Inverted pyramid auxiliary texturing additive and application thereof
An inverted pyramid, additive technology, applied in sustainable manufacturing/processing, final product manufacturing, post-processing details, etc., can solve problems such as severe cutting line marks, affecting copper catalytic ability, etc., to reduce reflectivity, improve cell efficiency, Reduce the effect of treatments
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0023] (1) Prepare inverted pyramid auxiliary texturing additive, configure 1% silver ion, 6% sodium citrate, 8% ethylenediaminetetraacetic acid, 10% fluosilicic acid to 75% of mass percent In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver nitrate;
[0024] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.006: 1000. Wherein said acidic texturizing liquid contains the copper ion that concentration is 0.1mmol / L, the fluorine ion that concentration is 10mol / L and the oxidizing agent that concentration is 0.1mol / L, can oxidize the silicon in silicon wafer to silicon oxide and copper Oxidized to copper ions.
[0025] (3) Texturing the surface of the silicon wafer with ...
Embodiment 2
[0027] (1) Prepare inverted pyramid auxiliary texturing additive, configure 2% silver ion, 10% sodium citrate, 1% ethylenediaminetetraacetic acid, 6% fluosilicic acid to 81% of mass percent In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver fluoride;
[0028] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.01: 1000. Wherein said acidic texturing liquid contains the copper ion that concentration is 100.0mmol / L, the fluorine ion that concentration is 5mol / L and the oxidizing agent that concentration is 3mol / L, can oxidize the silicon in the silicon wafer to silicon oxide and copper oxidize for copper ions.
[0029] (3) Texturing the surface of the silicon wafer with...
Embodiment 3
[0031] (1) prepare inverted pyramid auxiliary texturing additive, configure 3% silver ion, 5% sodium citrate, 10% ethylenediaminetetraacetic acid, 3% fluosilicic acid of mass percentage composition to 79% In deionized water, after being mixed uniformly, an inverted pyramid auxiliary texturing additive is obtained; the silver ion is silver sulfate;
[0032] (2) described inverted pyramid auxiliary texturing additive is put in the acidic texturing liquid, after being mixed uniformly, inverted pyramid texturing liquid is made; The volume ratio of described inverted pyramid auxiliary texturing additive and acidic texturing liquid is 0.06: 1000. Wherein said acidic texturizing liquid contains the copper ion that concentration is 200.0mmol / L, the fluorine ion that concentration is 0.5mol / L and the oxidizing agent that concentration is 5mol / L, can oxidize the silicon in the silicon wafer into silicon oxide and copper Oxidized to copper ions.
[0033] (3) Texturing the surface of th...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



