Low-temperature welding process of high-pressure-resistant silicon carbide micro-reaction assembly
A high-pressure silicon carbide, low-temperature welding technology, applied in the field of engineering ceramics, can solve the problems of low yield, large deformation, difficult to control the depth of the reactor tank, etc., to achieve the effect of reducing requirements, low welding temperature and reducing welding cost
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Embodiment 1
[0024] A low-temperature welding process for high-pressure silicon carbide micro-reaction components, comprising the following steps:
[0025] Step 1, configure the mixed solution: dissolve ethyl orthosilicate, dimethyldiethoxysilane, and trimethyl borate in ethanol according to a certain proportion, and ball mill evenly. Wherein the content of ethyl orthosilicate is 30 parts by weight, the content of dimethyldiethoxysilane is 30 parts by weight, and the content of trimethyl borate is 40 parts by weight.
[0026] Step 2. Configure the mixed slurry: add silicon carbide powder into the mixed solution, and ball mill it evenly. The silicon carbide powder added is 20 parts by weight, and the particle diameter of the silicon carbide powder is 50-200nm, preferably 50nm in the present embodiment.
[0027] Step 3, coating: coating the ball-milled slurry on the welding surface of the silicon carbide micro-reaction plate. The thickness of the slurry is 0.5mm.
[0028] Step 4, welding:...
Embodiment 2
[0031] Dissolve 90 parts by weight of tetraethyl orthosilicate, 90 parts of dimethyldiethoxysilane and 10 parts of trimethyl borate in ethanol, the amount of ethanol added is the weight sum of the weight of organic matter, ball milling uniform. Add 76 parts of silicon carbide powder with a particle size of 50 nm into the mixed solution, and ball mill to make it uniform. The ball-milled slurry is coated on the welding surface of the silicon carbide micro-reaction plate, with a thickness of 0.5 mm. The silicon carbide micro-reaction plate coated with the slurry is welded in a hot-press furnace. The welding temperature is 1900°C, the pressure is 10MPa, and the holding time is 0.5 hour. When the temperature of the hot pressing furnace is cooled to within 500°C, it is reheated to 1600°C, the holding time is 1 hour, and then the temperature is lowered for the second time to obtain a silicon carbide micro-reaction component with a welding thickness.
[0032] The silicon carbide mi...
Embodiment 3
[0034] Dissolve 10 parts by weight of tetraethyl orthosilicate, 10 parts of dimethyldiethoxysilane and 90 parts of trimethyl borate in ethanol, the amount of ethanol added is the weight sum of the weight of organic matter, ball mill uniform. Add 88 parts of silicon carbide powder with a particle size of 50 nm into the mixed solution, and ball mill to make it uniform. The ball-milled slurry is coated on the welding surface of the silicon carbide micro-reaction plate, and the thickness is 2mm. The silicon carbide micro-reaction plates coated with the slurry are welded in a hot-press furnace. The welding temperature is 1800°C, the pressure is 10MPa, and the holding time is 1 hour. When the temperature of the hot pressing furnace is cooled to within 500°C, it is reheated to 1500°C, the holding time is 2 hours, and then the temperature is lowered for the second time to obtain a silicon carbide micro-reaction component with a welding thickness.
[0035] The silicon carbide micro-...
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