Novel MEMS high-Q-value non-solenoid integrated inductor and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FUDAN UNIV
- Publication Date
- 2021-02-23
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Abstract
Description
technical field
[0001] The invention relates to integrated passive components in the field of microelectronic technology, in particular to a novel MEMS high-Q value non-solenoid integrated inductor with a peak quality factor Q reaching 40. Background technique
[0002] In the past 30 years, with the development of electronic communication technology and the increasing functions of handheld devices such as smart consumer electronics, inductors, as basic and necessary electronic components, are widely used in integrated circuits, such as matching networks, filters, low-noise amplifiers , Transceivers, Voltage Controlled Oscillators, etc. Due to the constraints of packaging cost, size and performance conditions, traditional discrete inductors no longer meet the urgent needs of small size and low power consumption of integrated circuits. The demand for inductors with low energy consumption, small size, low noise, and high frequency bands continues Increase. The quality factor ...