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Film formation material for lithography, composition for film formation for lithography, underlayer film for lithography, and pattern formation method

A technology of lithography and compounds, which is applied in the processing of photosensitive materials, photosensitive materials for photomechanical equipment, coatings, etc., can solve problems such as difficulty in obtaining, resolution problems, and collapse of resist patterns

Inactive Publication Date: 2021-02-12
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the miniaturization of the resist pattern progresses, there will be a problem of resolution and a problem of collapse of the resist pattern after development, so the thinning of the resist is expected.
However, it is difficult to obtain a sufficient film thickness of the resist pattern in substrate processing only by thinning the resist

Method used

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  • Film formation material for lithography, composition for film formation for lithography, underlayer film for lithography, and pattern formation method
  • Film formation material for lithography, composition for film formation for lithography, underlayer film for lithography, and pattern formation method
  • Film formation material for lithography, composition for film formation for lithography, underlayer film for lithography, and pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0371] Separately, as the biscitraconimide compound, 5 parts by mass of BAPP citraconimide obtained in Synthesis Example 1 was used, and as the bismaleimide compound, bismaleimide represented by the following formula was used: 5 parts by mass of imide (BMI-80; manufactured by K.I Chemical Industry Co., Ltd.) was used as a film-forming material for photolithography.

[0372]

[0373] As a result of the thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, when the solubility in PGMEA was evaluated, it was 20% by mass or more (evaluation S), and it was evaluated that the obtained film-forming material for lithography had sufficient solubility.

[0374] A film-forming composition for lithography was prepared by adding 90 parts by mass of PGMEA as a solvent to 10 parts by mass of the aforementioned film-forming material for lithography, and stirring ...

Embodiment 1-2 and 1-3

[0376] Except having changed the quantity of BAPP citraconimide and BMI-80 respectively as shown in Table 1, it carried out similarly to Example 1, and prepared the composition for film formation for photolithography.

Embodiment 2

[0378] Separately, as the biscitraconimide compound, 5 parts by mass of APB-N citraconimide obtained in Synthesis Example 2-1 was used, and as the bismaleimide compound, Synthesis Example 2- 5 parts by mass of the APB-N maleimide obtained in 2 was prepared as a film-forming material for photolithography.

[0379] As a result of the thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, when the solubility in PGMEA was evaluated, it was 10 mass % or more and less than 20 mass % (evaluation A), and it was evaluated that the obtained film-forming material for lithography had sufficient solubility.

[0380] A film-forming composition for photolithography was prepared in the same manner as in Example 1 above.

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Abstract

The present invention addresses the problem of providing a film formation material and the like for lithography, which are useful for forming a photoresist underlayer film to which a wet process is applicable, and which has excellent heat resistance, etching resistance, ability to be embedded in a multilevel substrate, and film flatness. The problem can be solved by the following film formation material for lithography. This film formation material for lithography contains: a compound having a group represented formula (0A) (in formula (0A), RA represents a hydrogen atom or an alkyl group having 1-4 carbon atoms, and RB represents an alkyl group having 1-4 carbon atoms); and a compound having a group represented by formula (0B).

Description

technical field [0001] The present invention relates to a film-forming material for lithography, a film-forming composition for lithography containing the material, an underlayer film for lithography formed using the composition, and a pattern forming method (such as a resist patterning method) using the composition or circuit pattern method). Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using photoresist materials. In recent years, along with higher integration and higher speed of LSIs, further miniaturization based on pattern rules has been sought. Furthermore, in photolithography using light exposure, which is currently used as a general technique, the limit of the intrinsic resolution derived from the wavelength of the light source is getting closer. [0003] The light source for lithography used in resist pattern formation has been shortened from KrF excimer laser (248 nm) to ArF excimer l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G73/06G03F7/004G03F7/039G03F7/40H01L21/027H01L21/3065
CPCH01L21/0332G03F7/094G03F7/027G03F7/0388G03F7/16C08G73/123C08L79/085C08L2203/16C08G73/127C08G73/126C08F222/404C09D135/02C08L79/02C08L63/04C08L79/04G03F7/004G03F7/11G03F7/0387G03F7/039G03F7/20G03F7/26C08G73/06H01L21/027C07D207/452C08G73/1003C08G73/128C09D179/08H01L21/0274H01L21/0335H01L21/0337H01L21/0338
Inventor 堀内淳矢上野雅义山田弘一牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC
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