Low-temperature welding process of high-pressure-resistant silicon carbide micro-reaction assembly

A high-pressure silicon carbide, low-temperature welding technology, applied in the field of engineering ceramics, can solve the problems of low yield, large deformation, difficult to control the depth of the reactor tank, etc., to achieve the effect of reducing requirements, low welding temperature and reducing welding cost

Inactive Publication Date: 2021-02-19
NANTONG SANZER PRECISION CERAMICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the temperature and pressure resistance can meet the requirements of use, during the welding process, the silicon carbide reaction plate is in a high-temperature softening state, and the thickness shrinkage is more than 0.5mm, the deformation is large, and the groove depth of the reactor is difficult to control.
The welding yield is low, therefore, it is urgent to find a method for low-temperature welding of silicon carbide micro-reaction components

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A low-temperature welding process for high-pressure silicon carbide micro-reaction components, comprising the following steps:

[0025] Step 1, configure the mixed solution: dissolve ethyl orthosilicate, dimethyldiethoxysilane, and trimethyl borate in ethanol according to a certain proportion, and ball mill evenly. Wherein the content of ethyl orthosilicate is 30 parts by weight, the content of dimethyldiethoxysilane is 30 parts by weight, and the content of trimethyl borate is 40 parts by weight.

[0026] Step 2. Configure the mixed slurry: add silicon carbide powder into the mixed solution, and ball mill it evenly. The silicon carbide powder added is 20 parts by weight, and the particle diameter of the silicon carbide powder is 50-200nm, preferably 50nm in the present embodiment.

[0027] Step 3, coating: coating the ball-milled slurry on the welding surface of the silicon carbide micro-reaction plate. The thickness of the slurry is 0.5mm.

[0028] Step 4, welding:...

Embodiment 2

[0031] Dissolve 90 parts by weight of tetraethyl orthosilicate, 90 parts of dimethyldiethoxysilane and 10 parts of trimethyl borate in ethanol, the amount of ethanol added is the weight sum of the weight of organic matter, ball milling uniform. Add 76 parts of silicon carbide powder with a particle size of 50 nm into the mixed solution, and ball mill to make it uniform. The ball-milled slurry is coated on the welding surface of the silicon carbide micro-reaction plate, with a thickness of 0.5 mm. The silicon carbide micro-reaction plate coated with the slurry is welded in a hot-press furnace. The welding temperature is 1900°C, the pressure is 10MPa, and the holding time is 0.5 hour. When the temperature of the hot pressing furnace is cooled to within 500°C, it is reheated to 1600°C, the holding time is 1 hour, and then the temperature is lowered for the second time to obtain a silicon carbide micro-reaction component with a welding thickness.

[0032] The silicon carbide mi...

Embodiment 3

[0034] Dissolve 10 parts by weight of tetraethyl orthosilicate, 10 parts of dimethyldiethoxysilane and 90 parts of trimethyl borate in ethanol, the amount of ethanol added is the weight sum of the weight of organic matter, ball mill uniform. Add 88 parts of silicon carbide powder with a particle size of 50 nm into the mixed solution, and ball mill to make it uniform. The ball-milled slurry is coated on the welding surface of the silicon carbide micro-reaction plate, and the thickness is 2mm. The silicon carbide micro-reaction plates coated with the slurry are welded in a hot-press furnace. The welding temperature is 1800°C, the pressure is 10MPa, and the holding time is 1 hour. When the temperature of the hot pressing furnace is cooled to within 500°C, it is reheated to 1500°C, the holding time is 2 hours, and then the temperature is lowered for the second time to obtain a silicon carbide micro-reaction component with a welding thickness.

[0035] The silicon carbide micro-...

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PUM

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Abstract

The invention discloses a high-pressure-resistant silicon carbide micro-reaction assembly and a low-temperature welding process. The process is characterized in that tetraethyl orthosilicate, dimethyldiethoxysilane and trimethyl borate are dissolved in ethanol, silicon carbide powder is added into a mixed solution to be coated on the welding surface of a silicon carbide micro-reaction plate, low-temperature welding is carried out in a hot-pressing furnace after slurry coating, cooling is performed to 500 DEG C or below, reheating is performed to 1600 DEG C, heat preservation is performed for 1hour, and secondary cooling is performed to obtain the silicon carbide micro-reaction assembly with the welding thickness. According to the invention, the welding temperature is low, the requirementfor a high-temperature welding furnace is lowered, and the welding cost is reduced; the silicon carbide ceramic is low in softening degree, deformation is easy to control, the depth is easy to control, the welding yield of the silicon carbide micro-reaction assembly is increased, and the welding cost is reduced; the silicon carbide micro-reaction assembly obtained by welding through the process ishigh in bonding strength, and the withstand voltage can reach 60 BAR or above; and the binding phase is silicon carbide ceramic which is resistant to strong acid and strong alkali corrosion and can be applied to various harsh reaction conditions.

Description

technical field [0001] The invention relates to a low-temperature connection process for high-pressure silicon carbide micro-reaction components, in particular to a method capable of connecting silicon carbide ceramics at low temperature, which belongs to the field of engineering ceramics. Background technique [0002] As an important chemical process intensification equipment, the microreactor can make the chemical reaction proceed in the micron-scale space, fully improve the heat transfer and mass transfer efficiency, and then greatly improve the reaction conversion rate and selectivity, reduce the volume of the reactor, and improve the reaction process. The integration and safety of the chemical industry can achieve the production goal of energy saving and consumption reduction. [0003] In the field of fine chemical industry, many reactions have very strict requirements on temperature, and many media often have strong acid or strong alkali characteristics, and high press...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
CPCC04B37/003
Inventor 闫永杰
Owner NANTONG SANZER PRECISION CERAMICS CO LTD
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