyramid auxiliary texturing additive is prepared after mixing evenly; the silver ion is silver sulfate;

[0032] (2) adding the inverted pyramid auxiliary texturing additive into the acidic texturing liquid, and after mixing evenly, the inverted pyramid texturing liquid is obtained; the volume ratio of the inverted pyramid auxiliary texturing additive to the acidic texturing liquid is 0.06: 1000. The acidic texturing solution contains copper ions with a concentration of 200.0 mmol / L, fluoride ions with a concentration of 0.5 mol / L and an oxidant with a concentration of 5 mol / L, and can oxidize silicon in the silicon wafer to silicon oxide and copper ions. Oxidized to copper ions.

[0033] (3) Texturing the surface of the silicon wafer with...

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Abstract

The invention discloses an inverted pyramid auxiliary texturing additive and its application, wherein the main components of the inverted pyramid auxiliary texturing additive are silver ions, sodium citrate, fluorosilicic acid, ethylenediaminetetraacetic acid, and the balance is water. The invention provides an inverted pyramid texturing liquid, which contains an acidic texturing liquid and the above-mentioned inverted pyramid auxiliary texturing additive. The present invention provides a method for texturing a silicon wafer, which utilizes the above-mentioned inverted pyramid texturing liquid to texture the surface of a silicon wafer to obtain an inverted pyramid textured surface structure. Adding the inverted pyramid auxiliary texturing additive of the present invention to the texturing liquid can speed up the reaction, increase the raising point, effectively eliminate the influence of diamond wire cutting line marks on the inverted pyramid texturing, and obtain a more uniform and dense inverted pyramid textured surface. structure, thereby reducing the reflectivity and improving the battery efficiency, which is conducive to wide popularization and application.

Description

technical field [0001] The invention belongs to the technical field of texturing additives, in particular to an inverted pyramid auxiliary texturing additive and its application. Background technique [0002] Cost reduction and efficiency increase have always been the eternal theme of the photovoltaic industry. In order to improve the performance and efficiency of crystalline silicon solar cells, it is necessary to make texture on the surface of crystalline silicon wafer. The reflectivity of the battery, and the advancing direction of the incident light in the silicon is changed, the optical path is prolonged, and the absorption rate of the infrared light by the silicon wafer is increased. [0003] Among them, the inverted pyramid suede structure has become a new favorite in the photovoltaic industry due to its excellent light trapping ability and good passivation effect. At present, the main method for preparing the inverted pyramid textured structure is the metal copper ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10H01L31/0236H01L31/18
CPCC30B33/10H01L31/02167Y02P70/50
Inventor 吴俊桃刘尧平陈伟赵燕陈全胜唐旱波王燕杜小龙
Owner SONGSHAN LAKE MATERIALS LAB
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