Check patentability & draft patents in minutes with Patsnap Eureka AI!

Manufacturing method of ingot casting monocrystalline or polycrystalline amorphous silicon heterojunction solar cell

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve problems such as low open circuit voltage of solar cells, uncompetitive products, and low conversion efficiency, so as to reduce lattice defects, increase short-circuit current and fill factor, and improve electrical conductivity sexual effect

Active Publication Date: 2021-02-09
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can solve the problems of low open-circuit voltage of solar cells, low conversion efficiency, and uncompetitive products in the prior art.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of ingot casting monocrystalline or polycrystalline amorphous silicon heterojunction solar cell
  • Manufacturing method of ingot casting monocrystalline or polycrystalline amorphous silicon heterojunction solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The content of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments of the description:

[0041] In order to make the objects, technical solutions and advantages of the present invention clearer, the following in conjunction with specific examples, and with reference to the appended figure 1 , 2 , the present invention will be further described.

[0042] The invention provides a method for preparing an amorphous silicon heterojunction solar cell with cast monocrystalline silicon as a substrate, comprising the following steps:

[0043] S1. Perform wet chemical cleaning of the cast monocrystalline (or polycrystalline) silicon wafer. The cleaning solution can be alkaline solution or acid solution. Preferably, the cleaning solution uses an acid solution such as HF, and the mass percentage of HF acid is 1%- 8%, the mass percentage of deionized water is 92%-99%, the treatment time of silicon wafers in HF acid ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a manufacturing method of an amorphous silicon heterojunction solar cell taking ingot single crystal or polycrystal as a substrate. The manufacturing method comprises the following steps: 1) performing single-side polishing texturing on an ingot single crystal (or polycrystal) silicon wafer; 2) forming a first passivation layer on the texturing surface; 3) forming an intrinsic polycrystalline silicon layer on the first passivation layer; 4) performing phosphorus diffusion treatment on two sides of the silicon wafer; 5) removing the diffusion layer; 6) forming a secondpassivation layer on the surface from which the diffusion layer is removed; 7) depositing transparent conductive film layers on two sides of the silicon wafer; and 8) forming metal electrodes on the front and back surfaces of the silicon wafer. According to the invention, the thin oxide layer is superposed with the polycrystalline phosphorus-doped layer to replace the traditional amorphous siliconintrinsic layer and phosphorus-doped layer, and the polycrystalline silicon film is used to replace the amorphous silicon film, so the light absorption coefficient of the material is reduced, the conductivity of the back electric field is improved, and the short-circuit current and the filling factor of the cell are improved.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for manufacturing an amorphous silicon heterojunction solar cell with an ingot single crystal or polycrystal as a substrate. Background technique [0002] In recent years, as an inexhaustible clean energy source, solar energy has become more and more popular in various countries. The research and development and production of solar cells are mainly carried out around the direction of cost reduction and efficiency increase. Improving the conversion efficiency of solar cells is the foundation of the development of solar energy business. Reducing the production cost of solar cells is the foundation of expanding the solar energy business and the prerequisite for mass production. condition. [0003] Silicon wafers are the carrier used in the production of silicon-based solar cells, and are generally divided into monocrystalline silicon wafers, quasi-monocrystalline sil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/074H01L31/0224H01L31/20
CPCH01L31/074H01L31/022425H01L31/202Y02E10/50
Inventor 许志
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More