Strong electron-withdrawing element doped rare earth orthosilicate scintillating material and preparation method and application thereof

A technology of orthosilicate and electronic elements, applied in the preparation/processing of rare earth metal compounds, luminescent materials, scintillation components, etc., can solve the problem of shortening the emission duration, shortening the duration of the main amplitude component of the scintillation response, and adding doping Problems with high ion content

Active Publication Date: 2021-02-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although patent 1 (Chinese Publication No. CN108139492A) discloses to A 2 SiO 5 A-site doping of Ni, Zr, Nb, Mo, Ru, Rh, Ag, Ta, W, In, Sn, Sb, Tl, Pb, Bi ions in silicate scintillator material to realize non-radia

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strong electron-withdrawing element doped rare earth orthosilicate scintillating material and preparation method and application thereof
  • Strong electron-withdrawing element doped rare earth orthosilicate scintillating material and preparation method and application thereof
  • Strong electron-withdrawing element doped rare earth orthosilicate scintillating material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Embodiment 1 (growth W-doped single crystal)

[0055] Single crystals were grown by the pulling method. Molar ratio WO 3 :CeO 2 :SiO2 2 :Lu 2 o 3 :Y 2 o 3 =2y:0.002:1:0.899-y:0.1 Ingredients (y=0.001, 0.003, 0.005, 0.01), fully mixed, the mixture is pressed into a block under 2500MPa cold isostatic pressure, put into an iridium crucible, through induction Heating and fully melting, and slowly growing a single crystal with a preset size from the melt after inoculation of the seed crystal to obtain Lu 1.798-2y Y 0.2 Ce 0.002 W 2y SiO 5 single crystal.

Embodiment 2

[0056] Embodiment 2 (preparation of W-doped polycrystalline powder)

[0057] According to the ingredients in Example 1, mix thoroughly and evenly, put the powder mixture into a corundum crucible, put it in a muffle furnace, and calcinate at 1600 ° C for 10 hours to undergo a solid phase reaction to obtain Lu 1.798-2y Y0.2 Ce 0.002 W 2y SiO 5 polycrystalline powder.

Embodiment 3

[0058] Embodiment 3 (preparation of W-doped ceramics)

[0059] Non-transparent: according to the ingredients in Example 1, mix thoroughly and evenly, press the mixture into a block under 30MPa cold isostatic pressure, put it into a corundum crucible, put it in a muffle furnace, and sinter at 1600 ° C for 10 hours to undergo a solid-state reaction to obtain Lu 1.798- 2y Y 0.2 Ce 0.002 W 2y SiO 5 or Lu 1.798-2y+2y / z Y 0.2 Ce 0.002 W 2y Si (1-2y / z) o 5 Opaque ceramic. Transparent: According to the ingredients in Example 1, mix well and evenly, press the mixture into a block under 5000MPa cold isostatic pressure, and undergo a solid-phase reaction in a vacuum hot-press furnace to get rid of air bubbles and voids as much as possible to obtain Lu 1.798-2y Y 0.2 Ce 0.002 W 2y SiO 5 Transparent ceramic.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a strong electron-withdrawing element doped rare earth orthosilicate scintillating material and a preparation method and application thereof. The chemical formula of the strong electron-withdrawing element doped rare earth orthosilicate scintillating material is RE2 (1-x-y + delta/2) Ce2xM2y-delta Si (1-delta) M delta O5, wherein RE is a rare earth ion, and x is more than0 and less than or equal to 0.05; M is a strong electron-withdrawing doping element, and y is greater than 0 and less than or equal to 0.015; 0 < = delta < = 10<-4>; M is selected from at least one oftungsten W, lead Pb, molybdenum Mo, tellurium Te, antimony Sb, bismuth Bi, mercury Hg, silver Ag, nickel Ni, indium In, zinc Zn, thallium T1, niobium Nb, titanium Ti, tantalum Ta, tin Sn, cadmium Cd,technetium Tc, zirconium Zr, rhenium Re and gallium Ga.

Description

technical field [0001] The invention relates to a rare-earth orthosilicate scintillation material doped with strong electron-attracting elements, a preparation method and application thereof, and belongs to the technical field of scintillation materials. Background technique [0002] Inorganic scintillation materials are crystalline energy converters that can convert the energy of high-energy photons (X / γ-rays) or particles (protons, neutrons, etc.) into easily detectable ultraviolet / visible photons. Detectors made of inorganic scintillation crystals are widely used in fields such as high-energy physics, nuclear physics, space physics, nuclear medicine diagnosis (XCT, PET), geological exploration, and safety inspection. With the rapid development of nuclear detection and related technologies, higher requirements are placed on the performance of scintillation crystals. Traditional scintillation crystals such as NaI(Tl), BGO, and PWO can no longer meet the application requirem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01F17/32C01F17/10C09K11/77G01T1/00G01T1/161G01T3/06
CPCC01F17/32C01F17/10C09K11/7776C09K11/7774G01T1/161G01T1/003G01T3/06C01P2002/54C01P2006/60C04B35/16C30B29/22G01T1/2023C04B2235/3224C04B2235/3225C04B2235/3229C04B2235/3258C04B2235/3298C04B2235/3256C04B2235/32C04B2235/3294C04B2235/3296C04B2235/3284C04B2235/3291C04B2235/3279C04B2235/3286C04B2235/3251C04B2235/3232C04B2235/3293C04B2235/3244C04B2235/3262C04B2235/3201C04B2235/3203C04B2235/3206C04B2235/3208C04B2235/3213C04B2235/3281C04B2235/9646C04B2235/442C04B35/62675C04B35/645C04B2235/604C04B2235/9653C30B29/34C30B11/00C01B33/20C30B28/02
Inventor 丁栋舟赵书文杨帆施俊杰袁晨王林伟徐鎔涛陈露
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap