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Inverted pyramid auxiliary texturing additive and application thereof

An inverted pyramid, additive technology, applied in sustainable manufacturing/processing, final product manufacturing, post-processing details, etc., can solve problems such as severe cutting line marks, affecting copper catalytic ability, etc., to reduce reflectivity, improve cell efficiency, Reduce the effect of treatments

Active Publication Date: 2021-01-22
SONGSHAN LAKE MATERIALS LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the mortar slicing, the diamond wire slicing has serious cutting line marks, and the amorphous silicon layer on the surface of the slicing silicon slice will seriously affect the catalytic ability of copper, making the final inverted pyramid structure easy to merge, and the inverted pyramid structure merged The place is often densely populated with spikes, and it is a serious leakage center after being prepared into a battery.

Method used

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  • Inverted pyramid auxiliary texturing additive and application thereof
  • Inverted pyramid auxiliary texturing additive and application thereof
  • Inverted pyramid auxiliary texturing additive and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] (1) Prepare inverted pyramid auxiliary texturing additive, configure 1% silver ion, 6% sodium citrate, 8% ethylenediaminetetraacetic acid, 10% fluosilicic acid to 75% of mass percent In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver nitrate;

[0024] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.006: 1000. Wherein said acidic texturizing liquid contains the copper ion that concentration is 0.1mmol / L, the fluorine ion that concentration is 10mol / L and the oxidizing agent that concentration is 0.1mol / L, can oxidize the silicon in silicon wafer to silicon oxide and copper Oxidized to copper ions.

[0025] (3) Texturing the surface of the silicon wafer with ...

Embodiment 2

[0027] (1) Prepare inverted pyramid auxiliary texturing additive, configure 2% silver ion, 10% sodium citrate, 1% ethylenediaminetetraacetic acid, 6% fluosilicic acid to 81% of mass percent In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver fluoride;

[0028] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.01: 1000. Wherein said acidic texturing liquid contains the copper ion that concentration is 100.0mmol / L, the fluorine ion that concentration is 5mol / L and the oxidizing agent that concentration is 3mol / L, can oxidize the silicon in the silicon wafer to silicon oxide and copper oxidize for copper ions.

[0029] (3) Texturing the surface of the silicon wafer with...

Embodiment 3

[0031] (1) prepare inverted pyramid auxiliary texturing additive, configure 3% silver ion, 5% sodium citrate, 10% ethylenediaminetetraacetic acid, 3% fluosilicic acid of mass percentage composition to 79% In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver sulfate;

[0032] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.06: 1000. Wherein said acidic texturizing liquid contains the copper ion that concentration is 200.0mmol / L, the fluorine ion that concentration is 0.5mol / L and the oxidizing agent that concentration is 5mol / L, can oxidize the silicon in the silicon wafer into silicon oxide and copper Oxidized to copper ions.

[0033] (3) Texturing the surface of th...

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Abstract

The invention discloses an inverted pyramid auxiliary texturing additive and application thereof. The inverted pyramid auxiliary texturing additive comprises the following main components: silver ions, sodium citrate, fluosilicic acid, ethylenediamine tetraacetic acid and the balance of water. The inverted pyramid texturing liquid provided by the invention contains an acidic texturing liquid and the inverted pyramid auxiliary texturing additive. According to the silicon wafer texturing method provided by the invention, the inverted pyramid texturing liquid is used for texturing the surface ofthe silicon wafer to obtain an inverted pyramid textured structure; and by adding the inverted pyramid auxiliary texturing additive into texturing liquid, reaction can be accelerated, raising points are increased, the influence of diamond wire cutting line marks on inverted pyramid texturing is effectively eliminated, and a more uniform and dense inverted pyramid textured structure is obtained, sothat the reflectivity is reduced, the battery efficiency is improved, and the inverted pyramid auxiliary texturing additive is beneficial to wide popularization and application.

Description

technical field [0001] The invention belongs to the technical field of texturing additives, in particular to an inverted pyramid auxiliary texturing additive and its application. Background technique [0002] Cost reduction and efficiency increase have always been the eternal theme of the photovoltaic industry. In order to improve the performance and efficiency of crystalline silicon solar cells, it is necessary to make a textured surface on the surface of the crystalline silicon wafer. The effective textured structure can make the incident sunlight reflect and refract multiple times on the surface of the silicon wafer, which not only significantly reduces the The reflectivity of the battery, and changing the direction of incident light in silicon, prolongs the optical path, thereby increasing the absorption rate of silicon wafers for infrared light. [0003] Among them, the inverted pyramid suede structure has become the new darling of the photovoltaic industry due to its ...

Claims

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Application Information

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IPC IPC(8): C30B33/10H01L31/0236H01L31/18
CPCC30B33/10H01L31/02167Y02P70/50
Inventor 吴俊桃刘尧平陈伟赵燕陈全胜唐旱波王燕杜小龙
Owner SONGSHAN LAKE MATERIALS LAB
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