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A method for making ingot monocrystalline or polycrystalline amorphous silicon heterojunction solar cells

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve the problems of uncompetitive products, low open-circuit voltage of solar cells, low conversion efficiency, etc., to improve short-circuit current and fill factor, reduce lattice defects, and improve electrical conductivity sexual effect

Active Publication Date: 2022-07-15
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can solve the problems of low open-circuit voltage of solar cells, low conversion efficiency, and uncompetitive products in the prior art.

Method used

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  • A method for making ingot monocrystalline or polycrystalline amorphous silicon heterojunction solar cells
  • A method for making ingot monocrystalline or polycrystalline amorphous silicon heterojunction solar cells

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Embodiment Construction

[0040] The content of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments of the description:

[0041] In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following specific embodiments are combined with reference to the accompanying drawings. figure 1 , 2 , to further illustrate the present invention.

[0042] The present invention provides a method for preparing an amorphous silicon heterojunction solar cell using cast monocrystalline silicon as a substrate, comprising the following steps:

[0043] S1. Wet chemical cleaning is performed on the cast single crystal (or polycrystalline) silicon wafer. The cleaning solution can be an alkaline solution or an acid solution. Preferably, the cleaning solution is an acid solution such as HF, and the HF acid mass percentage is 1%- 8%, the mass percentage of deionized water is 92%-99%, the processing ti...

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Abstract

The invention relates to a method for manufacturing an amorphous silicon heterojunction solar cell with an ingot monocrystalline or polycrystalline as the substrate, which comprises the following steps: 1) making the ingot monocrystalline (or polycrystalline) silicon wafer Single-side polishing and texturing; 2) forming a first passivation layer on the texturing surface; 3) forming an intrinsic polysilicon layer on the first passivation layer; 4) performing phosphorus diffusion treatment on both sides of the silicon wafer; 5) removing the diffusion layer 6) A second passivation layer is formed on the side after removing the diffusion layer; 7) A transparent conductive film is deposited on both sides of the silicon wafer; 8) Metal electrodes are formed on the front and back sides of the silicon wafer. In the invention, the traditional amorphous silicon intrinsic layer and the phosphorus-doped layer are replaced by a thin oxide layer superimposed with a polycrystalline phosphorous-doped layer, and the amorphous silicon film is replaced by a polycrystalline silicon film, so as to reduce the light absorption coefficient of the material and improve the conductivity of the back electric field at the same time. It is beneficial to improve the short-circuit current and fill factor of the battery.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for manufacturing an amorphous silicon heterojunction solar cell sheet using an ingot single crystal or polycrystal as a substrate. Background technique [0002] In recent years, solar energy, as an inexhaustible clean energy, is more and more favored by all countries. The research and development and production of solar cells mainly focus on the direction of cost reduction and efficiency improvement. Improving the conversion efficiency of solar cells is the foundation of the development of the solar energy business. Reducing the production cost of solar cells is the basis for the expansion of the solar energy business and the prerequisite for large-scale production. condition. [0003] Silicon wafer is the carrier used in the production of silicon-based solar cells, and is generally divided into monocrystalline silicon wafers, monocrystalline silicon wafers and p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/074H01L31/0224H01L31/20
CPCH01L31/074H01L31/022425H01L31/202Y02E10/50
Inventor 许志
Owner XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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