A kind of copper-containing lamination etchant, etching method and application thereof

Abstract

The present invention relates to the field of chemical treatment of metal surfaces, more specifically, the present invention relates to a copper-containing lamination etchant, an etching method and its application. The etchant includes a main agent, and in parts by weight, the main agent includes 1 ‑20 parts of oxidizing agent, 0.01‑1 part of fluoride ion source, 0.01‑5 part of inorganic acid, 1‑15 part of organic acid, 1‑15 part of organic base, 0.01‑5 part of hydrogen peroxide stabilizer, 0.01‑1 part of metal corrosion inhibitor , make up 100 parts of solvent. The etchant provided by the invention has low cost, no phosphorus, is environmentally friendly, and has low waste treatment cost; it can effectively suppress cracks at the interface of different metals; it has high copper ion loading capacity; it has excellent etching characteristics, unilateral CD‑Loss<0.9um, the etching angle (taper) is 35‑45°; it can solve the problem of chamfering, effectively avoid bubbles in the insulating layer, and avoid the step of pre-dissolving copper.

Description

technical field [0001] The invention relates to the field of metal surface chemical treatment, more specifically, the invention relates to a copper-containing lamination etchant, an etching method and an application thereof. Background technique [0002] With the development of semiconductor, flat-panel display and micro-electromechanical processes toward large size and high-speed response, the traditionally used aluminum metal wires can no longer meet the requirements of electron mobility, so metal materials with lower resistance values ​​(such as copper metal) are used. As a wire, it has the advantage of improving the speed of current conduction. However, although copper metal has the advantage of low resistance, it also has the disadvantages of being easily oxidized and unable to perform dry etching. Furthermore, the application of copper metal wires faces difficulties in use due to poor bonding between copper metal and the glass substrate or silicon substrate. If other...

AI Technical Summary

Problems solved by technology

However, there are still some problems to be overcome, for example: (1) cracks are easily generated between different metal film layers due to electrochemical reactions, which will lead to disconnection; (2) there are chamfers, which will cause subsequent process climbing and disconnection, which will affect the yield ; (3) When constructing the insulating layer, air bubbles are likely to be generated in the insulating layer under high temperature conditions; (4) CD-LOSS is relatively large, which cannot meet the needs of high-precision products

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